Experimental observation of resonant modes in GaInAsP microsquare resonators

GaInAsP-InP microsquare resonators with InP pedestals are fabricated by two-step chemical etching, and obvious mode peaks are observed in the photoluminescence spectra of the resonators. The mode Q-factors about 500 are obtained for a microsquare resonator with the side length of 7 mu m. The experimental mode interval is in agreement with that predicted by the light ray method based on the cavity length, instead of that of the whispering-gallery (WG)-like modes, which has mode interval twice of that determined by the cavity length. The finite-difference time-domain simulation shows that a little asymmetry may greatly reduce the difference of the Q-factors between the WG-like modes and the other modes.

Temperature dependence of absorption edge in MOCVD grown GaN

We have studied the temperature dependence of absorption edge of GaN thin films grown on sapphire substrate by metal-organic chemical vapor deposition using optical absorption spectroscopy. A shift in absorption edge of about 55 meV has been observed in temperature range 273-343 K. We have proposed a theoretical model to find the energy gap from absorption coefficient using alpha = alpha(max) + (alpha(min) - alpha(max))/[1 + exp 2(E - E-g + KT)/KT]. Temperature dependence of band gap has also been studied by finding an appropriate theoretical fit to our data using E-g(T) = E-g(273 K) - (8.8 x 10(-4)T(2))/(483 + T) + 0.088 (Varshni empirical formula) and E-g(T) = E-g(273 K)-0.231447/[exp(362/T)-1] + 0.082 relations. It has been found that data can be fitted accurately after adding a factor similar to 0.08 in above equations. Debye temperature (483 K) and Einstein temperature (362 K) in the respective equations are found mutually in good agreement.

Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.

一种XACML规则冲突及冗余分析方法

基于属性的声明式策略语言XACML表达能力丰富,满足开放式环境下资源访问管理的复杂安全需求,但其自身缺乏对规则冲突检测、规则冗余分析的支持.文中利用规则状态思想描述分析了属性层次操作关联带来的多种冲突类型,在资源语义树策略索引基础上利用状态相关性给出规则冲突检测算法;利用状态覆盖思想分析造成规则冗余的原因,给出在不同规则评估合并算法下的冗余判定定理.仿真实验首先分析了冲突检测算法的运行效率;然后针对多种策略判定系统,验证了基于语义树的策略索引和冗余规则处理可以显著提高判定性能.

Non-collinear CPOPA seeded by an Yb3+-doped self-starting passive mode-locked fiber laser

Using a home-made seed at 1053 nm from a Yb3+-doped passively mode-locked fiber laser of 1.5 nJ/pulse, 362 ps pulse duration with a repetition rate of 3.842 MHz, a compact, low cost, stable and excellent beam quality non-collinear chirped pulse optical parametric amplifier omitting the bulky pulse stretcher has been demonstrated. A gain higher than 4.0 x 10(6), single pulse energy exceeding 6 mJ with fluctuations less than 2% rms, 14 nm amplified signal spectrum and recompressed pulse duration of 525 fs are achieved. This provides a novel and simple amplification scheme. (c) 2007 Optical Society of America.

土丘陵沟壑区植被恢复过程中的土壤抗蚀与细沟侵蚀演变

对黄土丘陵沟壑区安塞纸坊沟和县南沟、延安燕沟3个流域不同恢复年限的植物群落的土壤抗蚀性和侵蚀程度进行了研究。对12个土壤抗蚀性指标进行主成分分析表明,土壤抗蚀性(主成分综合指数)强弱为灌木群落阶段>多年生草本和蒿类群落阶段>一二年生草本群落阶段,与一二年生草本群落阶段相比,灌木群落阶段与多年生草本和蒿类群落阶段的土壤抗蚀性分别增加了362.29%～673.33%和574.71%～930.00%;野外调查结果分析表明,随着植被的恢复演替,土壤侵蚀量呈现明显的下降趋势,灌木群落阶段的土壤侵蚀量仅为演替初期的1.42%～5.59%;通过回归分析,土壤侵蚀量和水稳性团聚类因子,以及有机质含量之间分别存在极显著与显著相关关系,鉴于土壤分析的易获性,可选择>0.5mm水稳性团聚体与有机质含量作为反映土壤侵蚀程度的指标。

