Growth and characterization of GaN on LiGaO2

The nearly lattice-matched (0 0 1)LiGaO2 substrates have been used for the growth of GaN by LP-MOVPE, GaN epilayers have been grown on both domains at very low input partial pressure of hydrogen and relatively low growth temperature. The differences in the growth rate, crystal and optical qualities of hexagonal GaN epilayers grown on LiGaO2 substrate with two polar domains are investigated. LiGaO2 single crystal with a single domain structure and an adequate surface plane is a promising substrate for the growth of high quality of hexagonal GaN thin films. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire

We have investigated the hydride vapor-phase epitaxy growth of (10 (1) over bar(3) over bar)-oriented GaN thick films on patterned sapphire substrates (PSSs) (10 (1) over bar0). From characterization by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and photoluminescence (PL), it is determined that the crystalline and optical qualities of (10 (1) over bar(3) over bar) GaN epilayers grown on the cylindrical PSS are better than those on the flat sapphire. However, two main crystalline orientations (10 (1) over bar(3) over bar) and (11 (2) over bar2) dominate the GaN epilayers grown on the pyramidal PSS, demonstrating poor quality. After etching in the mixed acids, these (10 (1) over bar(3) over bar) GaN films are dotted with oblique pyramids, concurrently lining along the < 30 (3) over bar2 > direction, indicative of a typical N-polarity characteristic. Defect-related optical transitions of the (10 (1) over bar(3) over bar) GaN epilayers are identified and detailedly discussed in virtue of the temperature-dependent PL. In particular, an anomalous blueshift-redshift transition appears with an increase in temperature for the broad blue luminescence due to the thermal activation of the shallow level.

Effect of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel

The objective of this paper is to investigate the effects of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel. The test section consists of a bottom silicon substrate bonded with a top glass cover. Three consecutive parts of an inlet fluid plenum, a central microchannel and an outlet fluid plenum were etched in the silicon substrate. The central microchannel had a width of 800 mu m and a depth of 30 mu m. Acetone liquid was used as the working fluid. High outlet vapor qualities were dealt with here. The flow pattern consists of a fluid triangle (shrinkage of the liquid films) and a connected long liquid rivulet, which is generated in the central microchannel in the timescale of milliseconds. The peculiar flow pattern is formed due to the following reasons: (1) the liquid rivulet tends to have a large contact area with the top hydrophilic channel surface of the glass cover, but a smaller contact area with the bottom silicon hydrophobic surface. (2) The temperature gradient in the chip width direction at the top channel surface of the glass cover not only causes the shrinkage of the liquid films in the central microchannel upstream, but also attracts the liquid rivulet populated near the microchannel centerline. (3) The zigzag pattern is formed due to the competition between the evaporation momentum forces at the vapor-liquid interfaces and the force due to the Marangoni effect. The former causes the rivulet to deviate from the channel centerline and the latter draws the rivulet toward the channel centerline. (4) The temperature gradient along the flow direction in the central microchannel downstream causes the breakup of the rivulet to form isolated droplets there. (5) Liquid stripes inside the upstream fluid triangle were caused by the small capillary number of the liquid film, at which the large surface tension force relative to the viscous force tends to populate the liquid film locally on the top glass cover surface.

Uniform mems chip temperatures in the nucleate boiling heat transfer region by selecting suitable, medium boiling number range

