94 resultados para oblique-wave radiation and diffraction


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Adiabatic shear localization is a mode of failure that occurs in dynamic loading. It is characterized by thermal softening occurring over a very narrow region of a material and is usually a precursor to ductile fracture and catastrophic failure. This reference source is the first detailed study of the mechanics and modes of adiabatic shear localization in solids, and provides a systematic description of a number of aspects of adiabatic shear banding. The inclusion of the appendices which provide a quick reference section and a comprehensive collection of thermomechanical data allows rapid access and understanding of the subject and its phenomena. The concepts and techniques described in this work can usefully be applied to solve a multitude of problems encountered by those investigating fracture and damage in materials, impact dynamics, metal working and other areas. This reference book has come about in response to the pressing demand of mechanical and metallurgical engineers for a high quality summary of the knowledge gained over the last twenty years. While fulfilling this requirement, the book is also of great interest to academics and researchers into materials performance.

Table of Contents

1Introduction1
1.1What is an Adiabatic Shear Band?1
1.2The Importance of Adiabatic Shear Bands6
1.3Where Adiabatic Shear Bands Occur10
1.4Historical Aspects of Shear Bands11
1.5Adiabatic Shear Bands and Fracture Maps14
1.6Scope of the Book20
2Characteristic Aspects of Adiabatic Shear Bands24
2.1General Features24
2.2Deformed Bands27
2.3Transformed Bands28
2.4Variables Relevant to Adiabatic Shear Banding35
2.5Adiabatic Shear Bands in Non-Metals44
3Fracture and Damage Related to Adiabatic Shear Bands54
3.1Adiabatic Shear Band Induced Fracture54
3.2Microscopic Damage in Adiabatic Shear Bands57
3.3Metallurgical Implications69
3.4Effects of Stress State73
4Testing Methods76
4.1General Requirements and Remarks76
4.2Dynamic Torsion Tests80
4.3Dynamic Compression Tests91
4.4Contained Cylinder Tests95
4.5Transient Measurements98
5Constitutive Equations104
5.1Effect of Strain Rate on Stress-Strain Behaviour104
5.2Strain-Rate History Effects110
5.3Effect of Temperature on Stress-Strain Behaviour114
5.4Constitutive Equations for Non-Metals124
6Occurrence of Adiabatic Shear Bands125
6.1Empirical Criteria125
6.2One-Dimensional Equations and Linear Instability Analysis134
6.3Localization Analysis140
6.4Experimental Verification146
7Formation and Evolution of Shear Bands155
7.1Post-Instability Phenomena156
7.2Scaling and Approximations162
7.3Wave Trapping and Viscous Dissipation167
7.4The Intermediate Stage and the Formation of Adiabatic Shear Bands171
7.5Late Stage Behaviour and Post-Mortem Morphology179
7.6Adiabatic Shear Bands in Multi-Dimensional Stress States187
8Numerical Studies of Adiabatic Shear Bands194
8.1Objects, Problems and Techniques Involved in Numerical Simulations194
8.2One-Dimensional Simulation of Adiabatic Shear Banding199
8.3Simulation with Adaptive Finite Element Methods213
8.4Adiabatic Shear Bands in the Plane Strain Stress State218
9Selected Topics in Impact Dynamics229
9.1Planar Impact230
9.2Fragmentation237
9.3Penetration244
9.4Erosion255
9.5Ignition of Explosives261
9.6Explosive Welding268
10Selected Topics in Metalworking273
10.1Classification of Processes273
10.2Upsetting276
10.3Metalcutting286
10.4Blanking293
 Appendices297
AQuick Reference298
BSpecific Heat and Thermal Conductivity301
CThermal Softening and Related Temperature Dependence312
DMaterials Showing Adiabatic Shear Bands335
ESpecification of Selected Materials Showing Adiabatic Shear Bands341
FConversion Factors357
 References358
 Author Index369
 Subject Index375

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A new type of sensor with the flexible substrate is introduced. It is applicable in measuring instantaneous heat flux on the model surface in a hypersonic shock tunnel. The working principle, structure and manufacture process of the sensor are presented. The substrate thickness and the dynamic response parameter of the sensor are calculated. Because this sensor was successfully used in measuring the instantaneous heat flux on the surface of a flat plate in a detonation-driven shock tunnel, it may be effective in measuring instantaneous heat flux on the model surface.

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The dynamics and harmonics emission spectra due to electron oscillation driven by intense laser pulses have been investigated considering a single electron model. The spectral and angular distributions of the harmonics radiation are numerically analyzed and demonstrate significantly different characteristics from those of the low-intensity field case. Higher-order harmonic radiation is possible for a sufficiently intense driving laser pulse. A complex shifting and broadening structure of the spectrum is observed and analyzed for different polarization. For a realistic pulsed photon beam, the spectrum of the radiation is redshifted for backward radiation and blueshifted for forward radiation, and spectral broadening is noticed. This is due to the changes in the longitudinal velocity of the electron during the laser pulse. These effects are much more pronounced at higher laser intensities giving rise to even higher-order harmonics that eventually leads to a continuous spectrum. Numerical simulations have further shown that broadening of the high harmonic radiation can be limited by increasing the laser pulse width. The complex shifting and broadening of the spectra can be employed to characterize the ultrashort and ultraintense laser pulses and to study the ultrafast dynamics of the electrons. (c) 2006 American Institute of Physics.

