QE and Suns-V-oc study on the epitaxial CSiTF solar cells

In order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar cells on the SSP (silicon sheets from powder) ribbons, QE (quantum efficiency) and Suns-V-oc study were performed on the epitaxial CSiTF solar cells fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates. The results show that the epi-layers deposited on the SSP ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar cells suffer the worse spectra response at long-wavelength range. Nearly all the dark characteristic parameters of the CSiTF solar cells are far away from the ideal values. The performances of the CSiTF solar cells are especially affected by too high I-02 (the dark saturation current of space charge region) values and too low R-sh (parallel resistance) values. The higher 102 values are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower R-sh values are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber.

Effect of fabrication conditions on I-V properties for ZnO varistor with high concentration additives by sol-gel technique

Polycrystalline nano-grain-boundary multi-doping ZnO-based nonlinear varistors with higher concentration additives have been fabricated by sol-gel and standard solid-state reaction method, of which the best sample has a very high threshold voltage of E-b = 3300 V/mm. The effect of sintering processes, sintering temperature and sintering time, and that of additive concentration of Bi2O3 on E-b of the samples are systematically investigated. The results show that the great merit of sol-gel method is its high threshold voltage obtained by a lower sintering temperature than the solid-state reaction method. The present work also shows that five phases including solid-state sintering, rich Bi liquid phase formation and ZnO as well as other additive dissolution, ZnO grain growth, the secondary phase sufficient formation and evolution have been experienced at different sintering temperatures. The hole type defect and nonhomogeneity of the microstructure will lead to the decrease of threshold voltage, i.e., the grain size and the homogeneity of the material will be important factors and directly affect the characteristic of the varistor. The sintering characteristic and the influence of Bi2O3 content on the threshold voltage are also discussed. (c) 2004 Elsevier B.V. All rights reserved.

Light-induced changes in diphasic nanocrystalline silicon films and solar cells

A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.

Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition

In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p(++)-type poly-Si ribbons by a rapid thermal chemical vapour deposition system in a temperature range from 1000 to 1150 degrees C. Activation energy measurement and room temperature/temperature dependent Hall effect measurement were performed on the poly-Si thin films prepared on the former two kinds of substrates, respectively. It seems that the electrical properties of as-prepared poly-Si thin films could be qualitatively explained by Seto's grain boundary (GB) trapping theory although there is a big difference between our samples and Seto's in gain size and film thickness etc. The experimental results reconfirm that GB itself is a kind of most effective recombination center with trapping level near the midgap and trapping state density in the order of 1012 cm(-2) magnitude. Electron beam induced current measurements on the poly-Si thin films prepared on the poly-Si ribbons also show that severe recombination occurs at the positions of GBs. (c) 2005 Elsevier B.V All rights reserved.

Effects of annealing on properties of spin-valve pinned with FeMn alloy

The magnetic properties of spin-valve pinned by FeMn layer were investigated after it was annealed at different temperatures. Its property was dependent on the vacuum annealing temperature. The pinning field could be increased through annealing at a temporature lower than 200degreesC;the pinning field would reduce and other properties be deteriorated as the annealing temperature was higher than 200degreesC; the pinning effect lost and giantmagnetic resistance disappeared at 300degreesC. Based on the results of AES analysis it was concluded that the diffusion in spin-valve multilayer was along grain boundary.

1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films

Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N-2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.

Light-induced changes in diphasic nanocrystalline silicon films and solar cells

A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM,wet chemical etching, and TEM experiments show that with a two-step ELOG procedure, the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.

Void swelling in a 9Cr ferritic/martensitic steel irradiated with energetic Ne-ions at elevated temperatures

In this work the void swelling behavior of a 9Cr ferritic/martensitic steel irradiated with energetic Ne-ions is studied. Specimens of Grade 92 steel (a 9%Cr ferritic/martensitic steel) were subjected to an irradiation of Ne-20-ions (with 122 MeV) to successively increasing damage levels of 1, 5 and 10 dpa at a damage peak at 440 and 570 degrees C, respectively. And another specimen was irradiated at a temperature ramp condition (high flux condition) with the temperature increasing from 440 up to 630 degrees C during the irradiation. Cross-sectional microstructures were investigated with a transmission electron microscopy (TEM). A high concentration of cavities was observed in the peak damage region in the Grade 92 steel irradiated to 5 dpa, and higher doses. The concentration and mean size of the cavities showed a strong dependence on the dose and irradiation temperature. Enhanced growth of the cavities at the grain boundaries, especially at the grain boundary junctions, was observed. The void swelling behavior in similar 9Cr steels irradiated at different conditions are discussed by using a classic void formation theory. (c) 2008 Elsevier B.V. All rights reserved.

Surface potential images of polycrystalline organic semiconductors obtained by Kelvin probe force microscopy

P-type copper phthalocyanine (CuPc) and n-type hexadecafluorophthalocyanina-tocopper (F16CuPc) polycrystalline films were investigated by Kelvin probe force microscopy (KPFM). Topographic and corresponding surface potential images are obtained simultaneously. Surface potential images are related with the local work function of crystalline facets and potential barriers at the grain boundaries (GBs) in organic semiconductors. Based on the spatial distribution of surface potential at GBs, donor- and acceptor-like trapping states in the grain boundaries (GBs) of p-CuPc and n-F16CuPc films are confirmed respectively.

