Raman spectroscopy and luminescent properties of ZnO nanostructures fabricated by femtosecond laser pulses

In this paper, we report the laser-induced periodic structure with different spatial characteristics on the surface of polished ZnO single-crystalline by high repetition rate femtosecond laser pulses. This study demonstrates that, using different laser parameters and irradiation conditions, ZnO nanoripples and nanorods were successfully prepared. We have investigated the surface by means of scanning electron microscope (SEM), Raman scattering and photoluminescence (PL). We propose that second-order harmonic has a strong influence on the formation of nanostructures. (c) 2007 Elsevier B.V All rights reserved.

Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films

Crystallization in amorphous Ge2Sb2Te5 films by irradiation with femtosecond laser was investigated. The reflectivity and X-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous Ge2Sb2Te5 films under the irradiation of fermosecond laser with an average power of 65 mW at a frequency of 1000 Hz and a pulsed width of 120 fs. The surface morphology before and after femtosecond laser irradiation was studied by scanning electron microscope; results showed that the surface of films with irradiation of femtosecond laser was composed of some the crystallized micro-region. (C) 2004 Elsevier B.V. All rights reserved.

Photoinduced effects in amorphous Ge-Se films

With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphous GeSe2 films; were investigated with the X-ray diffraction (XRD), infrared absorption (IR), scanning electron microscope (SEM), transmitting electron microscope (TEM) and transmittance spectra analysis. It was observed that the optical transmittance edges of films shifted to shorter wavelength according to annealing and light illumination and the shift in well-annealed films could be recovered by annealing at 200 degrees C for 1 h in Ar air. The magnitude of shift increased with the increase of the intensity of illumination light and the illumination time. By sides, photoinduced crystallization was also observed in the exposed regions of GeSe2 films and more of it was observed with stronger intensity of illumination light.

Influence of thermal annealing on optical properties and surface morphology of NiOx thin films

NiOx thin films were deposited by reactive DC-magnetron sputtering from a nickel metal target in Ar + O-2 with the relative O-2 content of 5%. Thermal annealing effects on optical properties and surface morphology of NiOx, films were investigated by X-ray photoelectron spectroscopy, thermogravimetric analysis, scanning electron microscope and optical measurement. The results showed that the changes in optical properties and surface morphology depended on the temperature. The surface morphology of the films changed obviously as the annealing temperature increased due to the reaction NiOx -> NiO + O-2 releasing O-2. The surface morphology change was responsible for the variation of the optical properties of the films. The optical contrast between the as-deposited films and 400 degrees C annealed films was about 52%. In addition, the relationship of the optical energy band gap with the variation of annealing temperature was studied. (c) 2006 Elsevier B.V. All rights reserved.

几种不同产地软玉的岩相结构和无破损成分分析

利用质子激发X射线荧光（PIXE）、X射线衍射（XRD）、扫描电子显微镜（SEM）以及激光拉曼光谱（LRS）技术对几个来自中国新疆、俄罗斯、加拿大和新西兰等地的软玉样品的进行了岩石矿物学特征分析,从成分组成和微观织构方面比较了各地软玉的不同特征.实验结果显示了软玉作为透闪石质玉石,随着Fe2O3含量的增加,逐步向阳起石过渡.中国和田玉以其特有的毛毡状纤维交织结构,形成了均匀细腻、油脂光泽的表面特征.无破损成分分析方法为研究贵重的古玉样品提供了技术支持.

热致NiOx薄膜的结构和光学性质变化

利用直流磁控反应溅射技术制备了氧气和氩气的分压比为5:100的NiOx薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)和光谱仪研究了热处理对薄膜的微观结构和光学性质的影响, 并对沉积态薄膜的粉末进行了热分析。沉积态的NiOx薄膜在262 ℃时开始分解, 导致NiOx薄膜的透过率增加和反射率降低。X射线衍射和示差扫描量热曲线(DSC)分析表明, 在热处理过程中并无物相的变化, 光学性质的变化是由于NiOx薄膜热分解引起薄膜表面形貌发生变化而引起的。通过Kissinger公式计算出

河南南阳独山玉的岩相结构和无损分析(英文)

河南南阳独山玉的开采历史可以追溯到新石器时代,在我国玉文化中占有重要地位。鉴于当前对独山玉进行无损鉴别的方法较少,利用质子激发X荧光技术(proton induced X-ray emission,PIXE)、X射线衍射(X-ray diffraction,XRD)、激光Raman光谱(laser Raman spectroscopy,LRS)和扫描电子显微镜(scanning electron microscope,SEM)等技术对河南南阳独山玉料进行岩石矿物学分析。结果表明:独山玉主要由钙长石矿物构成,晶粒细小且结合紧密的显微结构与独山玉具有极高的稳定性有较大关系。PIXE,XRD和Raman技术作为无损分析方法为鉴定独山玉提供了准确有效的方法,为研究贵重的古玉样品提供了技术支持。

