The effect of thermal-activation on dislocation processes at an atomistic crack-tip

The effects of thermal activation on the dislocation emission from an atomistic crack tip are discussed, Molecular dynamics simulations at different constant temperatures are carried out to investigate the thermal effects. The simulated results show that the processes of the partial dislocation generation and emission are temperature dependent. As the temperature increases, the incipient duration of the partial dislocation nucleation becomes longer, the critical stress intensity factor for partial dislocation emission is reduced and, at the same loading level, more dislocations are emitted. The dislocation velocity moving away from the crack tip and the separations of partial dislocations are apparently not temperature dependent. The simulated results also show that, as the temperature increases, the stress distribution along the crack increases slightly. Therefore stress softening at the crack tip induced by thermal activation does not exist in the present simulation. A simple model is proposed to evaluate the relation of the critical stress intensity factor versus temperature. The obtained relation is in good agreement with our molecular dynamics results.

Two-time scales inner solutions and motion of a geostrophic vortex

Based on the authors' previous work, in this paper the systematical analyses on the motion and the inner solutions of a geostrophic vortex have been presented by means of thematched asymptotic expansion method with multiple time scales (S/gh001/2 and α S/gh001/2) and space scales. It has been shown that the leading inner solutions to the core structure in two-time scales analyses are identified with the results in normal one-time scale analyses. The time averages of the first-order solutions on short time variable τ are the same as the first-order solutions obtained in one normal time scale analyses. The geostrophic vortex induces an oscillatory motion in addition to moving with the background flow. The period, amplitude andthe deviation from the mean trajectory depend on the core structure and the initial conditions. The velocity of the motion of vortex center varies periodically and the time average of the velocity on short time variable τ is equal to the value of the local mean velocity.

The motion and the core structure of a geostrophic vortex - one-time scale inner solution and the motion of the vortex

By means of the matched asymptotic expansion method with one-time scale analysis we have shown that the inviscid geostrophic vortex solution represents our leading solution away from the vortex. Near the vortex there is a viscous core structure, with the length scale O(a). In the core the viscous stresses (or turbulent stresses) are important, the variations of the velocity and the equivalent height are finite and dependent of time. It also has been shown that the leading inner solutions of the core structure are the same for two different time scales of S/(ghoo)1/2 and S/a (ghoo)1/2. Within the accuracy of O(a) the velocity of a geostrophic vortex center is equal to the velocity of the local background flow, where the vortex is located, in the absence of the vortex. Some numerical examples demonstrate the contributions of these results.

Analysis of Kic and its temperature dependence of metals by a simplified dislocation model

The relative Kic values of metals are calculated with a simplified dislocation model. It is found that the ratio of KIIc to KIc and the temperature dependence of fracture toughness of some metals estimated with this model are consistent with the experimental results.

Vortex motion in the early stages of unsteady flow around a circular cylinder

In this paper, processes in the early stages of vortex motion and the development of flow structure behind an impulsively-started circular cylinder at high Reynolds number are investigated by combining the discrete vortex model with boundary layer theory, considering the separation of incoming flow boundary layer and rear shear layer in the recirculating flow region. The development of flow structure and vortex motion, particularly the formation and development of secondary vortex and a pair of secondary vortices and their effect on the flow field are calculated. The results clearly show that the flow structure and vortices motion went through a series of complicated processes before the symmetric main vortices change into asymmetric: development of main vortices induces secondary vortices; growth of the secondary vortices causes the main vortex sheets to break off and causes the symmetric main vortices to become “free” vortices, while a pair of secondary vortices is formed; then the vortex sheets, after breaking off, gradually extend downstream and the structure of a pair of secondary vortices becomes relaxed. These features of vortex motion look very much like the observed features in some available flow field visualizations. The action of the secondary vortices causes the main vortex sheets to break off and converts the main vortices into free vortices. This should be the immediate cause leading to the instability of the motion of the symmetric main vortices. The flow field structure such as the separation position of boundary layer and rear shear layer, the unsteady pressure distributions and the drag coefficient are calculated. Comparison with other results or experiments is also made.

Simulation of Vortex-dominant and Turbulent Flows in Natural Environment

In the present talk, the simulation of vortex dominant and turbulent flows are primarily addressed. To cope with complicated circumstances in environmental flows we illustrate the strategy of combining simplified physical model and suitable algorithm by a few examples.

A new method to analyse the Peierls-Nabarro model of an edge dislocation in a rectangular plate

A new method is presented here to analyse the Peierls-Nabarro model of an edge dislocation in a rectangular plate. The analysis is based on the superposition scheme and series expansions of complex potentials. The stress field and dislocation density field on the slip plane can be expressed as the first and the second Chebyshev polynomial series respectively. Two sets of governing equations are obtained on the slip plane and outer boundary of the rectangular plate respectively. Three numerical methods are used to solve the governing equations.

