Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.

基于TM模激射的圆柱形结构的微盘激光器

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Comparison of Q-factors between TE and TM modes in 3-D microsquares by FDTD simulation

Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films

Preferred growth of nanocrystalline silicon (nc-Si) was first found in boron-doped hydrogenated nanocrystalline (nc-Si:H) films prepared using plasma-enhanced chemical vapor deposition system. The films were characterized by high-resolution transmission electron microscope, X-ray diffraction (XRD) spectrum and Raman Scattering spectrum. The results showed that the diffraction peaks in XRD spectrum were at 2theta approximate to 47degrees and the exponent of crystalline plane of nc-Si in the film was (220). A considerable reason was electric field derived from dc bias made the bonds of Si-Si array according to a certain orient. The size and crystalline volume fraction of nc-Si in boron-doped films were intensively depended on the deposited parameters: diborane (B2H6) doping ratio in silane (SiH4), silane dilution ratio in hydrogen (H-2), rf power density, substrate's temperature and reactive pressure, respectively. But preferred growth of nc-Si in the boron-doped nc-Si:H films cannot be obtained by changing these parameters. (C) 2004 Elsevier Ltd. All rights reserved.

Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.

An improved TM method for full two-port calibration of the asymmetric test fixtures

Three known standards, including at least one transmission standard, are normally required for the full two-port calibration of test fixtures. Based on the triple-through method, a new general-purpose calibration procedure using only one known reflection standard is proposed in this paper. The experimental results show that our method call provide a simple and accurate approach to fall two-port calibration of the asymmetric test fixtures. (c) 2005 Wiley Periodicals, Inc.

Thermomagnetic behavior and first order magnetization processes of Sm3Fe29-xTx and Sm3Fe29-xTxN4 (T = V and Cr)

A systematic investigation of structure and intrinsic magnetic properties of the compounds Sm3Fe29-xTx (T = V and Cr) and their nitrides has been performed. Nitrogenation resulted in remarkable improvements in the saturation magnetization and anisotropy fields at 4.2 K and room temperature. First order magnetization processes are observed at around 5.7 T for Sm3Fe26.7V2.3 and around 2.8 T for Sm3Fe24.0Cr5.0 and Sm3Fe24.0Cr5.0N4, respectively. The spin reorientation of the easy magnetization direction of Sm3Fe26.7V2.3 is observed at around 230 K. As a preliminary result, the maximum remanence B-r of 0.94 T, the coercivity mu(0)H(C) of 0.75 T, and the maximum energy product (BH) of 108.5 kJ/m(3) for the nitride magnet Sm3Fe26.7V2.3N4 are achieved by ball-milling at 293 K.

High Q-factor TM modes in three-dimensional semiconductor microresonators

We have investigated the mode characteristics for three-dimensional (3D) semiconductor microresonators by finite-difference time-domain (FDTD) technique. The results show that the quality-factors (Q-factors) of TM-like modes are much larger than those of TE-like modes as the vertical waveguidng formed by semiconductor materials.

Prediction of simultaneously large and opposite generalized Goos-Hanchen shifts for TE and TM light beams in an asymmetric double-prism configuration

It is predicted that large and opposite generalized Goos-Hanchen (GGH) shifts may occur simultaneously for TE and TM light beams upon reflection from an asymmetric double-prism configuration when the angle of incidence is below but near the critical angle for total reflection, which may lead to interesting applications in optical devices and integrated optics. Numerical simulations show that the magnitude of the GGH shift can be of the order of beam's width.