Effect of substituting cerium-rich mischmetal with lanthanum on microstructure and mechanical properties of die-cast Mg-Al-RE alloys

Die-cast Mg-4Al-4RE-0.4Mn (RE = Ce-rich mischmetal) and Mg-4Al-4La-0.4Mn magnesium alloys were prepared successfully and their microstructure, tensile and creep properties have been investigated. The results show that two binary Al-RE phases, Al11RE3 and Al2RE, are formed along grain boundaries in Mg-4Al-4RE-0.4Mn alloy, while the phase compositions of Mg-4Al-4La-0.4Mn alloy mainly consist of alpha-Mg phase and Al11La3 phase. And in Mg-4Al-4La-0.4Mn alloy the Al11La3 phase occupies a large grain boundary area and grows with complicated morphologies, which is characterized by scanning electron microscopy in detail. Changing the rare earth content of the alloy from Ce-rich mischmetal to lanthanum gives a further improvement in the tensile and creep properties, and the later could be attributed to the better thermal stability of Al11La3 phase in Mg-4Al-4La-0.4Mn alloy than that of Al11RE3 phase in Mg-4Al-4RE-0.4Mn alloy.

Microstructures, mechanical properties and corrosion behavior of high-pressure die-cast Mg-4Al-0.4Mn-xPr (x=1, 2, 4, 6) alloys

Mg-4Al-0.4Mn-xPr (x = 1, 2, 4 and 6 wt.%) magnesium alloys were prepared successfully by the high-pressure die-casting technique. The microstructures, mechanical properties, corrosion behavior as well as strengthening mechanism were investigated. The die-cast alloys were mainly composed of small equiaxed dendrites and the matrix. The fine rigid skin region was related to the high cooling rate and the aggregation of alloying elements, such as Pr. With the Pr content increasing, the alpha-Mg grain sizes were reduced gradually and the amounts of the Al2Pr phase and All, Pr-3 phase which mainly concentrated along the grain boundaries were increased and the relative volume ratio of above two phases was changed. Considering the performance-price ratio, the Pr content added around 4 wt.% was suitable to obtain the optimal mechanical properties which can keep well until 200 degrees C as well as good corrosion resistance. The outstanding mechanical properties were mainly attributed to the rigid casting surface layer, grain refinement, grain boundary strengthening obtained by an amount of precipitates as well as solid solution strengthening.

Microstructure, tensile properties, and creep behavior of high-pressure die-cast Mg-4Al-4RE-0.4Mn (RE = La, Ce) alloys

High-pressure die-cast (HPDC) Mg-4Al-4RE-0.4Mn (RE = La, Ce) magnesium alloys were prepared and their microstructures, tensile properties, and creep behavior have been investigated in detail. The results show that two binary Al-Ce phases, Al11Ce3 and Al2Ce, are formed mainly along grain boundaries in Mg-4Al-4Ce-0.4Mn alloy, while the phase composition of Mg-4Al-4La-0.4Mn alloy contains only alpha-Mg and Al11La3. The Al11La3 phase comprises large coverage of the grain boundary region and complicated morphologies. Compared with Al11Ce3 phase, the higher volume fraction and better thermal stability of Al11La3 have resulted in better-fortified grain boundaries of the Mg-4Al-4La-0.4Mn alloy. Thus higher tensile strength and creep resistance could be obtained in Mg-4Al-4La-0.4Mn alloy in comparison with that of Mg-4Al-4Ce-0.4Mn. Results of the theoretical calculation that the stability of Al11La3 is the highest among four Al-RE intermetallic compounds supports the experimental results further.

The microstructure and mechanical properties of Mg-8Zn-8Al-4RE magnesium alloy

The Mg-8Zn-8Al-4RE (RE = mischmetal, mass%) magnesium alloy was prepared by using casting method. The microstructure and mechanical properties of as-cast alloy, solid solution alloy and aged alloy samples have been investigated. Optical microscopy, X-ray diffractometery and scanning electron microscope attached energy spectrometer were used to characterize the microstructure and phase composition for the alloy. Net shaped tau-Mg-32(Al,Zn)(49) phase was obtained at the grain boundary, and needle-like or blocky Al11RE3 phase disperses in grain boundary and alpha-Mg matrix. The tau-Mg-32(Al,Zn)(49) phase disappeared during solution treatment and a new phase of Al(2)CeZn2 formed during subsequent age treatment. The mechanical properties were performed by universal testing machine at room temperature, 150 degrees C and 200 degrees C, separately. The ultimate tensile strength of as-cast alloy is lower compared to an age treatment alloy at 200 degrees C for 12h. The strengths decreased with enhancing test temperature, but elongation has not been effect by age treatment.

Structure and electrical properties of Pr ans Sm doped CeO2 and Ce2MoO15 based solid electrolytes

Sin and Pr doped CeO2 and Ce6MoO15 based materials were synthesized by sol-gel method. The structure of the powders were characterized by X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy(FE-SEM) and the electrical conductivity of the samples was investigated by AC impedance spectroscopy. By comparing the structure and electrical properties of different systems, it could be concluded that the electrical property of Ce6MoO15 based system is better than that of CeO2 system. The added Mo element resulted in the increase of gain size and improved the grain boundary conductivity notably below 600 degrees C, while the Pr dopant induced the smaller grain size and improved the grain boundary conductivity of the materials.