飞秒激光用多层介质膜脉宽压缩光栅的设计

以薄膜光学的干涉理论和衍射光学的傅里叶模式理论为基础，给出了0．8μm飞秒激光器用多层介质膜脉宽压缩光栅的理论设计；设计采用H3L（HL）^9H0．5L2．4H的多层介质膜为基底，当刻蚀后表面浮雕结构的占宽比为0．35，线密度为1480线／mm，槽深为0．2μm，顶层HfO2的剩余厚度为0．15μm时，对于Littrow角度（36．7°）和TE波模式入射的衍射光栅其-1级衍射效率达到95％以上．

Design and fabrication of color filters for projection display system

Color filters are key components in an optical engine projection display system. In this paper, a new admittance-matching method for designing and fabricating the high performance filters is described, in which the optimized layers are limited to the interfaces between the stack (each combination of quarter-wave-optical-thickness film layers is called a stack) and stack, or between stack and substrate, or between stack and incident medium. This method works well in designing filters containing multiple stacks such as UV-IR cut and broadband filters. The tolerance and angle sensitivity for the designed film stacks are analyzed. The thermal stability of the sample color filters was measured. A good result in optical performance and thermal stability was obtained through the new design approach. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

光学薄膜中界面层和表面吸附层对相位延迟的影响

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移．根据空气与膜层、膜层之间的实际情况，建立了界面层和表面吸附层模型，并运用它分析相位延迟产生误差的原因．通过优化设计，入射角为54°，在1285～1345nm之间p，s波获得了270±1°的相移，同时也使反射率在99．5％以上．用离子束溅射技术制备相位延迟膜，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性，在相应波段获得了262．4±1．8°的相移，同时也使反射率在99．6％以上．误差的主要来源是离子源工作特性会产生不均匀的过渡层和最

反射式相位延迟器的性能研究

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移。通过优化设计，入射角为45°，在1285～1345nm之间p，s波获得了270°±0．15°的相移和99．5％以上的反射率。对使用的膜系进行了每层光学厚度的误差分析。用离子柬溅射技术制备相位延迟膜，在大气中对样品进行不同温度的退火，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性。结果表明，未退火的样品在相应波段获得了267．5°±0．5°的相移和99．6％以上的反射率；根据拟合分析，最外层的误差和折射率与设计值的偏差是发生相移偏小的

Mechanism initiated by nanoabsorber for UV nanosecond-pulse-driven damage of dielectric coatings

A model of plasma formation induced by UV nanosecond pulselaser interaction with SiO2 thin film based on nanoabsorber is proposed. The model considers the temperature dependence of band gap. The numerical results show that during the process of nanosecond pulsed-laser interaction with SiO2 thin film, foreign inclusion which absorbs a fraction of incident radiation heats the surrounding host material through heat conduction causing the decrease of the band gap and consequently, the transformation of the initial transparent matrix into an absorptive medium around the inclusion, thus facilitates optical damage. Qualitative comparison with experiments is also provided. (C) 2008 Optical Society of America.

Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy

MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of MgO/AlN heterostructures. A value of Delta E-v=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.

Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil

We report on improved electrical properties of lead zirconate titanate (PZT) film deposited on titanium metal foil using nitrogen annealing. After nitrogen annealing of the PZT capacitors, symmetric capacitance-voltage (C-V) characteristics, higher dielectric constant and breakdown field, less change of dielectric constant with frequency, lower dielectric loss and leakage current are obtained. (C) 2003 Elsevier B.V. All rights reserved.

(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit

(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. (C) 2003 Elsevier B.V. All rights reserved.

Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD

The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).

Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film

Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.

