High-output very small aperture laser and its near-field distribution properties - art. no. 60200L

A Very-Small-Aperture Laser with a 250 X 500 nm(2) aperture has been created on a 650nm edge emitting LD. The highest far-field output power is 1.9mW and the power per unit emission area is about 15 MW/mu m(2). The special fabrication process and high output power mechanism are demonstrated respectively. The near-field distribution properties are also analyzed theoretically and experimentally.

An analysis and simulation about conditioned launch for very short reach (VSR-4)

VSR4 links use graded index multimode fibers (GIMMFs) as the transmission medium with operation wavelength 850nm. For cost reasons, VCSEL has been selected as the optical source to VSR4. The minimum bandwidth specification for 62.5um GIMMF in VSR4 is only 400 MHz(.)km for over-filled-launch (OFL) condition. The distance of 300 meters is limited over transmission rates of 1.25Gbit/s on the basis of this specification. In order to overcome the OFL bandwidth limit by selective excitation of a limited number of modes, conditioned launch technique is investigated. In this paper, based on a comprehensive dispersion theory of GIMMF, a model is built to simulate the transmission of optical signal in GIMMFs and a comparison between OFL and conditioned launch is analyzed. The result can be the guidelines for the best choice of techniques for various LAN and interconnect systems also.

Slow Light Effect and Multimode Lasing in a Photonic Crystal Waveguide Microlaser

The slow light effect in a photonic crystal waveguide is investigated theoretically and experimentally. Theoretical calculation indicates that there is a slow light region for the even mode, from which the resonance and lasing in a microcavity would benefit. A photonic crystal waveguide microlaser is fabricated, which is related to the group velocity of c/120.6.

Transient and nonlinear analysis of slow-light pulse propagation in an optical fiber via stimulated Brillouin scattering

We investigate slow-light pulse propagation in an optical fiber via transient stimulated Brillouin scattering. Space-time evolution of a generating slow-light pulse is numerically calculated by solving three-wave coupled-mode equations between a pump beam, an acoustic wave, and a counterpropagating signal pulse. Our mathematical treatments are applicable to both narrowband and broadband pump cases. We show that the time delay of 85% pulse width can be obtained for a signal pulse of the order of subnanosecond pulse width by using a broadband pump, while the signal pulse is broadened only by 40% of the input signal pulse. The physical origin of the pulse broadening and distortion is explained in terms of the temporal decay of the induced acoustic field. (C) 2009 Optical Society of America

Reducing group-velocity-dispersion-dependent broadening of stimulated Brillouin scattering slow light in an optical fiber by use of a single pump laser

We propose a method of effectively extending the stimulated Brillouin scattering (SBS) gain bandwidth in a single-mode optical fiber to reduce group-velocity-dispersion (GVD)-dependent pulse spread of SBS slow light. This can be done by overlapping doublet SBS gain spectra synthesized from a single pump laser. Numerical calculations are performed to verify our proposed method. We find that there exists the optimum spectral separation between two center frequencies of the doublet SBS gain spectrum with respect to the inherent spectral width of the pump laser, which makes it possible to effectively reduce the signal pulse broadening due to GVD. We show that the maximum time delay of the amplified signal pulse can be approximately two times longer than that by a previously reported method using a single broadband pump laser. (c) 2008 Optical Society of America.

Zero-broadening SBS slow light propagation in an optical fiber using two broadband pump beams

A new method of tailoring stimulated Brillouin scattering (SBS) gain spectrum for slow light propagation is proposed by use of two Gaussian-shaped broadband pump beams with different powers and spectral widths. The central frequency interval between the two pump beams are carefully set to be two inherent Brillouin frequency shift, ensuring that the gain spectrum of one pump has the same central frequency with the loss spectrum of the other one. Different gain profiles are obtained and analyzed. Among them a special gain profile is found that ensures a zero-broadening of the signal pulse independent of the Brillouin gain. This is owing to the compensation between the positive gain-dependent broadening and the negative GVD (group velocity dispersion) dependent broadening. The relationship of two pump beams is also found for constructing such a gain profile. It provides us a new idea of managing the broadening of SBS-based slow pulse by artificially constructing and optimizing the profile of gain spectrum. (c) 2008 Optical Society of America.

SBS-based slow light in optical fibers: optimum design considerations for undistorted slow-light signal propagation in steady-state and transient regimes

SPIE

Distortion management of SBS slow light in a single-mode optical fiber by optimization of broadband SBS gain spectrum

SPIE

SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS

A theoretical study is presented of the lateral confinement potential (CP) in the very narrow mesa channels fabricated in the conventional two-dimensional (2D) electron gas in GaAs-AlxGa1-xAs heterostructures. The ID electronic structures are calculated in the framework of the confinement potential: V(x) = m* omega0(2)x2/2 for Absolute value of x

CHARACTERISTICS OF THE MAGNETIC DEPOPULATION OF SUBBANDS IN VERY NARROW SYSTEMS

We present a model for electrons confined in narrow conducting channels by a parabolic well under moderate to high magnetic fields which takes into account a cutoff in the filling of the subbands. Such a cutoff gives rise to energy-separated subbands and a two-dimensional (2D) like subband depopulation, resulting in a relation between sublevel index n and inverse magnetic field B-1 such that in the high-field regime it changes over to the well-known 2D form as expected, and in the moderate field regime it shows pronounced deviation from linearity. This agrees well with the experimental results. The linear region of the n-B-1 experimental plot is believed to arise from the two dimensionality of the system. Calculations show that no resolvable 1D sublevel exists in the 0.5-mu-m-wide wire at very small magnetic fields (including zero field), which agrees qualitatively with the experimental results found in other wires that the Hall resistance, R(H), approaches its classical value B/n(e)e in this region and R(H) = 0 at B = 0, where n(e) is the electron concentration. In this model the linear and nonlinear regions in the experimental n-B-1 plot are used to extract the characteristic frequency omega-0, and the effective 2D electron concentration N(e)2D, respectively.

NEW TYPE OF SILICON MATERIAL WITH VERY HIGH-QUALITY SURFACE-LAYER ON INSULATING DEFECT LAYER

A new-type silicon material, silicon on defect layer (SODL) was proved to have a very high quality surface microstructure which is necessary for commercially feasible high-density very large scale integrated circuits (VLSI). The structure of the SODL material was viewed by transmission electron microscopy. The SODL material was also proved to have a buried defect layer with an insulating resistivity of 5.7 x 10(10) OMEGA-cm.

Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case

Perpendicular transport in a specially designed, doped and weakly coupled GaAs/AlAs superlattice is investigated. A linear current-voltage at a bias within +/-10 mV and a negative differential velocity effect at a bias of about +/-40 mV are observed at low temperatures. The miniband conductance near zero electric field is studied as a function of temperature. It is found that the measured conductance increases slightly as the temperature increases to about 30 K, decreases as the temperature rises from 30 K to 70 K, and then increases strongly above 70 K, indicating the existence of a mobility gap.