分光光度法测定单一稀土元素的研究

“分光光度法测定单一稀土元素的研究”论文包括三部分内容：一、用导数分光光度法测定单一稀土元素。研究了稀土离子－钛铁试剂水溶液体系的三阶及四阶导数吸收光谱。在0.05-0.3N的NaOH溶液中，Pr、Nd、Sm、Eu、Dy、Ho、Er、Tm与钛铁试剂形成具有f-f跃迁吸收光谱的络合物。在350-810nm波长区间它们有各自的特征吸收峰。其高阶导数光谱不仅灵敏度增大了许多倍，且选择性也有较大的提高。如对钕的测定是特效的，而其它稀土之间虽然存在着程度不同的干扰，但用校正系数法均可方便地扣除这些干扰。本体系的常规吸收光谱的灵敏度是高氯酸体系的1.5-19.5倍，三阶导数（半峰）灵敏度是高氯酸盐的常规吸收光谱法的6-166倍，四阶导数则为其的22-401倍。如以峰－峰法测量四阶导数光谱，铒的导数摩尔吸光系数已达3.62 * 10~3。温度对导数光谱略有影响，但可以通过简单方法校正。本文拟定了用稀土－钛铁试剂的高阶导数光度法测定混合稀土中Pr、Nd、Sm、Dy、Ho、Er、Tm的方法，和文献报导的导数光度法相比，本法具有灵敏度高、分析的元素多，不用有机溶剂等优点，适合于各种混合稀土氧化物中Pr、Nd、Sm、Dy、Ho、Er、Tm的准确快速测定。二、钸－钛铁试剂显色反应机理的探讨及混合稀土中钸和铕的测定。钛铁试剂与钸、铕有形成在可见光谱区域具有光谱吸收的络合物。铕的络合物在420nm处的摩尔吸光系数为75。本文着重对于钸和钛试剂的显色反应机理进行了探讨。通过各种实验证实只有四阶钸和钛铁试剂形成红色络合物（其最大吸收峰位于500nm，摩尔吸光系数为4128）。而三阶钸与钛铁试剂仅能形成无色络合物。但在碱性介质中， 空气或浓度中的氧可将三阶钸的络合物迅速氧化为四价钸的红色络合物。因此，不需要预先将三价钸氧化后再进行显色，可直接在形成三价钸的络合物后，再通过空气氧化来显色。从而提出了分光光度法准确快速测定混合稀土中百分之十到万分之几的钸的简便方法。此外，拟定了在微酸性溶液中分光光度法测定混合稀土中铕的分析方法，除大量的钸和镱外，其它稀土对铕的测定无干扰。三、计算光度分析法测定单一稀土元素的探讨。本工作采用三个显色体系（二甲酚橙、偶氮氯膦III、均三氯偶氮胂），达到了用计算光度分析法同时测定多个单一稀土元素的目的。比较了全主元高斯消长法、求病态方程组解的方法、抛物线拟合法，黄金分割法，BFS变R度法，布罗伊佥变R度法，梯度牛顿法、PRP其轭梯度法、FR共轭梯度法、包维尔算法、可变多面体方法，线性规划改进的单纯形法，可变误差多面体方法，网格法，复合形法等十七个计算方法的结果，着重探扩充了测定点数、波长位置、目标函数、约束条件、组分数目、组分含量范围及实验误差、一个体系和多个体系对结果的影响。获得了一些有指导意义的经验规律。其中以抛物线拟合、黄金分割、可变误差多面体等方法较为优越。合成样品五组分和八组分混合稀土氧化物分析获得较为满意的结果。

M_2RSbO_6:R~(3+)复合氧化物的合成组成结构和性能的研究(M = Ba、Sr、Ca, R = La、Gd、Y、Bi, R' = Sm、Eu、Dy、Ho、Er、Tm)

