Bright red electroluminescent devices based on a soluble lanthanide complex Eu(DBM)(3)(phen)

Electroluminescent devices with PVK film doped with Eu(DBM)(3)(phen) and PBD were fabricated. The device structure of glass substrate/indium-tin-oxide/PPV/PVK:Eu(DBM)(3)-(phen):PBD/Alq(3)/Al was employed. The emissive layer was formed by spin-casting method. A sharply red electroluminescence with a maximum luminance of 114.4 cd/m(2) was achieved at 42 V.

Unidirectional current flow of reversible redox couples on a MoO3 film-modified microelectrode

In this paper, we have investigated the reactivity of the molybdenum oxide film toward some standard redox systems (e.g., ferrocene (Fc) and its derivatives) and observed a few interesting phenomena. The results demonstrate that the electrochemical behaviour of Fc and its derivatives at the oxide-modified carbon fiber (CF) microelectrode differs from that at a bare CF microelectrode, The conductivity of the molybdenum oxide film is seriously affected by the range and the direction of the potential scan, which influences the electrochemical behaviour of these redox systems at the film electrode. If the cycling potential is more positive than the reduction potential of the molybdenum oxide film, the reduction and oxidation peak currents of Fc and its derivatives could not be observed. The result indicates that the molybdenum oxide film on a microelectrode surface cannot transfer electrons between the surface of the electrode and Fc or its derivatives due to the existence of a high resistance between the interface in these potential ranges. On the other hand, if the lower limit of the scan potential was extended to a potential more negative than the reduction peak potential of the film, the oxidation peak of Fc or its derivatives appeared at about the potential relative to E-0 of Fc or its derivatives on the bare electrode, and the peak current is proportional to the concentration of these couples in the electrolyte. To our surprise, the peak height on the modified electrode is much larger than that on the bare CF microelectrode under the same conditions in the range of low concentration of these couples, and the oxidation peak potential of these couples is more negative than that on the bare CF microelectrode. On the basis of the experimental observation, we propose that these redox couples may undergo an interaction with the reduction state of the molybdenum oxide film. The new phenomena that we observed have been explained by using this interaction. (C) 1997 Elsevier Science S.A.

The fabrication of dipped CdS and sputtered ITO thin films for photovoltaic solar cells

Stable bilayer thin films of indium tin oxide (ITO) on CdS and CdS on ITO were formed for the window material of solar cells by chemical bath and sputtering methods. Scanning electron microscopy and X-ray diffraction studies have shown that both the ITO and CdS films are continuous, homogeneous, with high compactness. Measurement of the CdS film thickness across the 2 x 4 cm(2) reveals the good uniformity of these films. Four-point probe measurements show that the resistivity of a CdS film on an ITO surface is much better than that of the single CdS film The thermal stability of an ITO/CdS bilayer, interfacial reaction and optical transmittance were investigated at different annealing temperatures and environments (air, vacuum and N-2 + H-2). The results showed that the ITO/CdS bilayer film is a good window material for the CuInSe2 and CdTe cells. It is a simple method using a small amount of the cadmium compound.

CYCLIC VOLTAMMETRIC AND SPECTROELECTROCHEMICAL STUDIES OF COPPER IN ALKALINE-SOLUTION

The behaviour of the electroplated copper film electrode on tin oxide/glass or glassy carbon surface was studied in potassium hydroxide medium by cyclic voltammetry and in situ transmission spectroelectrochemistry. The results indicate that the electroplated copper film electrode is similar to a copper electrode and cyclic voltammetry with this electrode affords more resolution. The anodic peaks were found to correspond successively to the adsorption of oxygen, the formation of a surface layer of Cu2O, the formation of a surface layer of Cu(OH)2 or CuO and formation of a thick multilayer film of CuO. This is the first time it has been proposed that a surface layer of Cu(OH)2 or CuO is formed from the oxidation of the surface layer of Cu2O. Similarly, a clear interpretation is presented that the cathodic peaks correspond successively to the reduction of CuO to Cu2O, the reductions of Cu2O to Cu and the soluble Cu(II) species to Cu. On the other hand, a shoulder peak related to the chemical transformation of Cu(OH)2 to CuO was first observed.

稳态下锡电极的轴向温度分布

根据STANNEX氧化锡电极（以下简称锡电极）的热导率曲线，以平壁导热为模型，建立了锡电极中心轴向温度分布的简化模型。根据锡电极使用的实际情况建立实验炉，测试了锡电极在稳态下的边界温度以及锡电极中心在稳态下的实际温度分布。根据实验所测得的边界条件对锡电极的温度分布作了深入细致的推导。用有限差分法求出了锡电极的轴向温度分布，计算结果跟实际测试温度能较好地吻合。对电极导电的牵引材料的选择有很好的指导意义，同时也为玻璃电熔的散热与功率配置以及电极使用过程中的冷却提供了较好的参考。根据实际温度情况采取相应的冷却措

Electrochemical fabrication and electronic behavior of polypyrrole nano-fiber array devices

Electrochemically active Polypyrrole (PPy) nano-fiber array device was fabricated via electrochemical deposition method using aluminum anodic oxide (AAO) membrane as template. After alkaline treatment electrochemically active PPy nano-fiber lost electrochemical activity, and became electrochemically inactive PPy. The electronic properties of PPy nano-fiber array devices were measured by means of a simple method. It was found that for an indium-tin oxide/electrochemically inactive PPy nano-fiber device, the conductivity of nano-fiber increased with the increase of voltage applied on the two terminals of nano-fiber. The electrochemical inactive PPy nano-fiber might be used as a nano-fiber switching diode. Both Au/electrochemically active PPy and Au/electrochemically inactive PPy nano-fiber devices demonstrate rectifying behavior, and might have been used for further application as nano-rectifiers. (c) 2005 Elsevier B.V. All tights reserved.

