Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps. (c) 2005 Elsevier Ltd. All rights reserved.

Theoretical and experimental study on femtosecond laser induced damage in CaF2 crystals

We report on the damage threshold in CaF2 crystals induced by femtosecond laser at wavelengths of 800 nm and 400 nm, respectively. The dependences of ablation depths and ablation volumes on laser fluences are also presented. We investigate theoretically the coupling constants between phonon and conduction band electrons (CBE), and calculate the rates of CBE absorbing laser energy. A theoretical model including CBE production, laser energy deposition, and CBE diffusion is applied to study the damage mechanisms. Our results indicate that energy diffusion greatly influences damage threshold and ablation depth.

The ultrafast excitation processes in femtosecond laser-induced damage in dielectric omnidirectional reflectors

A pump and probe system is developed, where the probe pulse duration tau is less than 60 fs while the pump pulse is stretched up to 150-670 fs. The time-resolved excitation processes and damage mechanisms in the omnidirectional reflectors SiO2/TiO2 and ZnS/MgF2 are studied. It is found that as the pump pulse energy is higher than the threshold value, the reflectivity of the probe pulse decreases rapidly during the former half, rather than around the peak of the pump pulse. A coupled dynamic model based on the avalanche ionization (AI) theory is used to study the excitation processes in the sample and its inverse influences on the pump pulse. The results indicate that as pulse duration is longer than 150 fs, photoionization (PI) and AI both play important roles in the generation of conduction band electrons (CBEs); the CBE density generated via AI is higher than that via PI by a factor of 10(2)-10(4). The theory explains well the experimental results about the ultrafast excitation processes and the threshold fluences. (c) 2006 American Institute of Physics.

Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF2 crystals

The damage in fused silica and CaF2 crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength lambda in the region of 250-800 nm, while it is nearly a constant for 800 conduction band electrons (CBEs). We study the CBEs absorption via subconduction-band (sub-CB) transition, and develop a coupled avalanche model. Our results indicate that the CBEs absorption via sub-CB transition plays an important role in the damage in dielectrics irradiated by the visible and near ultraviolet femtosecond lasers. Our theory explains well the experiments.

Conical emission of Ti : sapphire femtosecond laser pulses propagating in water

Conical emission is investigated for Ti:sapphire femtosecond laser pulses propagating in water. The colored rings can be observed in the forward direction due to the constructive and destructive interference of transverse wavevector, which are induced by the spatio-temporal gradient of the free-electron density. With increasing input laser energy, due to filamentation and pulse splitting induced by the plasma created by multiphoton excitation of electrons from the valence band to the conduction band, the on-axis spectrum of the conical emission is widely broadened and strongly modulated with respect to input laser spectrum, and finally remains fairly constant at higher laser energy due to intensity clamping in the filaments.

Intensity-modulating characteristics of a laser diode subjected to optical injection

We have found that the optical power of a laser diode (LD) does not change with the injected light intensity that is modulated when its injection current is at some specific values. The amplitude of optical power change of the LD varies periodically with the increase of the injection current. It is made clear through theoretical analysis that these phenomena are caused by gain compression and interband carrier absorption of the LD that depend on longitudinal mode competition, bandgap-shrinkage effects, thermal conduction, and so on. Our experimental results make it easy to eliminate optical power change of LDs. We only need to choose a proper value of the injection current. (c) 2005 Optical Society of America.

利用二维光谱色散和透镜列阵改善靶面辐照均匀性

利用二维光谱色散平滑技术和透镜列阵(LA)来改善激光驱动器中靶面的辐照均匀性。通过消衍射透镜列阵可得到包络陡峭且中小空间尺度均匀性较好的焦斑。当在光路中加入二维光谱色散平滑单元后,光束在两个互相垂直的方向发生光谱色散,多光束干涉所引起的细密条纹也将在很大程度上被抹平,如果把横向热传导平滑效应也考虑在内,高空间频率的强度波动可进一步被消除。二维理论模拟结果表明采用该方案可获得顶部平坦边缘陡峭的焦斑,而且该方案无需仔细调整靶面的位置,实际应用较方便。

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

The dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm(2)/s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm(2)/s, and 0.25 W/m K at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm(2)/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/m K at 440 K. Whether in the crystalline or amorphous state, Ag8In14Sb55Te23 are more thermally active than Ge2Sb2Te5, that is, the Ag8In14Sb55Te23 composites bear stronger thermal conduction and diffusion than the Ge2Sb2Te5 phase-change memory materials.