Nonlinear Fluid Damping In Structure-Wake Oscillators In Modeling Vortex-Induced Vibrations

A Nonlinear Fluid Damping (NFD) in the form of the square-velocity is applied in the response analysis of Vortex-induced Vibrations (VIV). Its nonlinear hydrodynamic effects oil the coupled wake and structure oscillators are investigated. A comparison between the coupled systems with the linear and nonlinear fluid dampings and experiments shows that the NFD model can well describe response characteristics, such as the amplification of body displacement at lock-in and frequency lock-ill, both at high and low mass ratios. Particularly, the predicted peak amplitude of the body in the Griffin plot is ill good agreement with experimental data and empirical equation, indicating the significant effect of the NFD on the structure motion.

Two-dimensional Vortex-induced Vibrations of Submerged Floating Tunnel Tethers

A vortex-induced vibration (VIV) model is presented for predicting the nonlinear dynamic response of submerged floating tunnel (SFT) tethers which are subjected to wave, current and tunnel oscillatory displacements at their upper end in horizontal and vertical directions. A nonlinear fluid force formula is introduced in this model, and the effect of the nonlinearity of tether is investigated. First, the tunnel is stationary and the tether vibrates due to the vortices shedding. The calculated results show that the cross-flow amplitude of VIV decreases compared with the linear model. However the in-line amplitude of VIV increases. Next, the periodical oscillation of tunnel is considered. The oscillation caused by wave forces plays the roles of parametric exciter and forcing exciter to the VIV of tether. The time history of displacement of the tether mid-span is obtained by the proposed model. It is shown that the in-line amplitude increases obviously and the corresponding frequency is changed. The cross-flow amplitude exhibits a periodic behavior.

Experimental Study Of Vortex-Induced Vibrations Of A Cylinder Near A Rigid Plane Boundary In Steady Flow

In this study, the vortex-induced vibrations of a cylinder near a rigid plane boundary in a steady flow are studied experimentally. The phenomenon of vortex-induced vibrations of the cylinder near the rigid plane boundary is reproduced in the flume. The vortex shedding frequency and mode are also measured by the methods of hot film velocimeter and hydrogen bubbles. A parametric study is carried out to investigate the influences of reduced velocity, gap-to-diameter ratio, stability parameter and mass ratio on the amplitude and frequency responses of the cylinder. Experimental results indicate: (1) the Strouhal number (St) is around 0.2 for the stationary cylinder near a plane boundary in the sub-critical flow regime; (2) with increasing gap-to-diameter ratio (e (0)/D), the amplitude ratio (A/D) gets larger but frequency ratio (f/f (n) ) has a slight variation for the case of larger values of e (0)/D (e (0)/D > 0.66 in this study); (3) there is a clear difference of amplitude and frequency responses of the cylinder between the larger gap-to-diameter ratios (e (0)/D > 0.66) and the smaller ones (e (0)/D < 0.3); (4) the vibration of the cylinder is easier to occur and the range of vibration in terms of V (r) number becomes more extensive with decrease of the stability parameter, but the frequency response is affected slightly by the stability parameter; (5) with decreasing mass ratio, the width of the lock-in ranges in terms of V (r) and the frequency ratio (f/f (n) ) become larger.

Dislocation scattering in AlxGa1-xN/GaN heterostructures

The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of AlxGa1-xN/GaN heterostructures was calculated. Based on the model of treating dislocation as a charged line, an exponentially varied potential was adopted to calculate the mobility. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data, and we obtained a good fitting between the calculated and experimental results. It was found that the measured mobility is dominated by interface roughness and dislocation scattering at low temperatures if dislocation density is relatively high (>10(9) cm(-2)), and accounts for the nearly flattening-out behavior with increasing temperature.

Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells

Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of InGaN multiple quantum wells (MQWs) are investigated. It is found that the EL intensity increases with the number of satellite peaks in the x-ray diffraction experiments of InGaN MQW samples. It is indicated that the rough interface will lead the reduction of EL intensity of InGaN MQW samples. It is also found that the EL intensity increases with the decrease of dislocation density which is characterized by the x-ray diffraction measurements. It is suggested that the EL intensity of InGaN MQWs can be improved by decreasing the interface roughness and dislocation density.

Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (I-BL/I-YL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the I-BL/I-YL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence.

Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD

InN thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. Based on the model of mosaic crystal, by means of X-ray diffraction skew geometry scan, the edge dislocation densities of 4.2 x 10(10) cm(-2) and 6.3 x 10(10) cm(-2) are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. The carrier concentrations of 9 x 10(18) cm(-3) and 1.2 x 10(18) cm(-3) are obtained by room temperature Hall effect measurement. V-N is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. By the analysis of S-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. Taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05 meV and 5.58 meV for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.

Dislocation core effect scattering in a quasitriangle potential well

A theory of scattering by charged dislocation lines in a quasitriangle potential well of AlxGa1-xN/GaN heterostructures is developed. The dependence of mobility on carrier sheet density and dislocation density is obtained. The results are compared with those obtained from a perfect two-dimensional electron gas and the reason for discrepancy is given.