Tellurium enhanced non-resonant third-order optical nonlinearity in a germano-silicate optical fiber

碲掺杂的高非线性石英光纤

All-optical switching application of germano-silicate optical fiber incorporated with Ag nanocrystals

银纳米晶体掺杂的高非线性石英光纤的全光转换应用

Intense green upconversion emission in Tb3+/Yb3+ co-doped alumino-germano-silicate optical fibers

Tb/Yb共掺的石英光纤的上转换绿光发光研究，研究了最佳浓度配比和发光机理。

玉米根系剖面分布对水分亏缺的响应

在水分亏缺和正常供水(土壤含水量分别维持在田间持水量的40%～45%和75%～80%)两种水分条件下,采用土柱实验方法,研究了玉米杂交种户单四号(F1)及其父本803(♂)、母本天四(♀)根系剖面分布对水分亏缺的响应。结果表明:水分亏缺除了对父本的总根重无显著影响之外,使杂交种和母本的总根重以及3个品种的总根长和根系总表面积均显著下降。在剖面分布上,水分亏缺显著降低了杂交种和母本在表层土层中的根重和根表面积,使杂交种在表层和中层土层中的根长以及亲本在深层土层中的根长显著下降。可见,玉米杂交种响应中度干旱胁迫的形态学变化是减少上层干土中的根系生长,而增加深层土层中根系的相对生长,即其深层根系分布占总根系的比重较亲本高,这种根系剖面分布的优化导致杂交种较高的生物量积累和水分利用效率。

猕猴白化病分子机制和灵长类的分子进化研究

酪氨酸酶是黑色素合成当中的关键酶。人酪氨酸酶基因包括5个外显子，在染色体11q14-q21位置上占据了约50kb长的区域。对人类眼皮肤型白化病（Oculocutaneous albinism, OCA)的许多研究表明，该病主要是由于酪氨酸酶基因的突变引起的。昆明动物研究所白化猴研究小组数十年来一直从事白化猕猴的培育和研究工作，目前饲养着2只白化猕猴和它们的后代，这提供了我们研究猕猴白化分子机制目的条件。为了弄清猕猴白化病的分子机制，我们根据人酪氨酸酶基因序列设计了5对PCR引物扩增相应的5个外显子，序列分析表明，白化猕猴珍珍酪氨酸酶基因第184个密码子第2位置（外显子1的核苷酸位置551）处发生一个C→A的无义突变，使编码丝氨酸（Ser)的密码子变成了一个终止密码，这样后面1038bp的核苷酸片段（346个氨基酸残基）被截断，导致酪氨酸酶翻译不完全，迄今为止，并没有发现合成黑色素的第二条生化途径，因此由于该酶不能行使正常功能而将导致黑色素不能正常表达。这可能是导致该例猕猴白化病的原因。为了解酪氨酸酶基因序列变异的规律及其与功能的关系，探讨该基因作为系统发育研究中遗传标记的有效性，我们测定了黑猩猩（Pan troglodytes)、倭黑猩猩（Pan paniscus)、大猩猩（Gorilla gorilla)、猩猩(Pongo pygmaeus)、长臂猿（Hylobates lar)、食蟹猴（Macaca fascicularis)、狒狒（Simia cynocephalus)、猕猴（Macaca mulatta)、熊猴（Macaca assamensis)、菲氏叶猴（Presbytis p. crepusculus)、白臀叶猴（Pygathrix nemaeus)、滇金丝猴（Rhinopithecus r. bieti）和蛛猴（Ateles paniscus)13个灵长类中代表种的酪氨酸酶基因全部5个外显子的DNA序列。基于这些序列，用简约法构建了分子系统树。结果表明，人猿超科与旧大陆猴各自形成一单系群。人猿超科各物种和旧大陆猴有明显分化，人与大猩猩的关系比人与黑猩猩的关系近。酪氨酸酶基因在解决灵长类系统发育关系上是一个较有用的基因。为了进一步了解中国猕猴（Macaca mulatta)的亚种分化和不同地理群体间的基因流状况，我们测定了来自中云南、广西、福建、海南、浙江、河南、湖南、湖北、安徽、四川、贵州和越南猕猴共96只个体和一只外群食蟹猴的线粒体DNA控制区576bp的DNA序列，基于这些序列，运用距离法对中国恒河猴的分子进行和遗传多样性进行了分析，我们的研究结果显示，云南、四川和湖南猕猴群体与其它群体存在显著分析，海南群体内遗传多样性最低、四川、广西、浙江、福建和越南群体内遗传多样性较丰富。中国猕猴的分化可能存在三条路线。中国猕猴的遗传多样性较丰富。

我国南海珊瑚礁区现代沉积底栖有孔虫的生态特征研究综述

综述了南海的海南岛和南海诸岛各珊瑚礁区现代沉积底栖有孔虫研究成果，区

Selective Area Growth InGaAsP by MOVPE

The wide stripe (ISjum) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated. The characteristics of the growth ratios,thickness enhancement factors .bandgap modulation,and composition modulation vary with the growth conditions such as mask width,growth pressure. Flux of III-group precursors are outlined and the rational mechanism behind SAG MOVPE is explained. In addition,the surface spike of the SAG InGaAsP is shown and the course of it is given by the variation of V /III .

A Single Mode 980nm InGaAs/GaAs/AlGaAs Large Optical Cavity Quantum Well Laser with Low Vertical Divergence Angle

To achieve high optical power as well as low vertical divergence angle, a new kind of optimized large optical cavity (LOC) structure is applied to a ridge waveguide 980nm InGaAs/GaAs/AlGaAs multi-quantum well laser. The optical power density in the waveguide is successfully reduced. The maximum output power is more than 400mW with a slope efficiency of 0.89W/A and the far-field vertical divergence angle is lowered to 23°.

Formation mechanism of defects in annealed InP

Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.

Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.