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We obtain analytical solutions of the coupled wave equations that describe the Bragg diffraction of ultrashort pulsed finite beams by a thick planar grating, using two-dimensional coupled wave theory. The diffraction properties for the case of an ultrashort pulsed finite beam with Gaussian profiles in both the time and spatial domains are investigated. The spectral bandwidth of the diffracted beam, the Bragg selectivity bandwidth and the diffraction efficiency of the volume grating are influenced by the geometry parameter and the input bandwidth. Therefore extra attention should be paid to designing optical elements based on volume gratings for use with ultrashort pulsed waves in applications of pulse shaping and processing.

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We described a highly efficient polarizing beam splitter (PBS) of a deep-etched binary-phase fused-silica grating, where TE- and TM-polarized waves are mainly diffracted in the -1st and 0th orders, respectively. Tb achieve a high extinction ratio and diffraction efficiency, the grating depth and period are optimized by using rigorous coupled-wave analysis, which can be well explained based on the modal method with effective indices of the modes for TE/TM polarization. Holographic recording technology and inductively coupled plasma etching are employed to fabricate the fused-silica PBS grating. Experimental results of diffraction efficiencies approaching 80% for a TE-polarized wave in the -1st order and more than 85% for a TM-polarized wave in the 0th order were obtained at a wavelength of 1550 nm. Because of its compact structure and simple fabrication process, which is suitable for mass reproduction, a deep-etched fused-silica grating as a PBS should be a useful device for practical applications. (C) 2007 Optical Society of America

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We report an organic/inorganic polymer composite based on the chemically hybridized photoconductor CdS-PVK nanocomposite doped with a new second-order optically nonlinear chromophore 1-n-butoxy-2-methyl-(4-p-nitrophenylazo)benzene (BMNPAB) and plasticizer 9-ethyl-carbazole (ECZ) to manifest a photorefractive (PR) effect. A detailed description of the synthesis and characterization of BMNPAB is presented. The poled film including PVK-10-CdS nanocomposite and BMNPAB exhibits a high second harmonic generation (SHG) coefficient of 31 pm/V The photoconductivity of PVK-CdS nanocomposite also was studied here. Two-beam coupling experiment clearly indicated an asymmetric optical energy exchange between two beams on the polymer composite at zero electrical field, and the two-beam coupling gain of 50.0 cm(-1) and diffraction efficiencv of 4.2% were obtained at 647.1 nm wavelength. (C) 2007 Elsevier Ltd. All rights reserved.

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Laser conditioning effects of the HfO2/SiO2 antireflective (AR) coatings at 1064 nm and the accumulation effects of multishot laser radiation were investigated. The HfO2/SiO2 AR coatings were prepared by E-beam evaporation (EBE). The singleshot and multi-shot laser induced damage threshold was detected following ISO standard 11254-1.2, and the laser conditioning was conducted by three-step raster scanning method. It was found that the single-shot LIDT and multi-shot LIDT was almost the same. The damage mostly > 80% occurred in the first shot under multi-shot laser radiation, and after that the damage occurring probability plummeted to < 5%. There was no obvious enhancement of the laser damage resistance for both the single-shot and multi-shot laser radiation of the AR coatings after laser conditioning. A Nomarski microscope was employed to map the damage morphology, and it found that the damage behavior is defect-initiated for both unconditioned and conditioned samples. © 2004 Elsevier B.V. All rights reserved.

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使用倾斜角沉积(GLAD)的电子束蒸发技术,制备了倾斜角度在60°~85°之间的ZnS双折射雕塑薄膜(STF)。使用X射线衍射(XRD)和扫描电镜(SEM)检测了ZnS薄膜的结晶状态和断面形貌,使用Lamda-900分光光度计测量了薄膜在不同的偏振光入射时的透过率。研究发现,室温下倾斜沉积ZnS薄膜断面为倾斜柱状结构,且薄膜的结晶程度不高。在相同的监控厚度时,随倾斜角度增大,沉积到基片上的薄膜厚度逐渐变小,但仍然大于余弦曲线显示的理论厚度。根据偏振光垂直入射时薄膜的透过光谱计算了不同角度沉积的薄膜的折射率

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The refractive indices of thin films, containing dielectric and voids in an oblique columnar structure, are, modelled in the quasi-static limit. The dielectric function is shown to be strongly dependent on the angle of incidence and on the columnar orientation for p-polarized light. This model is applied to model ZnS thin films with oblique columnar structures and the computed results have been given.

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The refractive indices of thin films, containing dielectric and voids in an oblique columnar structure, are modeled by extended effective medium in the quasi-static limit. The dielectric function is shown to be strongly dependent on the angle of incidence and on the columnar orientation for p-polarized light. This model is applied to model ZrO2 thin films with oblique columnar structures and the computed results, with the Maxwell Garnett, the Bragg-Pippard, and the Bruggeman formalisms, have been given. (c) 2004 Elsevier B.V. All rights reserved.