The not only lower but also uniform MEMS chip temperatures can he reached by selecting suitable boiling number range that ensures the nucleate boiling heat transfer. In this article, boiling heat transfer experiments in 10 silicon triangular microchannels with the hydraulic diameter of 55.4 mu m were performed using acetone as the working fluid, having the inlet liquid temperatures of 24-40 degrees C, mass fluxes of 96-360 kg/m(2)s, heat fluxes of 140-420 kW/m(2), and exit vapor mass qualities of 0.28-0.70. The above data range correspond to the boiling number from 1.574 x 10(-3) to 3.219 x 10(-3) and ensure the perfect nucleate boiling heat transfer region, providing a very uniform chip temperature distribution in both streamline and transverse directions. The boiling heat transfer coefficients determined by the infrared radiator image system were found to he dependent on the heat Axes only, not dependent on the mass Axes and the vapor mass qualities covering the above data range. The high-speed flow visualization shows that the periodic flow patterns take place inside the microchannel in the time scale of milliseconds, consisting of liquid refilling stage, bubble nucleation, growth and coalescence stage, and transient liquid film evaporation stage in a full cycle. The paired or triplet bubble nucleation sites can occur in the microchannel corners anywhere along the flow direction, accounting for the nucleate boiling heat transfer mode. The periodic boiling process is similar to a series of bubble nucleation, growth, and departure followed by the liquid refilling in a single cavity for the pool boiling situation. The chip temperature difference across the whole two-phase area is found to he small in a couple of degrees, providing a better thermal management scheme for the high heat flux electronic components. Chen's [11 widely accepted correlation for macrochannels and Bao et al.'s [21 correlation obtained in a copper capillary tube with the inside diameter of 1.95 mm using R11 and HCFC123 as working fluids can predict the present experimental data with accepted accuracy. Other correlations fail to predict the correct heat transfer coefficient trends. New heat transfer correlations are also recommended.

Are the available boiling heat transfer coefficients suitable for silicon microchannel heat sinks?

The typical MEMS fabrication of micro evaporators ensures the perfect smooth wall surface that is lack of nucleation sites, significantly decreasing the heat transfer coefficients compared with miniature evaporators fabricated using copper or stainless steel. In the present paper, we performed the boiling heat transfer experiment in silicon triangular microchannel heat sink over a wide parameter range for 102 runs. Acetone was used as the working fluid. The measured boiling heat transfer coefficients versus the local vapor mass qualities are compared with the classical Chen’s correlation and other correlations for macro and miniature capillary tubes. It is found that most of these correlations significantly over-predict the measured heat transfer coefficients. New correlations are given. There are many reasons for such deviations. The major reason is coming from the perfect smooth silicon surface that lowers the heat transfer performances. New theory is recommended for the silicon microchannel heat sink that should be different from metallic capillary tubes.

黄土区人工与天然植被对凋落物量和土壤有机碳变化的影响

在黄土丘陵区选择从耕地、草地、灌木林到乔木林样地,不同样地内设立1m×1m(乔木10m×10m)的样方,分析样方内凋落物积累量、碳氮含量、土壤有机碳(SOC)和可溶性碳(DOC)含量变化。结果表明:天然草地、灌木林、乔木林凋落物积累量依次为5.3,12.1和32.4t.hm-2;但人工灌木林和乔木林的凋落物积累量分别为6.7和11.4t.hm-2,分别是天然灌木林和乔木林的1/2和1/3。随着植被的恢复,天然植被凋落物的C/N高于人工植被(刺槐林除外)。与耕地SOC(4.67g·kg-1)相比,天然灌木林地SOC提高5.9倍,人工灌木林地提高1.8倍;天然乔木林地提高8.0倍,而人工乔木林地仅提高4.0倍。凋落物积累量与0～20cm土层土壤有机碳存在显著线性相关关系(R2>0.83),但20cm以下线性相关关系不显著。凋落物积累量与0～10cm土壤可溶性碳含量存在显著线性相关关系(R2>0.893),与10～60cm土层线性相关关系不显著,与80～100cm土壤可溶性碳存在显著线性负相关关系。

