面向网状信息的Radial+Focus可视化

针对当前网状信息可视化技术忽略了网状信息节点的可视信息的问题,提出一种面向网状信息的Radial+Focus可视化技术。首先介绍网状信息节点的信息详细度与先验重要度,并研究通过节点的交互历史计算节点的先验重要度的方法;然后研究了基于节点先验重要度的Radial+Focus布局算法;最后,给出了Radial+Focus可视化技术的应用实例和实验评估。实验评估表明,该技术能自然、高效地可视化网状信息,为用户对网状信息关系及网状信息节点的可视信息的分析提供有力的支持。

Rhythmic Growth-Induced Ring-Banded Spherulites with Radial Periodic Variation of Thicknesses Grown from Poly(epsilon-caprolactone) Solution with Constant Concentration

Birefringent ring-banded spherulites with radial periodic variation of thicknesses were grown from poly(epsilon-caprolactone) (PCL) solutions under conditions for which the Solution concentration was held constant during the whole development of the morphology. The as-grown ring-banded spherulites were investigated by optical (OM) and atomic force (AFM) microscopies, by transmission electron microscopy (TEM) of samples sectioned parallel to the plane of film, and also by electron diffraction (ED) and grazing incidence X-ray diffraction (GIXD) techniques.

Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors

Copper phthalocyanine organic thin-film transistors (OTFTs) were fabricated with top-gate geometry and the effects of different gate dielectrics on the transport proper-ties in OTFTs were studied. The mobility was found to be gate voltage dependent and the results showed that besides the charge density in the accumulation layer, the energetic disorder induced by gate dielectrics played an important role in determining the field-effect mobility in OTFTs.

Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator

Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode.

Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate

Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF2) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF2 nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.

Electrical characterization of copper phthalocyanine thin-film transistors with fluoride gate insulator

Different fluoride materials are used as gate dielectrics to fabricate copper phthalocyanine (CuPc) thin film. transistors (OTFTs). The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10(-3) to 10(-1) cm(2) V(-1)s(-1). The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs. The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.

High-mobility pentacene thin-film transistors with copolymer-gate dielectric

Pentacene thin-film transistors have been obtained using polymethyl-methacrylate-co-glyciclyl-methacrylate (PNIMA-GMA) as the gate dielectric. The optimum active layer thickness in thin-film transistors (OTFTs) was investigated. The present devices show a wide operation voltage range. The on/off current ratio is as high as 10(5). In linear region (V-DS = -2V), the field-effect mobility of device increases with the increase in gate field at low-voltage region (V-G < - 20 V), and a mobility of 0.33 cm(2)/Vs can be obtained when V-G > 20 V. In saturation region, the mobility increases linearly with the gate field, and a high mobility of 1.14 cm(2)/Vs can be obtained at V-G = -95V. The influence of voltage on mobility of device was investigated.

Electrical characteristics of copper phthalocyanine thin-film transistors with polyamide-6/polytetrafluoroethylene gate insulator

Polyamide- 6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.

Organic thin-film transistors having inorganic/organic double gate insulators

Bottom-contact organic thin-film transistors (BC OTFTs) based on inorganic/organic double gate insulators were demonstrated. The double gate insulators consisted of tantalum pentoxide (Ta2O5) with high dielectric constant (kappa) as the first gate insulator and octadecyltrichlorosilane (OTS) with low kappa as the second gate insulator. The devices have carrier mobilities larger than 10(-2) cm(2)/V s, on/off current ratio greater than 10(5), and the threshold voltage of -14 V, which is threefold larger field-effect mobility and an order of magnitude larger on/off current ratio than the OTFTs with a Ta2O5 gate insulator. The leakage current was decreased from 2.4x10(-6) to 7.4x10(-8) A due to the introduction of the OTS second dielectric layer. The results demonstrated that using inorganic/organic double insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics.