Growth and characterization of new transparent conductive oxides single crystals beta-Ga2O(3): Sn

Tin oxide doped beta-Ga2O3 single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. beta-Ga2O3 single crystals doped with different Sn4+ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn4+ concentrations and annealing. (c) 2006 Elsevier Ltd. All rights reserved.

Enhancement of near-band-edge photoluminescence of ZnO thin films in sandwich configuration at room temperature

ZnO/ITO/ZnO sandwich structure films were fabricated. The effects of buffer layer on the structure and optical properties of ZnO films were investigated by x-ray diffraction (XRD), photoluminescence, optical transmittance, and absorption measurements. XRD spectra indicate that a buffer layer has the effects of lowering the grain orientation of ZnO films and increasing the residual stresses in the films. The near-band-edge emissions of ZnO films deposited on both single indium tin oxide (ITO) buffer and ITO/ZnO double buffers are significantly enhanced compared with that deposited on a bare substrate due to the quantum confinement effect. (C) 2006 American Institute of Physics.

Organic light-emitting diodes with magnesium doped CuPc as an efficient electron injection layer

Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide (ITO)/copper phthalocyanine (CuPc)/NN'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/Tris(8-quinolinolato) aluminum(Alq(3))/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc (1:2 in weight) shows a brightness of 4312 cd/m(2) and a current efficiency of 2.52 cd/A, while the reference device exhibits 514 cd/m(2) and 1.25 cd/A.

The synthesis of MDMO-PPV capped PbS nanorods and their application in solar cells

Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) capped PbS nanorods about 100 nm in diameter and 400 nm in length were synthesized via a hydrothermal route in toluene and dimethylsulfoxide solution. By blending the PbS nanorods with the MDMO-PPV as the active layer, bulk heterojunction solar cells with an indium tin oxide (ITO)/polyethylenedioxythiophene/polystyrenesulphonate (PEDOT PSS)/MDMO-PPV PbS nanorods/Al structure were fabricated in a N-2 filled glove box, Current density-voltage characterization of the devices showed that the solar cells with PbS nanorods hybrid with MDMO-PPV as active layer were better in performance than the devices with the polymer only. (C) 2009 Elsevier B.V. All rights reserved.

Light extraction of GaN LEDs with 2-D photonic crystal structure

Ultraviolet photo-lithography is employed to introduce two-dimensional (2D) photonic crystal (PC) structure on the top surface of GaN-based light emitting diode (LED). PC patterns are transferred to 460-nm-thick transparent indium tin oxide (ITO) electrode by inductively coupled plasma (ICP) etching. Light intensity of PC-LED can be enhanced by 38% comparing with the one without PC structure. Rigorous coupled wave analysis method is performed to calculate the light transmission spectrum of PC slab. Simulation results indicate that total internal reflect angle which modulated by PC structure has been increased by 7 degrees, which means that the light extraction efficiency is enhanced outstandingly.

Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices

ZnO nanocrystals were synthesized by hydrolysis in methanol. X-ray diffraction and photoluminescence spectra confirm that good crystallized ZnO nanoparticles were formed. Utilizing those ZnO nanoparticles and poly [2- methoxy-5 - (3',7'-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV), light emitting devices with indium tin oxide (ITO)/poly(3,4-oxyethyleneoxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS)/ ZnO:MDMO-PPV/Al and ITO/PEDOT:PSS/MDMO-PPV/Al structures were fabricated. Electrolummescence (EL) spectra reveal that EL yield of hybrid MDMO-PPV and ZnO nanocrystals devices increased greatly as compared with pristine MDMO-PPV devices. The current-voltage characteristics indicate that addition of ZnO nanocrystals can facilitate electrical injection and charge transport. The decreased energy barrier to electron injection is responsible for the increased efficiency of electron injection. (c) 2007 Elsevier B.V. All rights reserved.

Synthesis and structures of morphology-controlled ZnO nano- and microcrystals

Zinc oxide flower-like bunches were directly synthesized on indium-doped tin oxide (ITO) glass substrates through a simple chemical bath deposition process. By adjusting precursor concentration, other morphologies ( spindles and rods) were also obtained. All of them are hexagonal and single crystalline in nature and grow along the [ 0001] crystallographic direction. The possible growth mechanisms for these nano- and microcrystals were proposed. It was revealed that both the inherent highly anisotropic structure of ZnO and the precursor concentration play crucial roles in determining final morphologies of the products. In addition, vibrational properties of ZnO crystals with different morphologies were investigated by Raman spectroscopy.

Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J

For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO), which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results.