灌溉方式对黄瓜结果期根系特征与产量的影响

采用小区试验研究了不同灌溉方式对津春4号黄瓜根系特性与产量的影响。结果表明,不同灌水方式之间黄瓜根系的特征值差异达到显著水平,前期交替沟灌结果期常规沟灌处理单株根条数、根长、根体积、根冠比均高于其余五种处理,根系伤流量为19.86 mg/min,根系活力高达0.55 mg/(g.h)。灌水方式对黄瓜单果重的影响不大,前期交替沟灌结果期常规沟灌处理的单株产量显著高于常规沟灌。因此,前期交替沟灌结果期常规沟灌有利于黄瓜根系的发育与产量的提高。

Ln-Ba-Cu-Ag-O多元复合物制备、结构及电学性质的研究

本文合成了LnBa_2Cu_(3(1-x))Ag_xO_(7-δ) (x = 0.1,0.3,0.5, Cu = Y,Dy,Ho,Er,Gd) YBa_(2(1-x))Cu_3Ag_xO_(7-δ) (x = 0.05,0.1,0.2,0.3,0.4,0.5,0.6); Y_(1-x)Ag_xBa_2Cu_3O_(7-δ) (x = 0.05,0.1,0.2,0.3,0.5); YBa_2Cu_3O_(7-δ)Ag_x (x = 0.2～2.0), CuBaCu_3O_(7-δ)Ag_x (x = 0.5,1.0, Cu = Dy,Ho,Er)及与之对照的空白样品等一系列超导稀土复合氧化物，对它们的结构、电学性质、Ag的存在状态及Ag的加入方式进行了研究。对这方面的研究目前仍无全面系统的报道。对CuBa_2Cu_(3(1-x))Ag_xO_(7-δ)的研究表明Ag并未取代Cu的格位，少量的Ag加入（x<0.1）就使结构发生破坏，当x>0.1时样品即失去超导性，对光加Ag的YBa_(2(1-x))Cu_3Ag_(2x)Cu_3O_(7-δ)的研究表明，当x<0.6时仍为90k左右的超导体，Ag没有取代Ba的格位，Ag的加入使杂相比例加大，Ag的加入改善了样品晶粒间的弱连接状况，使电流密度明显提高，Ag以单质及复合物形式存在于样品之中。后加Ag方式对结构、电性、无影响没有提高Jc。对光加Ag的Y_(1-x)Ag_xBa_2Cu_3O_(7-δ)的研究表明，x<0.5时样品仍为90k左右超导体，Ag的加入使杂相比例减少，Ag部分以单质及与13a、Cu形成对改善弱连接状有益的复合场的形式存在，部分进入晶格可能占据了Y的格位使C轴变长。Ag的加入改善了样品晶粒间的弱连接状况，从而使Jc大幅度提高，当x=0.1时Jc = 362 A/cm~2，后加Ag的方式对结构、电性、无影响没有提高Jc。对YBa_2Cu_3O_(7-δ)Ag_x的研究表明，加Ag的样品的Jc比不加Ag样品的Jc明显加大，随着Ag量的加大Jc增加，当x=1时Jc最大，当Ag量大于2.0mol时将有大量Ag析出，Ag的加入不影响超导正交结构，部分Ag进入了晶格可能占据了Y的格位，C轴增长，部分以单质及复合物的形式存在，Ag的加入不影响样品的临界温度，使样品电阻降低，电镜分析表明，Ag的加入改善了样品晶粒间的连接状况。CuBaCu_3O_(7-δ)Ag_x与上面体子有相同的性质，在加入1mol Ag得到，Jc：DyBaCu_3O_(7-δ)Ag_(1.0) 113A/cm~2；HoBaCu_3O_(7-δ)Ag_(1.0) 164 A/cm~2 ErBaCu_3O_(7-δ)Ag_(1.0) 177A/cm~2的样品。样品加Ag后密度明显加大，最大可达6.321克/cm~3，硬度也加大具有良好的机械性能。针对在YBaCu_3O_(7-δ)样品中添加Ag，可以做为一种大幅度提高Jc的途径的特点，进行了各种工艺探索，到目前为止，合成出了临界电流密度为570 A/cm~2的样品。

锌胁迫下两种鹿角珊瑚虫黄藻荧光值的变化

本文以SeaWinds散射计为例,针对圆锥扫描散射计星下点附近区域容易产生风向模

珊瑚骨骼生长研究评述

珊瑚骨骼生长有年、月、日周期,能够当作古生物钟来记录地质历史。块状珊瑚