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In spite of several classification attempts among taxa of the genus Lepus, phylogenetic relationships still remain poorly understood. Here, we present molecular genetic evidence that may resolve some of the current incongruities in the phylogeny of the leporids. The complete mitochondrial cytb, 12S genes, and parts of ND4 and control region fragments were sequenced to examine phylogenetic relationships among Chinese hare taxa and other leporids throughout the World using maximum parsimony, maximum likelihood, and Bayesian phylogenetic reconstruction approaches. Using reconstructed phylogenies, we observed that the Chinese hare is not a single monophyletic group as originally thought. Instead, the data infers that the genus Lepus is monophyletic with three unique species groups: North American, Eurasian, and African. Ancestral area analysis indicated that ancestral Lepus arose in North America and then dispersed into Eurasia via the Bering Land Bridge eventually extending to Africa. Brooks Parsimony analysis showed that dispersal events followed by subsequent speciation have occurred in other geographic areas as well and resulted in the rapid radiation and speciation of Lepus. A Bayesian relaxed molecular clock approach based on the continuous autocorrelation of evolutionary rates along branches estimated the divergence time between the three major groups within Lepus. The genus appears to have arisen approximately 10.76 MYA (+/- 0.86 MYA), with most speciation events occurring during the Pliocene epoch (5.65 +/- 1.15 MYA similar to 1.12 +/- 10.47 MYA). (c) 2005 Elsevier Inc. All rights reserved.

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A highly efficient light-trapping structure, consisting of a diffractive grating, a distributed Bragg reflector (DBR) and a metal reflector was proposed. As an example, the proposed light-trapping structure with an indium tin oxide (ITO) diffraction grating, an a-Si:H/ITO DBR and an Ag reflector was optimized by the simulation via rigorous coupled-wave analysis (RCWA) for a 2.0-mu m-thick c-Si solar cell with an optimized ITO front antireflection (AR) layer under the air mass 1.5 (AM1.5) solar illumination. The weighted absorptance under the AM1.5 solar spectrum (A(AM1.5)) of the solar cell can reach to 69%, if the DBR is composed of 4 pairs of a-Si:H/ITOs. If the number of a-Si:H/ITO pairs is up to 8, a larger A(AM1.5) of 72% can be obtained. In contrast, if the Ag reflector is not adopted, the combination of the optimized ITO diffraction grating and the 8-pair a-Si:H/ITO DBR can only result in an A(AM1.5) of 68%. As the reference, A(AM1.5) = 31% for the solar cell only with the optimized ITO front AR layer. So, the proposed structure can make the sunlight highly trapped in the solar cell. The adoption of the metal reflector is helpful to obtain highly efficient light-trapping effect with less number of DBR pairs, which makes that such light-trapping structure can be fabricated easily.

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From the effective absorption coefficient of bonded interface and the relationship of interface to reflectivity at cavity mode for double bonded vertical cavity laser, it can be seen that bonded interfaces should be positioned at the null of standing wave distribution, and the thickness of interface should be less than 20 nm. Using the finite elements method, the temperature contour map of laser can be calculated. Results showed that the influence of thin interface to thermal characteristics of VCSELS is slight, while thick interface will lead to temperature increase of active region. SEM images demonstrate that hydrophobic bonding is suitable for the fabrication of the device, while hydrophilic bonding interface is unfavorable to optical and thermal properties of devices with interface thickness larger than 40 nm.

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A self-consistent solution of conduction band profile and subband energies for AlxGa1-xN-GaN quantum well is presented by solving the Schrodinger and Poisson equations. A new method is introduced to deal with the accumulation of the immobile charges at the AlxGa1-xN-GaN interface caused by spontaneous and piezoelectric polarization in the process of solving the Poisson equation. The effect of spontaneous and piezoelectric polarization is taken into account in the calculation. It also includes the effect of exchange-correlation to the one electron potential on the Coulomb interaction. Our analysis is based on the one electron effective-mass approximation and charge conservation condition. Based on this model, the electron wave functions and the conduction band structure are derived. We calculate the intersubband transition wavelength lambda(21) for different Al molar fraction of barrier and thickness of well. The calculated result can fit to the experimental data well. The dependence of the absorption coefficient a on the well width and the doping density is also investigated theoretically. (C) 2004 American Vacuum Society.

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The effects of an external electric field on the electronic structure of GaN nanowires, as well as GaAs nanowires for comparison, are investigated theoretically. It is found that there is an anti-crossing effect in GaN nanowires caused by a small electric field, the hole energy levels, hole wave functions, and optical oscillator strengths change dramatically when the radius (R) is around a critical radius (R-c), while this effect is absent in GaAs nanowires. When R is slightly smaller than R-c, the highest hole states are optically dark in the absence of the electric field, and a small electric field can change them to be optically bright, due to the coupling of hole states brought by the field. The Rashba spin-orbit effect is also studied. The electron Rashba coefficient alpha increases linearly with the electric field. While the hole Rashba coefficients beta do not increase linearly, but have complicated relationships with the electric field.