Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I

Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density Of 10(16)-10(17)cm(-3). It has a slight increase after 900 degrees C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition

Quality ZnO films were successfully grown on Si(100) substrate by low-pressure metal organic chemical vapor deposition method in temperature range of 300-500 degrees C using DEZn and N2O as precursor and oxygen source respectively. The crystal structure, optical properties and surface morphology of ZnO films were characterized by X-ray diffraction, optical refection and atomic force microscopy technologies. It was demonstrated that the crystalline structure and surface morphology of ZnO films strongly depend on the growth temperature.

Donor defect in P-diffused bulk ZnO single crystal

A high concentration of shallow donor defect is formed in P-diffused ZnO single crystals. X-ray photoelectron spectroscopy analysis indicates that P atom occupy different lattice site at different diffusion temperature. Nature of the donor defect has been discussed.

Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO

Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

改进的SILAR法制备ZnO薄膜及其表征

A modified solution method, successive ionic layer adsorption and reaction(SILAR), was applied to prepare transparent zinc oxide(ZnO) film on glass substrate at (125±5) ℃ in mixed ion precursor solution. The surface morphology and crystallizations of films were analyzed by field emission scanning microscopy(FESEM) and X-ray diffraction(XRD), respectively. The optical properties of the films were studied by ultraviolet visible(UV-Vis)spectroscopy. The results show that the obtained samples are polycrystallin...中文文摘：采用一种改进的液相成膜技术——连续离子层吸附与反应(SILAR)法,用锌氨络离子[Zn(NH3)4]2+溶液作为独立的前驱体溶液,以载玻片为衬底,在(125±5)℃的温度下沉积出致密、透明的ZnO薄膜。分别用冷场发射型扫描电镜(FESEM)和X射线衍射(XRD)分析了薄膜样品的表面形貌和结晶状态,用紫外-可见分光光度计(UV-Vis spectroscopy)研究了薄膜样品的发光性能。结果表明:获得样品为六角纤锌矿结构的多晶薄膜材料沿[002]方向择优生长;样品表面均匀、致密,厚度约为550nm;在可见光波段具有高的透射率(>80%)。

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400 degrees C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.

Effect of substrate and annealing on the structural and optical properties of ZnO:Al films

ZnO:Al thin films with c-axis preferred orientation were deposited on glass and Si substrates using RF magnetron sputtering technique. The effect of substrate on the structural and optical properties of ZnO:Al films were investigated. The results showed a strong blue peak from glass-substrate ZnO:Al film whose intensity became weak when deposited on Si substrate. However, the full width at half maxima (FWHM) of the Si-substrate ZnO:Al (0 0 2) peaks decreased evidently and the grain size increased. Finally, we discussed the influence of annealing temperature on the structural and optical properties of Si-substrate ZnO:Al films. After annealing, the crystal quality of Si-substrate ZnO:Al thin films was markedly improved and the intensity of blue peak (similar to 445 nm) increased noticeably. This observation may indicate that the visible emission properties of the ZnO:Al films are dependent more on the film crystallinity than on the film stoichiometry. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Two-dimensional beta-NaLuF4 hexagonal microplates

A simple hydrothermal method has been developed to synthesize monodisperse beta-NaLuF4 microplates in a large scale. The microcrystals have a perfect hexagonal shape with a diameter of about 5.2 mu m and a thickness of 300 nm. Trisodium citrate (Cit(3-)), which is introduced into the reaction mixture and acts as the chelating agent and shape modifier, plays a key role in fine-tuning the microstructures. The dominant adsorption of Cit(3-) onto the {0001} facets lowers the surface energy of these facets.

Size-controlled synthesis and characterization of quantum-size SnO2 nanocrystallites by a solvothermal route

By using ethylenediamine as both an alkali and ligand, quantum size SnO2, nanocrystallites were synthesized with a solvothermal route. The transmission electron micrographs (TEM) were employed to characterize the morphologies of the products. The crystal sizes of the as-synthesized SnO2 were ranged form 2.5 to 3.6 nm. The crystal structure and optical properties of the products were investigated by X-ray diffraction, Fourier transform infrared spectroscopy, optical absorption spectra, photoluminescence and Raman spectra.

Effects of ammonia and cetyltrimethylammonium bromide (CTAB) on morphologies of ZnO nano- and micromaterials under solvothermal process

Submicrometer zinc oxide (ZnO) with different morphologies including spindle-like, pencil-like, branch rod-like and frizzy flower-like shapes, have been hydrothermally synthesized in mixed solvents of ethanol and water at 140 degrees C. It was found that the volumes of added ammonia, surfactant (cetyltrimethylammonium bromide, CTAB), and mixed solvent play crucial roles in morphological control of ZnO nanostructures. Increasing the volume of ammonia added to the reaction system, the shape of ZnO evolves from spindle into branch rod-like. Synergetic influence between CTAB and ammonia can only be observed at high concentration of ammonia.

Biofilm-Engineered Nanostructures

The use of biofilms as nanostructure-engineering materials is discussed and exemplified using ZnO nanorods. Three examples are presented for illustration, the immobilization of ZnO-nanorod arrays on the inner wall of a polystyrene centrifuge tube using S. thermophilus, the morphological organization of ZnO "filters" using S. thermophilus. And the design and implementation of a ZnO-decorated Ag framework using E. coli.

LaF3, CeF3, CeF3 : Tb3+, and CeF3 : Tb3+@LaF3 (core-shell) nanoplates: Hydrothermal synthesis and luminescence properties

LaF3. CeF3, CeF3:Tb3+, and CeF3:Tb3+ @LaF3 (core-shell) 2D nanoplates have been successfully synthesized by a facile and effective hydrothermal process. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectra as well as kinetic decays were used to characterize the samples. The experimental results indicate that the organic additive, trisodium citrate (Cit(3-)), as a shape modifier has the dynamic effect by adjusting the growth rate of different crystal facets, resulting in forming the anisotropic geometries of the final products. The possible formation mechanisms for different products have been presented. The CeF3, CeF3:Tb3+, and CeF3:Tb3+ @LaF3 (core/shell) nanoplates show characteristic emission of Ce3+ (5d-4f) and Tb3+ (f-f), respectively.