121 resultados para improved SVM
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National Natural Science Foundation of China 60753001
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n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaOx interfacial layer and confinement effect rendered by the AlN potential barrier layer.
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Password authentication has been adopted as one of the most commonly used solutions in network environment to protect resources from unauthorized access. Recently, Lee–Kim–Yoo [S.W. Lee, H.S. Kim, K.Y. Yoo, Improvement of Chien et al.'s remote user authentication scheme using smart cards, Computer Standards & Interfaces 27 (2) (2005) 181–183] and Lee-Chiu [N.Y. Lee, Y.C. Chiu, Improved remote authentication scheme with smart card, Computer Standards & Interfaces 27 (2) (2005) 177–180] respectively proposed a smart card based password authentication scheme. We show that these two schemes are both subject to forgery attacks provided that the information stored in the smart card is disclosed by the adversary. We also propose an improved scheme with formal security proof.
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草图符号的自适应学习中,不同用户的训练样本数量可能不同。保持在不同样本数量下良好的学习效果成为需要解决的一个重要问题.提出一种自适应的草图符号识别方法,该方法采用与训练样本个数相关的分类器组合策略将模板匹配方法和SVM统计分类方法进行了高效组合.它通过利用支持小样本学习的模板匹配方法和支持大量样本学习的SVM方法,并同时利用草图符号中的在线信息和离线信息,实现了不同样本个数下自适应的符号学习和识别.基于该方法,文中设计并实现了支持自适应识别的草图符号组件.最后,利用扩展的PIBGToolkit开发出原型系统IdeaNote.评估表明,该方法可以在24类草图符号分别使用1到20个训练样本时具有较高的识别正确率和较好的时间性能.
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A novel design approach to ultra-narrow transmission-band fiber Bragg grating (FBG) is proposed and demonstrated for the first time. The new grating consists of multiple identical distributed-Bragg reflector (DBR) cavities and a it-phase-shifted gap, and hence, the proposed laser is constructed by the cascade of these identical DBR fiber lasers. By manufacturing the proposed grating in a piece of Er-Yb codoped fiber, a single-wavelength single-longitudinal-mode (SLM) fiber laser with improved efficiency is demonstrated experimentally. The experimental results show that the pump-to-signal conversion efficiency of the proposed laser is improved by a factor of two in comparison with the optimized distributed-feedback (DFB) fiber lasers. (c) 2007 Elsevier B.V. All rights reserved.
High power single-mode large-mode-area photonic crystal fiber laser with improved Fabry-Perot cavity
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A comparatively low-quality silicon wafer (with a purity of almost-equal-to 99.9%) was adopted to form a silicon-on-defect-layer (SODL) structure featuring improved crystalline silicon near the defect layer (DL) by means of proton implantation and subsequent annealing. Thus, the SODL technique provides an opportunity to enable low-quality silicon wafers to be used for fabrication of low-cost solar cells.
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The influence of the heaters on the reliability of the thermo-optic (TO) switch matrix is analyzed and an improved driving circuit based on the analyzed results is designed and fabricated. The circuit can improve the reliability of the switch matrix device from 78.87% to 97.04% for a 4×4 optical switch device with a simplified tree structure. The simulation and experimental results show the circuit can provide suitable driving current for TO switch matrix.
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An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.
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Single crystalline 3C-SiC epitaxial layers are grown on φ50mm Si wafers by a new resistively heated CVD/LPCVD system, using SiH_4, C_2H_4 and H_2 as gas precursors. X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films. Electrical properties of the epitaxial 3C-SiC layers with thickness of 1 ~ 3μm are measured by Van der Pauw method. The improved Hall mobility reaches the highest value of 470cm~2/(V·s) at the carrier concentration of 7.7 * 10~(17)cm~(-3).