子午岭辽东栎天然林土壤种子库研究

结合野外调查与室内试验对子午岭辽东栎天然林的种群生长状况,枯落层种子库,不同坡位土壤种子库物种组成、数量特征、生活型及其与地上植被的相似性进行了较为系统的研究。结果表明:(1)试验萌发鉴定出的幼苗共有24种,隶属于16科,其中多年生草本和落叶灌木物种比例最高,分别占种子库物种总数的58.33%和12.5%;(2)整个子午岭天然辽东栎林土壤种子库总密度为12 761.44粒/m2,种子主要分布在枯枝落叶层和0-2.5 cm土层中,其中,辽东栎种子密度为752.5粒/m2,占整个样地土壤种子库总密度的5.89%,表明辽东栎种子萌发能力很差,该林分群落天然更新缓慢。(3)子午岭天然辽东栎林的下坡位物种多样性指数较其它坡位高,但各个样地物种多样性指数均高于对照;(4)天然辽东栎纯林的种群生长状况良好,树龄均为成年树种;(5)方差分析表明:辽东栎的胸径、地径在不同坡位之间均具有显著性差异(P>0.05);(6)相关分析表明:枯枝落叶层厚度,重量与土壤种子库密度之间具无显著相关性(P<0.05)。

六盘山不同森林群落地被物的持水特性

在森林生态系统中,地被物由林下枯落物、苔藓层以及表层土壤的根系组成(Kosugiet al.,2001;程金花等,2003)。在动物、微生物以及环境温湿度的作用下,地被物不断分解,补充了土壤养分含量(刘洋等,2006)。地被物在地表形成一层结构疏松的毡层,不仅能够减小雨水对地面的冲击,阻滞和分散降水,还增加了地表粗糙度,能够阻滞地表径流,吸收和储存降水,促使水分缓慢入渗,在防止土壤侵蚀和保持水土方面发挥了重要作用(张洪江等,2003)。此外,研究还发现,地被物层能够减少土壤蒸发(Schaapet al.,1997),缓解表层土温变化,影响冬季土壤的冻结过程(Sharratt,1997),同时又是林下种子萌发和幼苗更新的制约因素之一(班勇等,1995)。目前,国内外地被物研究主要集中于枯落物的凋落动态(张冀等,2001;杨玉盛等,2001;郑征等,2005)、苔藓层和枯落物的持水特性(Naethet al.,1991;薛立等,2005;叶吉等,2004;Zhanget al.,2006)、枯落物分解及养分归还(王瑾等,2001;Chandiniet al.,2002;魏晶等,2004;邵玉琴等,2004)、枯落...

六盘山森林土壤种子库与植被演替过程

以六盘山森林植被为研究对象,通过20多年的森林土壤种子库变化与植被演替过程的试验研究,分析了8种森林群落类型的不同生长年限、生长坡位、枯枝落叶层和土壤深度对土壤种子库形成过程的影响。结果表明:六盘山森林群落不同生长坡位,土壤种子库的储量坡中部>坡下部>坡上部;不同层次土壤种子库,枯枝落叶层远高于0-15 cm深土层,8种森林群落类型排序为华北落叶松林>油松林>华山松林>辽东栎林>山杨林>白桦林>灌丛>草地;土壤种子库储量高峰期,不同群落有显著差异,华山松林和油松林在林龄的30~40年,华北落叶松林在20年,辽东栎林、山杨林、白桦林在15~20年,灌丛和草地在10~20年,其森林群落生长年限与土壤种子库储量变化趋势呈拟合曲线,符合指数方程,相关性极为显著;土壤种子库物种组成丰富,草本和灌木植物远高于乔木树种,乔木树种仅有3~5种,但多数为外来入侵种,而在每一类型中出现频率最高的草地植物多为蒿类,灌木植物为柔毛绣线菊和沙棘,乔木为辽东栎树种。因此,在六盘山林区植被自然更新与合理演替的驱动种和先锋种草地植物为蒿类,灌木植物为柔毛绣线菊和沙棘,乔木为辽东栎,其次是华北落叶松、油松和华山松。