对于稀土与非稀土所组成的二元复合氧化物的研究国外已有较多的报导。但是，对于稀土和锑的复合氧化物只是近年来才开始有些研究工作。含锑与稀土的多元复合氧化物的报导就更少。本文在我们实验室张静筠等人三元复合氧化物研究的基础上，开展Mo—Sb_2O_5—R_2O_3—R'_2O_3—Bi_2O_3多元体系的研究工作，这对于我国丰产元素稀土和锑的应用以及利用Bi~(3+)的激活与敏化将是有益的。本文按Thornton等人的方法合成了Ba_2BiSbO_6，Ba_2GdSbO_6，按EγΦECEHKO等人的方法合成了M_2RSbO_6 (M = Ba、Sr、Ca, R = La Y)。并以M_2RSbO_6为基质，掺Sm~(3+)、Eu~(3+)、Dy~(3+)、Ho~(3+)、Er~(3+)、Tm~(3+)和Bi~(3+)，研究它们的化学组成，晶体结构与发光性能的关系及规律，Bi~(3+)的荧光和敏作用。同时研究了它们的磁学和热学性能。化学组成的分析结果表明，计算的含量与实验测得的含量符合较好，说明化学反应是按化学计量比进行的。通过X-射线粉沫物相分析和晶胞参数的理论计算确定M_2RSbO_6(M = Ba、Sr、R = La、Y、Gd、Bi)复合氧化物是属于立方钙钛太型化合物。空间群为Fm3m，点群为Oh。用计算机计算了Ca_2YSbO_6的晶胞参数并结合荧光光谱分析确定它属于畸变的单斜钙钛矿，空间群为P_(21)。用磁天平测量了样品M_2RSbO_6 (M = Ba、Sr、Ca; R = Gd、Y、Bi)的磁化率。除Ba_2GdSbO_6是顺磁性物质外共余的都是反磁性的物质。按所用原料Sb_2O_5计算的磁化率与测量值符合较好，表明在所研究的M_2RSbO_6化合物中锑是正五价的。用热重热差分析仪测量了样品在反应中的热性能，观察到在化合物形成的过程中所用原料Sb_2O_3大约在520 ℃左右氧化变为Sb_2O_5。除所用原料碳酸盐分解外没有挥发性的物质，这就进一步证明化学组成分析和磁化率测量的结果是正确的。光学测量的结果表明，所有的磷光体随着激活离子浓度的不同其光谱都发生规律性的变化。对于不同Eu~(3+)浓度的Ba_2YSbO_6:Eu~(3+)和Br_2YSbO_6:Eu~(3+), Bi~(3+)体系用254nm激发时均能观察到Eu~(3+)于595nm的尖峰发射。用基质和Bi~(3+)的激发峰325nm激发时，明显地看到敏化剂Bi~(3+)到Eu~(3+)的能量传递，使Eu~(3+)于595nm的发射大大增强，我们认为Bi~(3+)对Eu~(3+)的敏化作用是由于基质和Bi~(3+)的~1S。→ 3P_1的跃迁吸收了激发的能量，然后无辐射弛豫到Eu~(3+)的激发态~5D_0，产生~5D_0 → 7F_1的磁偶极跃迁。对于不同Eu~(3+)浓度的Sr_2YSbO_6:Eu~(3+)和Sr_2YSbO_6:Eu~(3+), Bi~(3+)体系用245nm激发时均能观察到Eu~(3+)于595nm的尖峰发射。用基质和Bi~(3+)的激发峰335nm激发时，观察到基质和Bi~(3+)对Eu~(3+)具有某种能量传递。敏化作用机理与上述的Ba_2YSbO_6:Eu~(3+)和Ba_2YSbO_6:Eu~(3+), Bi~(3+)体系相同。对于不同Eu~(3+)浓度的Ca_2YSbO_6:Eu~(3+)和Ca_2YSbO_6:Eu~(3+), Bi~(3+)体系用396nm激发时，均能观察到Eu~(3+)于613nm很强的尖峰发射。用基质和Bi~(3+)的激发峰313nm激发时，见到Bi~(3+)和基质对Eu~(3+)具有某种能量传递，这种敏化作用主要是由于基质和Bi~(3+)的3P_1 → ~1S_0的400nm的宽带发射和Eu~(3+)的~7F_0 → ~5L_6的396nm的吸收相匹配产生~5L_6→~5D_0→~7F_2的跃迁。通过对激发光谱和荧光光谱的分析给出了Ca_2Y_(0.96)Eu_(0.04)SbO_6的能级图，从实验上可见，Eu~(3+)的发光强烈地依赖于钙钛矿的结构，当Eu~(3+)在空间群为Fm3m 的Ba_2YSbO_6和Sr_2YSbO_6中处于Oh点对称性时，主要是~5D_0 → ~7F_1的磁偶极跃迁。当Eu~(3+)在空间群为P_(21)的单斜钙钛矿中时，主要是~5D_0 → ~7F_2的电偶极跃迁。对于不同掺杂浓度M_2YSbO_6:R~(13+)(M = Ba、Ca; R' = Sm、Dy、Ho、Er、Tm)体系，通过激发和荧光光谱的研究，合理地确定了谱项。发现基质对Sm~(3+)、Dy~(3+)、Ho~(3+)具有敏化作用。对不同Bi~(3+)浓度的Ca_2YSbO_6:Bi~(3+)，由激发和荧光光谱可见Bi~(3+)具有二个激发带，第一激发带位于240nm处相当于~1S_0 → ~1P_1的跃迁，第二激发带位于315nm处相当于~1S_0 → ~3P_1的跃迁。有一个很强的兰紫色发射位于400nm处相当于~3P_1 →~1S_0的跃迁。

