Dislocation core effect scattering in a quasitriangle potential well

A theory of scattering by charged dislocation lines in a quasitriangle potential well of AlxGa1-xN/GaN heterostructures is developed. The dependence of mobility on carrier sheet density and dislocation density is obtained. The results are compared with those obtained from a perfect two-dimensional electron gas and the reason for discrepancy is given.

National Science Foundation of China 60506002 60776015the Special Funds for Major State Basic Research Project (973 program) of China 2006CB604907 863 High Technology R&D Program of China 2007AA03Z402 2007AA03Z451 This work was supported by National Science Foundation of China (Grant Nos. 60506002 and 60776015), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451).