Selective Area Growth InGaAsP by MOVPE
Data(s) |
2003
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Resumo |
The wide stripe (ISjum) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated. The characteristics of the growth ratios,thickness enhancement factors .bandgap modulation,and composition modulation vary with the growth conditions such as mask width,growth pressure. Flux of III-group precursors are outlined and the rational mechanism behind SAG MOVPE is explained. In addition,the surface spike of the SAG InGaAsP is shown and the course of it is given by the variation of V /III . |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Qiu Weibin;Dong Jie;Wang Wei;Zhou Fan.Selective Area Growth InGaAsP by MOVPE,半导体学报,2003,24(4):342-346 |
Palavras-Chave | #半导体材料 |
Tipo |
期刊论文 |