人工林凋落叶分解对土壤性质的影响

研究人工林凋落叶分解对土壤性质的影响,为防止土壤退化、增加土壤肥力提供理论指导。【方法】采集四川岷江流域上游的4种(连香树(Cercidiphyllum japonicum)、云南松(Pinus yunnanensis)、糙皮桦(Betula1 utilis)和云杉(Picea asperata))林木凋落叶及林地土壤样品,通过对当年凋落叶进行240 d室内分解培养试验,探讨不同凋落叶在分解过程中对土壤性质的影响。【结果】云杉和云南松凋落叶分解使土壤pH值降低,糙皮桦和连香树凋落叶分解使土壤pH值增加;4种凋落叶分解过程中,土壤有机质和全氮含量,土壤微生物量C、N以及4种土壤酶(蔗糖酶、过氧化氢酶、脲酶和蛋白酶)活性均有所增加。【结论】土壤有机质、全N、微生物量、酶活性增加的幅度与凋落叶分解速率及养分释放率有密切关系,凋落叶分解的越快,土壤状况改善的越明显。

Ⅰ、新生期触觉刺激和短时间母婴分离经历对大鼠成年后学习记忆的影响 Ⅱ、银杏叶提取物对育亨宾所致大鼠空间工作记忆障碍的改善作用

本研究探讨了新生期的触觉刺激（tactile stimulation，TS）和母婴分离（maternal separation，MS）经历对大鼠成年后空间工作记忆和空间参考记忆的影响，以及对海马-前额叶神经通路的突触可塑性产生的效应。Wistar品系的母鼠分娩后，以split-litter方法对仔鼠进行分组：NTS组的仔鼠不接受触觉刺激和母婴分离；TS组的仔鼠在出生后第2-9天（postnatal day 2-9，PND2-9），或者PND10-17内，每天接受短暂（约30s）的人为抓握，并进行体表标记；TS/MS组的仔鼠在PND2-9，或者PND10-17内，接受TS组相同方式的抓握并在不同体表部位进行标记后，被单独地放入一个杯子中，杯中有取自鼠巢的垫料，每天与母鼠分离1h后返回鼠巢。按照常规方法饲养这些在新生期有不同经历的大鼠，待其成年后（3月龄），采用交互延缓作业（纠正错误法和不纠正错误法）、空间分辨作业及反转学习作业测试雄性大鼠的学习记忆功能，并观察多巴胺D1受体激动剂A77636对不同组成年雄鼠的工作记忆是否产生影响。采用活体电生理方法，高频刺激海马腹侧部在前额叶记录突触效能长时程增强（long-term potentiation，LTP），对PND2-9有不同经历的成年大鼠（雌雄兼用）的海马-前额叶LTP进行比较。 结果：（1）各组仔鼠间在PND30、PND60和PND90的体重都没有显著性差异，表明本研究中的新生期TS处理和MS处理不影响仔鼠的体重发育。 （2）在交互延缓作业-纠正错误法中，各组成年雄鼠在0s延缓期的达标天数没有显著性差异；0s延缓期达标后，再经过30天的训练，PND2-9TS组和PND10-17TS组的成年雄鼠达到的最长延缓期明显高于NTS组，而且在30s—50s延缓期内达标（正确率≥86.7%）的大鼠数量明显较多（与NTS组相比）。采用交互延缓作业-不纠正错误法，各组成年雄鼠在0s延缓期的训练成绩没有显著性差异，但是，PND2-9TS组和PND10-17TS组的成年雄鼠在40s延缓期的训练正确率明显高于NTS组，表明新生期的TS处理明显改善成年雄性大鼠成年后的空间工作记忆。 （3）各组成年雄鼠在空间分辨作业及反转学习作业中的成绩没有明显差异，表明新生期TS经历对雄鼠成年后空间学习记忆的影响是任务依赖性的：与前额叶有关的空间工作记忆功能比较容易受到新生期TS经历的影响，而空间参考记忆相对不容易受到新生期TS经历的影响。 （4）多巴胺D1受体激动剂A77636只有1个剂量（0.1mg/kg）对NTS组成年雄鼠的交互延缓作业成绩具有明显的改善效应。对PND2-9TS组成年雄鼠的交互延缓作业成绩，A77636的0.1mg/kg和1mg/kg剂量都具有明显改善效应。对PND10-17TS组成年雄鼠的交互延缓作业成绩，A77636的0.01mg/kg、0.1mg/kg和1mg/kg剂量都具有明显改善效应。与NTS组相比，A77636对这2个TS组成年雄性大鼠的有效改善剂量范围较宽，提示新生期TS处理经历对雄性大鼠成年后空间工作记忆的改善效应与其前额叶的多巴胺D1受体功能上调有关。 （5）与NTS组相比，PND2-9TS组雄性和雌性成年大鼠的海马-前额叶神经通路的LTP幅度都明显增加。由于海马-前额叶神经通路在空间工作记忆功能中起重要作用，新生期TS经历增强大鼠成年后的海马-前额叶神经通路的突触可塑性，为新生期TS经历增强大鼠成年后的空间工作记忆提供了电生理学的证据。TS成年大鼠海马-前额叶LTP增强可能与其前额叶的D1受体功能上调有关。 （6）本研究中，TS/MS组的新生期仔鼠在PND2-9或者PND10-17内，除了接受与TS组相同方式的抓握并在不同部位标记外，每天与母鼠分离1h，因此通过不同日龄段的TS/MS组与TS组的比较，拟对新生期MS处理的效应进行评估。结果发现，无论是对成年雄性大鼠的各项行为测试（空间分辨作业、交互延缓作业、A77636影响交互延缓作业的量效曲线），还是对成年雌性大鼠的行为测试（明/暗箱作业、一次性被动回避反应，论文Ⅱ），或者对海马-前额叶神经通路的LTP，新生期的MS处理对本研究中的所有测试指标在统计上都没有显著性的差异，说明新生期每天1h的母婴分离经历对大鼠成年后的学习记忆等行为及前额叶突触可塑性没有产生明显的影响，对前额叶D1受体功能也没有明显影响。 （7）对所有测试指标，本研究采用的2个仔鼠日龄段PND2-9和PND10-17之间的统计比较没有明显差异，提示PND2-9和PND10-17甚至整个泌乳期都是仔鼠神经系统对外界环境刺激比较敏感的发育关键期。 结论：新生期的触觉刺激经历改善雄性大鼠成年后的空间工作记忆，增强海马-前额叶神经通路的突触可塑性和前额叶D1受体功能；新生期短时间的母婴分离经历对大鼠成年后的空间工作记忆和前额叶突触可塑性等没有产生明显的影响，可能具有一定的生物学适应意义。