激光热处理对化学沉积Ni-P合金薄膜性能的影响

用扫描电镜(SEM)观察了化学沉积Ni-P合金薄膜/单晶硅基体的结构与颗粒度,利用X射线衍射(XRD)技术测试了其化学沉积后的残余应力,测量了激光热处理后残余应力的变化规律,分析了残余应力对磨损性能及界面结合强度的影响。实验结果表明,化学沉积Ni-P合金薄膜/硅基体的残余应力均表现为拉应力,经过激光热处理后残余应力发生了变化,由高值的拉应力变为低值的拉应力或压应力；薄膜残余应力对其磨损性能有明显的影响,其磨损量随着残余应力的减小而减小；薄膜与基体结合强度随着残余应力的增大而减小,合理地选择激光热处理参数可

Effect of processing parameters on the optical properties of TiO2/ormosil planar waveguide

Hybrid TiO2/ormosil waveguiding films have been prepared by the sol-gel method at low thermal treatment temperature of 150° C. The influence of processing parameters including the molar ratios of titanium butoxide (Ti(OBu)(4))/3-glycidoxypropyltrimethoxysilane (GLYMO) and H2O/Ti(OBu)(4) (expressed as R), especially aging of sot on the optical properties was investigated. The optical properties of films were measured with scanning electron microscope (SEM), UV/VIS/NIR spectrophotometer (UV-Vis), m-line and the scattering-detection method. The results indicate that the film thickness increases with the increase of sol aging time, but the variation of refractive index as a function of sot aging time depends on the relative ratios of GLYMO to Ti(OBu)(4). Higher transmittance and lower attenuation of the planar waveguide can be obtained in the sol with lower Ti(OBu)(4) contents and shorter aging time.

低损耗TiO2/Ormosil平面波导的制备及表征

abstract = {TiO₂/ormosil planar waveguide was prepared by sol-gel method at low thermal treatment temperature ( less than or equal 200°C). Scanning electron microscope, FT-IR spectrometer, spectrophotometer, atomic force microscopy, thermal analyzer, and dark m-line spectroscopy were used with the method of scattering-detection to investigate optical and structural properties. High optical quality waveguide film was obtained. The propagation loss of film was 0.569 dB/cm at a wavelength of 632.8 nm.

Upconversion Luminescence of Er3+-Yb3+ Codoped NaYF4-PVP Electrospun Nanofibers

NaYF4: 0.02Er center dot xYb-PVP composite nanofibers with the diameter of similar to 400 nm have been prepared by electrospinning. Field emission scanning electron microscope and X-ray diffraction have been utilized to characterize morphology and structure of the as-prepared electrospun nanofibers. Their up-conversion luminescence is investigated under a 980-nm excitation. Green (538 and 520 nm), red (6-55 nm), and blue (405 nm) emissions are observed in the up-conversion luminescence spectra, and the intensity of these three emissions changes differently with the variety of Yb content, which has been interpreted successfully in this letter. The color of NaYF4: 0.02Er center dot xYb-PVP nanolibers under a 980-nm excitation can be changed from green --> white --> yellow gradually via changing the Yb content.

Formation of array microstructures on silicon by multibeam interfered ferntosecond laser pulses

We report on an optical interference method to fabricate array microstructures on the surface of silicon wafers by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed microstructures with micrometer-order were fabricated. The diffraction characteristics of the fabricated structures were evaluated. The present technique allows one-step realization of functional optoelectronic devices on silicon surface. (C) 2004 Elsevier B.V. All rights reserved.

Study on the growth, etch morphology and spectra of Y2SiO5 crystal

Undoped Y2SiO5 single crystal was grown by the Czochralski method. The samples were optically polished after orienting and cutting. The rhombus and quadrangular dislocation etching pits, the low-angle grain boundaries and the inclusions in the samples were observed using optical microscope and scanning electron microscope. The absorption spectra were measured before and after H-2 annealing or air annealing. The absorption edge of Y2SiO5 crystal was determined to be about 202 nm. The absorption coefficient of Y2SiO5 crystal decreased after H-2 annealing and obviously increased after air annealing. (C) 2005 Elsevier B.V. All rights reserved.

提拉法Tm：YAG晶体的生长缺陷研究

采用提拉法(CZ)生长了质量优异的Tm：YAG晶体．部分晶片在1000℃的空气气氛中退火25h．借助光学显微镜、扫描电子显微镜(SEM)，结合化学腐蚀法，对Tm：YAG晶体退火前后(111)面的缺陷特征进行了研究．Tm：YAG晶体(111)面的位错腐蚀坑呈三角形．在偏光显微镜下观察了退火前后Tm：YAG晶体(111)面的应力双折射．同时应用高分辨X射线衍射法测定了晶体的完整性．实验结果表明，长时间空气气氛下高温退火有效降低了晶体中总的位错密度，提高了晶体质量．

Formation of arrayed holes on metal foil and metal film by multibeam interfering femtosecond laser beams

We report on an optical interference method to fabricate arrayed holes on metal nickel foil and aluminum film deposited on glass substrate by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed that arrayed holes of micrometre-order were fabricated on both metal foil and metal film. The present technique allows one-step, large-area, micrometric processing of metal materials for potential industrial applications.