Dielectric relaxation of poled polymer DCNP/PMMA

We have prepared the polymer thin films of a 3-(1,1-dicyanothenyl)-1-phenyl-4,5-dihydro-1H-pyrazole (DChTP)/poly (methyl methacrylate) (PMMA) guest-host system by spin coating. In order to investigate their temporal and temperature stability, we have measured their dielectric relaxation spectra including the frequency dependence of the real and imaginary parts of dielectric constants. The investigated frequency ranged from 50 Hz to 10 MHz. The measured temperature range above the glass transition temperature T-g (95 degrees C) of the DCNP/PMMA system was from 95 degrees C to 1250C. By using the Adam-Gibbs model, the temperature dependence of the characteristic time tau above T-g was fitted, and the values of the characteristic times tau below T-g were estimated. The lifetimes of the polymer were evaluated by the Kohlrausch-Williams Watts (KWW) empirical decay model. (C) 2000 Elsevier Science B.V. All rights reserved.

Electro-optical properties and temporal stability of the guest-host DCNP/PEK-c polymer thin film

The polyetherketone (PEK-c) guest-host system thin films in which the range of the weight percent of 3-(1,1-dicyanothenyl)-1-phenyl-4, 5- dihydro-1H-pryazole (DCNP) is from 20% to 50% were prepared. The predicted high value of electro-optical (EO) coefficient gamma(33) = 48.8 pm/V by using two-level model was obtained when the weight percent of DCNP in the polymer system is 40%, whereas EO coefficients are attenuated at higher chromophore loading then 40%. The temporal stability of the EO activity of the guest-host polymer was evaluated by probing the decay of the orientational order of the chromophores in the polymer system.

Liquid nitrogen flowrate alarm system for MBE

Liquid nitrogen is very important for MBE system. Most MBE systems use the liquid nitrogen to absorb the impurity molecules. If MBE cryoshroud is lack of liquid nitrogen, the pressure of the growth chamber will grow. This will affect the film quality. But too much liquid nitrogen is a waste. We have developed a liquid nitrogen flowrate alarm system to monitor the liquid nitrogen status in MBE cryoshroud. In this method, a temperature sensor is placed at the end of the cryoshroud. The temperature varies with changing of the liquid nitrogen status in cryoshroud. If the liquid nitrogen level in the cryoshroud is too low or too high, the LNFA will send out an alarm to warn the user to adjust the liquid nitrogen flowrate. In our experiments, we found this method works well, and the temperature responds sensitively. With the help of this system, people can view the liquid nitrogen status of the entire growth process. Compare with other method. it is very cheap.

Methane hydrate growth velocity in seepage system of Qiongdongnan Basin, South China Sea

The occurrences of diapirs, gas-filled zones and gas plumes in seawater in Qiongdongnan Basin of South China Sea indicate that there may exist seepage system gas-hydrate reservoirs. Assuming there has a methane venting zone of 1500 m in diameter, and the methane flux is 1000 kmol/a, and the temperature of methane hydrate-bearing sediments ranges from 3 degrees C to 20 degrees C, then according to the hydrate film growth theory, by numerical simulation, this paper computes the temperatures and velocities in 0 mbsf, 100 mbsf, 200 mbsf, 425 mbsf over discrete length, and gives the change charts. The results show that the cementation velocity in sediments matrix of methane hydrate is about 0.2 nm/s, and the seepage system will evolve into diffusion system over probably 35000 years. Meanwhile, the methane hydrate growth velocity in leakage system is 20 similar to 40 times faster than in diffusion system.

Wavelength multiplexing and tuning in nano-Ag/dielectric multilayers

Multicolored optical active planes have been fabricated with magnetron sputter method coupled with selective masking technique. The plane is multilayer structured with Ag nanoparticles and TiO2 thin layer as the building blocks. It was found that the formed multilayer can be readily wavelength multiplexed by simply overlapping several nano-Ag/TiO2 layered structures, each of which may have different surface plasmon resonance wavelength. Unlike high order multiple resonances of large particles each of the multiplexing wavelengths in such a system is separately tunable. Importantly, it reveals that modification of the TiO2 layer thickness generates a fine tuning of the resonance wavelength.