CONTROLLED FORMATION AND CHARACTERISTICS OF INTERFACES IN GAAS/ALGAAS SINGLE QUANTUM-WELLS

The influence of heterostructure quality on transport and optical properties of GaAs/AlGaAs single quantum wells with different qualities was studied. In a conventional sample-A, the transport scattering time and the quantum scattering time are small and close to each other. The interface roughness scattering is a dominant scattering mechanism. From comparison between theory and experiment, interface roughness with fluctuation height 2.5 Angstrom and the lateral size of 50-70 Angstrom were estimated. For samples introducing superlattices instead of AlGaAs layers or by utilizing growth interruption, both the transport and PL measurements showed that interfaces were rather smooth in the samples. The two scattering times are much longer. The interface roughness scattering is relegated to an unimportant position. Results demonstrated that it is important to control the formation of heterostructures in order to improve the interface quality.

Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor

GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor. High-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) are combined in determining the nitrogen contents in the samples. Room temperature photoluminescence (RTPL) measurement is also used in characterizing. The influence of different Ga precursors on GaNAs quality is investigated. Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa). Nitrogen content of 5.688% is achieved with TEGa. The peak wavelength in RTPL measurement is measured to be 1278.5nm.

MOCVD growth of high quality crack-free GaN on Si(III) substrates

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.