尼龙1010的平衡热力学参数及其γ-辐照产物的结晶过程

尼龙1010是我国特有的工程塑料。但对它的结构与性能的基础研究并不多见。迄今为止，许多聚酰胺的晶胞参数已被测定，并比较准确地计算出它们的结晶密度ρ_c。可是，尚未见到过有关尼龙1010的ρ_c的报道。此外，结晶高聚物的平衡熔融温度T°_m和平衡熔融热ΔH°_m是非常重要的热力学参数，尤其是后者更是用量热法计算结晶度的基准。早在50年代，Flory等对它的T°_m和ΔH°_m进行了许多研究，由于受当时历史条件限制，这些数值的准确性不高，不能当作平衡状态的数值。尼龙1010经γ-射线辐照后，有可能提高它的使用温度，扩大它的应用范围和领域。但至今未见到过大剂量下γ-辐照尼龙1010及其添加强化交联剂BMI的γ辐照产物的热学性能和结晶过程的研究。随着科学技术的发展，目前迫切需要准确的尼龙1010的ρ_c、T°_m、ΔH°_m的数值，以及大剂量下γ-辐照产物的热学性能和结晶过程的详细研究，以便更合理地开发和利用这一材料为四化建设服务。本文用DSC差示扫描量热仪、红外光谱仪、广角X-射线衍射仪以及TMS热机械仪等研究手段，准确地测定了尼龙1010的平衡热力学参数，并对尼龙1010及其添加强化交联剂BMI的γ-辐照产物的热学性能和结晶过程进行了详细的研究。用红外吸光度-密度外推法求得尼龙1010的ρ_a（非晶密度）= 1.003 ρ_c = 1.098g/cm~3。1.098g/cm~3与用X-射线衍射法求得的1.135g/cm~3比较，认为后者更为合理。用介稳态结晶试样的ΔH_m-(V-bar)_(sp)的线性关系，求得尼龙1010的平衡熔融热。ΔH°_m = 244.0J/g。企图用常用的Hoffman Tm-Tc外推法来确定尼龙1010的平衡熔融温度T°_m，但未能成功，并指出其升温过程中重结晶异常迅速是此法行不通的主要原因。用Kamide提出的双重外推法成功地求得尼龙1010的平衡熔融温度：T°_m = 487 K = 214 ℃通过详细地研究尼龙1010及其添加强化并联剂BMI的γ辐照产物的热学性能，发现强化交联剂BMI的加入，使尼龙1010大分子的交联更容易，但也使得空间网络较松散；同时γ辐照尼龙1010在再次等速升温过程中出现冷结晶峰是辐照产物中存在可结晶部分、交联网络阻碍可结晶部分结晶两者共同作用的结果。交联网络使可结晶部分在降温过程中来不及结晶，当再次升温到玻璃化转变温度以上时，链段冻结被解除，可结晶的分子链段进行有序排列而结晶，导致冷结晶峰的出现。冷结晶峰的强度和位置与辐照产物中可结晶部分的多少、交联网络的大小即相邻交联点之间的分子量Mc的大小、交联网络的松散程度以及试样的热历史都有关。选择适当的等温结晶温度，用DSC-2C型差示扫描量热仪研究了尼龙1010及其γ-辐照产物和添加强化交联剂BMI的γ-辐照产物的等温结晶过程。用DSC-2C 3600 TADS计算机自带的部分面积程序进行动力学数据处理。通过仔细的等温结晶动力学研究，发现γ辐照尼龙10104 Avrami指数n几乎不受辐照剂量R和强化交联剂BMI的影响，且一般为3.75，这说明尼龙1010及其γ辐照产物的结晶过程接近于均相三维成核。随着辐照剂量R和强化交联剂BMI含量的增大，折迭链表面自由能σe值增大，σe值的分布可能变宽，σe值的这种变化可以归因于辐照剂量R和强化交联剂BMI的含量增大时，交联网络增多，交联密度增大，Mc值的分布变宽，链尾和小链圈的数目增多，活动性减小，同时链尾也增长，结果导致σe（链尾、链圈）增大，从而σe值变大，σe值的分布可能变宽。σe值的这种变化也正是过冷度增大、拖尾现象严重、总的动力学速率常数Kn和结晶速率t_(0.5)~(-1)变小的总根源。由此可见，对于分子量不同或分子结构有差别的同一种结晶高聚物来说，σe值可以作为衡量结晶能力大小的定量标准。