Diode-end-pumped passively mode-locked ceramic Nd : YAG Laser with a semiconductor saturable mirror

We report on a diode- pumped CW passively mode locked ceramic Nd: YAG laser with SESAM ( semiconductor saturable absorber mirror), wavelength 1064nm. At a pump power of 7.6w, the pulse width was estimated to be similar to 8.3ps with repetition rate similar to 130MHz and the average output power was 1.59w. To our knowledge, this was the first demonstration that ceramic Nd: YAG was used for diode pumped CW passively mode locking. (C) 2005 Optical Society of America.

Passively Q-switched Nd : GdVO4 laser with In0.25Ga0.75As being an output coupler

We report a diode-end-pumped passively Q-switched Nd:GdVO4 laser operating at 1.06 mu m with In0.25Ga0.75As being the saturable absorber as well as an output coupler. Q-switched pulses with a pulse duration of 20 ns, pulse energy 4.2 mu J and pulse repetition rate 200 kHz were produced, corresponding to peak power of 210 W. (c) 2006 Elsevier Ltd. All rights reserved.

A passively mode-locked diode-end-pumped Nd : YAG laser with a semiconductor saturable absorber mirror grown by metal organic chemical vapour deposition

We report the experimental results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductor saturable absorber mirror (SESAM) from which we achieved a 10 ps pulse duration at 150 MHz repetition rate. The SESAM was grown by metal organic chemical vapour deposition at low temperature. The recovery time was measured to be 0.5 ps, indicating the potential pulse compression to sub-picoseconds.

Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 muJ 52 ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEM00-mode.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd ! YVO, 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7. 5 W, 2. 81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37. 5% , and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler

A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.

Comparative study of the mode-locking of Nd:GdVO4 and Nd:YAG lasers with semiconductor saturable absorber mirrors

Stable continuous-wave passive mode-locking of diode-end-pumped Nd:GdVO4 and Nd:YAG lasers withsemiconductor saturable absorber mirrors (SESAMs) are reported. The comparative study shows that theNd:GdVO4 crystal is efficient to decrease the Q-switched mode-locking tendency, and easier to continuous-wave (CW) mode lock than Nd:YAG.

LD Side-Pumped Passive Mode-Locked TEM00 Nd:YAG Laser Based on SESAM

We report an LD side-pumped continuous-wave passive mode-locked Nd:YAG laser with a Z-type folded cavity based on a semiconductor saturable absorber mirror (SESAM). The average output power 2.95 W of mode-locked laser with electro-optical conversion efficiency of 1.3% and high beam quality (M-x(2) = 1.25 and M-y(2) = 1.22) is achieved. The repetition rate of mode-locked pulse of 88 MHz with pulse energy of 34 nJ is obtained.

Laser drilling improving circuit board manufacturing

We reported here a novel technique for laser high speed drillings on Printed Circuit Boards (PCBs). A CNC solid laser based system is developed to drill through and blind vias as an alternative to mechanical drilling. The system employs an Acousto-Optic Q-switched Nd: YAG laser, a computer control system and an X-Y moving table which can handle up to 400 x 400 mm PCB. With a special designed cavity the laser system works in a pulsed operation in order to generate pulses with width down to 0.5 mu s and maximum peak power over 10kW at 10k repetition rate. Delivered by an improved optical beam transforming system, the focused laser beam can drill hobs including blind vias on PCBs with diameter in the range of 0.1 - 0.4 mm and at up to 300 - 500 vias per second (depending on the construction of PCBs). By means of a CNC X-Y moving system, laser pulses with pulse-to-pulse superior repeatability can be fired at desired location on a PCBs with high accuracy. This alternative technology for drilling through or blind vias on PCBs or PWBs (printed wiring boards) will obviously enhance the capability to printed boards manufacturing.

Laser action from 1,3,5,7-tetramethyl-2,6-diethyl-8-n-propyl pyrromethene-BF2

We measured spectroscopic and laser action properties of a novel 8-position substituted pyrromethene-BF2, namely 1,3,5,7-tetramethyl-2,6-diethyl-8-n-propyl pyrromethene-BF2 complex. The laser action was performed with the corresponding dye solution in ethanol, which was placed in a Littman-type laser cavity pumped by the second harmonic of a Q-switched Nd:YAG laser. The spectroscopic measurements clearly indicated that the corresponding dye solution in ethanol exhibited intense absorption in the visible spectral region with large fluorescence quantum yield. It possesses rather low triplet-triplet absorption in the spectral region 460-550 nm and almost negligible triplet-triplet absorption in the lasing spectral region. As a consequence, it lases nearly as efficiently as commercially available benchmark laser dyes such as Rhodamine-6G and outperformed them in wavelength tunability in our laser cavity and pump geometry. (C) 2002 Optical Society of America.

钕玻璃、Nd：YAG和Nd：GGG热容激光特性比较

考虑固体热容激光器对工作介质的要求，对比分析了掺钕的玻璃、YAG和GGG的多种材料性能。并对三者在激光工作周期内的瞬态温度场及热应力进行了数值模拟。结果表明：在给定的边界及工作条件下，当钕玻璃激光器以热容方式工作，时间为5S时，介质最高升温超过400K，最大热致应力为25MPa，接近其断裂极限的50％。在此条件下进行冷却，当水温为283K时，需经过约120S才基本恢复到初始工作状态。而Nd：YAG和Nd：GGG两种介质在相同输入工作条件下，工作时间可达10S，且温度分布相对平坦，温差和热应力较小，经水冷约

LD 侧面抽运Nd :YAG陶瓷激光器运转条件下归一化热参数优化理论及实验研究

The suppressing effect of laser extraction on the non-radiation transition process is taken into account when the heat model of gain media is developed. Based on the developed heat model, the heat generation in the operating LD side-pumped Nd: YAG ceramic lasers is quantified through using the normalized heating parameter, which can be deduced from the experimental results of the slope efficiency and the absorbed pumping power of the gain media. The main factors which influence on the heat generation are investigated by studying the normalized heating parameter, and the results show that the changes of the laser extraction efficiency, the beam overlap efficiency and the Nd3+ concentration will result in obvious variations of the normalized heating parameter. In this work, the laser extraction efficiency increases to 0.905 by the optimization of the transmission of the output coupling, and the normalized heating parameter decrease to 0.474, correspondingly.

大功率线阵激光二极管侧面抽运Nd：YAG激光器特性研究

对激光二极管（LD）抽运固体激光器中大功率线阵激光二极管三向对称侧面抽运的漫反射腔结构进行了研究。激光器使用Nd：YAG作为激光晶体，电光器件材料为KD^＊P晶体，漫反射体为陶瓷材料。实验表明，抽运光的利用率和均匀性有较大提高。在重复频率为10Hz下，实现了脉冲宽度8ns，最大平均功率为近2W的1064nm红外激光输出，激光器的效率有显著提高。