Copper phthalocyanine organic thin-film transistors with calcium fluoride gate insulator

We report the fabrication of organic thin-film transistors (OTFTs) with copper phthalocyanine (CuPc) as the semiconductor and calcium fluoride (CaF2) as the gate dielectric on the glass substrate. The fabricated transistors show a gate voltage dependent carrier field effect mobility that ranges from 0.001 to 0.5 cm(2) V-1 s(-1). In the devices, the CaF2 dielectric is formed by thermal evaporation; thus OTFTs with a top-gate structure can be fabricated. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for the integration of organic displays.

Studies of perchlorate triggered ion-gate behavior of sBLM by electrochemiluminescence and its application to a sensor for perchlorate

Ru(bpy)(3)(2+) electrochemiluminescence (ECL) method and electrocatalysis method were first used to study the ion-gate behavior of supported lipid bilayer membrane (sBLM). We found that sBLM, made of dimethyldioctadecylammonium bromide (a kind of synthetic lipid), showed ion-gate behavior for the permeation of Ru(bpy)(3)(2+) in the presence of perchlorate anion. There existed a threshold concentration (0.1 muM) of perchlorate anion for ion-gate opening. Below the threshold the ion-gate was closed. Above the threshold, the number of opened ion-gate sites increased with the increase of perchlorate anion concentration and leveled off at concentrations higher than 1200 muM. Based on it, a new sensor for perchlorate was developed. Furthermore, the opening and closing of the ion-gate behavior was reversible, which means the sensor can repeatedly be used.

Periodic radial growth in ring-banded spherulites of poly(epsilon-caprolactone)/poly(styrene-co-acrylonitrile) blends

The isothermal crystallization process of a PCL/SAN blend (90/10 wt.-%) was investigated by using real time image analysis and hot stage optical microscopy. It was found that the growth rate of ring-banded spherulites in the isothermal crystallization process is not constant. Slow growth occurs in the bright bands, while fast growth is found in the dark bands. The radially unequal growth rate of ring-banded spherulites in PCL/SAN blends may be related to the convex band structure on the surface. This new discovery gives us the idea that rhythmic growth is effective in the growth process of ring banded spherulites.

Modern changes of tidal troughs among the radial sand ridges in northern Jiangsu coastal zone

Using satellite images taken on different dates, GIS analysis of aerial photos, bathymetric maps and other field survey data, tidal troughs and major sand ridges in the northern Jiangsu coastal area were contrasted. The results show that there have been three types of movement or migration of tidal trough in this area: (1) Periodic and restricted, this type of trough usually developed along the beaches with immobile gully head as a result of the artificial dams and the swing range increased from gully head to the low reaches, so they have been obviously impacted by human activity and have longer swing periods; (2) Periodic and actively, this kind of trough, which swung with a fast rate and moved periodically on sand ridges, were mainly controlled by the swings of the host tidal troughs and hydrodynamic forces upon tidal sand ridge and influenced slightly by human constructions; (3) Steadily and slowly, they are the main tidal troughs with large scale and a steady orientation in this area and have slow lateral movement. The differences in migration mode of tidal trough shift result in different rates of migration and impact upon tidal sand ridges. Lateral accumulation on current tidal trough and deposition on abandoned tidal troughs are the two types of sedimentation of the tidal sand ridges formation. The whole radial sand ridge was generally prone to division and retreat although sand ridges fluctuated by the analysis of changes in talwegs of tidal troughs and shorelines of sand ridges.

On the relationships between the radial tidal current field and the radial sand ridges in the southern Yellow Sea: a numerical simulation

The ori-in of the radial sand ridges (RSRs) in the southern Yellow Sea has been a controversial problem since they were discovered in the early 1960s. To resolve the problem, two key questions need to be answered: (1) was the radial tidal current field in the RSR area generated by the submarine topography, or (2) did it exist before the RSRs occurred? In this study, the M-2 tide and tidal currents in the RSR area were simulated with a two-dimensional tidal model using a flat bottom and a shelving slope topography, the results being then compared with the field data. It is demonstrated that the radial tidal current field in the southern Yellow Sea is independent of bottom topography, and may thus be the controlling factor generating the RSRs. The radial tidal current field probably existed before the RSRs were formed.