147 resultados para 346.096
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一 结构因子相角的代数解法晶体结构研究中的相角问题,一直是晶体学工作者努力探求的基本问题。几十年来,关于相角问题的研究已经取得了巨大的进展,直接法的成熟和普遍应用就是这个进展的显著标志。在直接法相角问题研究中,历来存在两种基本方法,即概率法和代数法。当前直接法的迅猛发展,则主要以概率法为基础,其应用的基本公式即是来自∑关系中的∑_2关系和由此发展出的TANGENT公式,并结合一系列的基本理论和辅助公式,从而使直接法的发展一直呈方兴未艾之势。与此形成鲜明对照的是,相角问题的代数法研究则有日趋下降之势,尤其近十年来则显著落后了。作者从近年来的∑关系研究中,看到要解决相角问题,代数法仍然有其潜在的应作价值,并认为在概率法可以得到应用的许多方面,在代数法那里都应找到对应的类似内容,而代数法在研究和应用中所表现出的不同于概率法的那些方面也正是在相角问题研究中最令人感兴趣的问题,这就是我们进行代数法研究的目的和出发点。(一)1.5和2.5阶代数式的提出及对±2~(II)型相角的估算。(二)一般类型相角的估算(三)结构相角通用代数式的推导。代数法不仅可用于结构半不变量O,π型相角的计算,而且可用于非结构半不变量的种种类型相角的估算,其中包括型和一般类型相角,而且其应用效果完全可以和概率法相比拟,在机时利用上前者有一定优势。通用代数式的获得将为代数法的普遍应用和计算机计算创造了方便条件。二稀土杂多酸根配合物K_8H_5[La(SiWMo_(10)O_(39))(SiW_3Mo_8O_(39))]·nH_2O的晶体结构采用低温技术,在-90 ℃的干燥氮气保护下,收集晶体衍射数据,以直接法解出结构。a = 17.485(5), b = 27.096(6), c = 21.642(5)A, β = 107.79(2)°, z = 4。最后的R值为0.097。中心离子La(III)同两个杂多酸根提供的8 个氧配合。而其中的W、Mo同氧的配位情况基本相同,者是与氧六配位,形成变形配位八面体。
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酪氨酸酶是黑色素合成当中的关键酶。人酪氨酸酶基因包括5个外显子,在染色体11q14-q21位置上占据了约50kb长的区域。对人类眼皮肤型白化病(Oculocutaneous albinism, OCA)的许多研究表明,该病主要是由于酪氨酸酶基因的突变引起的。昆明动物研究所白化猴研究小组数十年来一直从事白化猕猴的培育和研究工作,目前饲养着2只白化猕猴和它们的后代,这提供了我们研究猕猴白化分子机制目的条件。为了弄清猕猴白化病的分子机制,我们根据人酪氨酸酶基因序列设计了5对PCR引物扩增相应的5个外显子,序列分析表明,白化猕猴珍珍酪氨酸酶基因第184个密码子第2位置(外显子1的核苷酸位置551)处发生一个C→A的无义突变,使编码丝氨酸(Ser)的密码子变成了一个终止密码,这样后面1038bp的核苷酸片段(346个氨基酸残基)被截断,导致酪氨酸酶翻译不完全,迄今为止,并没有发现合成黑色素的第二条生化途径,因此由于该酶不能行使正常功能而将导致黑色素不能正常表达。这可能是导致该例猕猴白化病的原因。为了解酪氨酸酶基因序列变异的规律及其与功能的关系,探讨该基因作为系统发育研究中遗传标记的有效性,我们测定了黑猩猩(Pan troglodytes)、倭黑猩猩(Pan paniscus)、大猩猩(Gorilla gorilla)、猩猩(Pongo pygmaeus)、长臂猿(Hylobates lar)、食蟹猴(Macaca fascicularis)、狒狒(Simia cynocephalus)、猕猴(Macaca mulatta)、熊猴(Macaca assamensis)、菲氏叶猴(Presbytis p. crepusculus)、白臀叶猴(Pygathrix nemaeus)、滇金丝猴(Rhinopithecus r. bieti)和蛛猴(Ateles paniscus)13个灵长类中代表种的酪氨酸酶基因全部5个外显子的DNA序列。基于这些序列,用简约法构建了分子系统树。结果表明,人猿超科与旧大陆猴各自形成一单系群。人猿超科各物种和旧大陆猴有明显分化,人与大猩猩的关系比人与黑猩猩的关系近。酪氨酸酶基因在解决灵长类系统发育关系上是一个较有用的基因。为了进一步了解中国猕猴(Macaca mulatta)的亚种分化和不同地理群体间的基因流状况,我们测定了来自中云南、广西、福建、海南、浙江、河南、湖南、湖北、安徽、四川、贵州和越南猕猴共96只个体和一只外群食蟹猴的线粒体DNA控制区576bp的DNA序列,基于这些序列,运用距离法对中国恒河猴的分子进行和遗传多样性进行了分析,我们的研究结果显示,云南、四川和湖南猕猴群体与其它群体存在显著分析,海南群体内遗传多样性最低、四川、广西、浙江、福建和越南群体内遗传多样性较丰富。中国猕猴的分化可能存在三条路线。中国猕猴的遗传多样性较丰富。
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综述了南海的海南岛和南海诸岛各珊瑚礁区现代沉积底栖有孔虫研究成果,区
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The wide stripe (ISjum) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated. The characteristics of the growth ratios,thickness enhancement factors .bandgap modulation,and composition modulation vary with the growth conditions such as mask width,growth pressure. Flux of III-group precursors are outlined and the rational mechanism behind SAG MOVPE is explained. In addition,the surface spike of the SAG InGaAsP is shown and the course of it is given by the variation of V /III .
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To achieve high optical power as well as low vertical divergence angle, a new kind of optimized large optical cavity (LOC) structure is applied to a ridge waveguide 980nm InGaAs/GaAs/AlGaAs multi-quantum well laser. The optical power density in the waveguide is successfully reduced. The maximum output power is more than 400mW with a slope efficiency of 0.89W/A and the far-field vertical divergence angle is lowered to 23°.
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Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.
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The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.