传导冷却的全固态zigzag板条激光器

报道了激光二极管泵浦的被动传导冷却的Q开关Nd:YAG zigzag 板条激光器，谐振腔采用平平腔和非稳腔。在20Hz运转时，得到脉宽均为10ns的150 mJ，光光效率19%的多模输出和100 mJ、13%光学效率的单模输出，并进行了相关的热效应测试，结果表明该激光器具有效率高、结构紧凑、光束质量好，在空间环境应用具有很好的发展潜力。

锯齿形板条抽运结构的热效应数值比较

激光二极管抽运的全固态激光器中,除了激光介质的温度分布和热透镜效应以外,抽运、冷却结构对获得高光束质量、高功率激光输出至关重要。基于热传导方程,在相同的抽运功率和传导冷却边界条件下,对单侧面抽运锯齿形(zigzag)板条、单侧面键合锯齿形板条、部分抽运板条三种不同抽运结构的温度分布、热致应力、温度导致的折射率变化进行了详细的分析,并通过光线追迹方法,比较了光束在锯齿形面内和垂直于锯齿形面内的光程差,由光程差曲线分析了激光束的热透镜效应。对三种抽运结构的端面温度、端面变形和端面变形导致的光程差也进行了对比分

Photoluminescence of undoped and B-doped ZnO in silicate glasses

Photoluminescence of undoped and B-doped ZnO in silicate glasses was investigated by varying the concentration of ZnO (3550 mol%) and B dopant (0-10 mol%) in the glass matrices. The broad and intense near band edge emissions were observed while the visible light emission was very weak. UV luminescence in all samples was red-shifted relative to the exciton transition in bulk ZnO and enhanced by decreased ZnO concentration due to higher degree of structural integrity and the lower aggregation degree of ZnO. Donor B dopant played the double roles of filling conduction bands to broaden band gap when its concentration was lower than 5 mol%, and emerging with conduction bands to narrow the gap when B dopant exceeded this value. (c) 2007 Elsevier B.V. All rights reserved.

脉冲激光辐照光学薄膜的缺陷损伤模型

建立了缺陷吸收升温致薄膜激光损伤模型，该模型从热传导方程出发，考虑了缺陷内部的温度分布以及向薄膜的传导过程，通过引入散射系数简化了Mie散射理论得出的吸收截面．对电子束蒸发沉积的ZrO2：Y2O3单层膜进行了激光破坏实验，薄膜样品的损伤是缺陷引起的，通过辉光放电质谱法对薄膜制备材料的纯度分析发现材料中的主要杂质元素为铂，其含量为0．9％．利用缺陷损伤模型对损伤过程进行了模拟，理论模型和实验结果取得了较好的一致性．

Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings

Two kinds of HfO2/SiO2 800 nm high-reflective (HR) coatings, with and without SiO2 protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO2 protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO2 protective layer for HfO2/SiO2 HR coating with SiO2 protective layer. The relation of LIDT for two kinds of HfO2/SiO2 HR coatings in calculation agrees with the experiment result. (c) 2006 Elsevier B.V. All rights reserved.

单脉冲飞秒脉冲激光对单层和高反光学薄膜的损伤

用电子柬蒸发的方法在BK7玻璃上制备了ZrO2单层膜和ZrO2／SiO2高反膜，利用掺Ti：sapphire飞秒激光系统输出的中心波长为800nm，脉宽为50fs的激光脉冲对这两种样品进行了激光损伤阈值测试．实验结果表明，ZrO2单层膜的阂值比ZrO2／SiO2高反膜的高；这与传统的纳秒脉冲激光的损伤情况相反．利用光离化和碰撞离化激发电子到导带，形成电子等离子体基本模型并对此现象进行了解释．同时，用显微镜对样品的损伤形貌进行了观测，对损伤的特点进行了表征．

Mechanism initiated by nanoabsorber for UV nanosecond-pulse-driven damage of dielectric coatings

A model of plasma formation induced by UV nanosecond pulselaser interaction with SiO2 thin film based on nanoabsorber is proposed. The model considers the temperature dependence of band gap. The numerical results show that during the process of nanosecond pulsed-laser interaction with SiO2 thin film, foreign inclusion which absorbs a fraction of incident radiation heats the surrounding host material through heat conduction causing the decrease of the band gap and consequently, the transformation of the initial transparent matrix into an absorptive medium around the inclusion, thus facilitates optical damage. Qualitative comparison with experiments is also provided. (C) 2008 Optical Society of America.