Quantum master equation scheme of time-dependent density functional theory to time-dependent transport in nanoelectronic devices

In this work a practical scheme is developed for the first-principles study of time-dependent quantum transport. The basic idea is to combine the transport master equation with the well-known time-dependent density functional theory. The key ingredients of this paper include (i) the partitioning-free initial condition and the consideration of the time-dependent bias voltages which base our treatment on the Runge-Gross existence theorem; (ii) the non-Markovian master equation for the reduced (many-body) central system (i.e., the device); and (iii) the construction of Kohn-Sham master equations for the reduced single-particle density matrix, where a number of auxiliary functions are introduced and their equations of motion (EOMs) are established based on the technique of spectral decomposition. As a result, starting with a well-defined initial state, the time-dependent transport current can be calculated simultaneously along with the propagation of the Kohn-Sham master equation and the EOMs of the auxiliary functions.

Anomalous photoluminescence of InAs quantum dots implanted by Mn ions

The photoluminescence (PL) of Mn-implanted quantum dot (QD) samples after rapid annealing is studied. It is found that the blue shift of the PL peak of the QDs, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. This anomaly is probably related to the migration of Mn atoms to the InAs QDs during annealing, which leads to strain relaxation when Mn atoms enter InAs QDs or to the suppression of the inter-diffusion of In and Ga atoms when Mn atoms surround QDs. Both effects will suppress the blue shift of the QD PL peaks. The temperature dependence of the PL intensity of the heavily implanted QDs confirms the existence of defect traps around the QDs. (c) 2006 Elsevier B.V. All rights reserved.

Design and characteristics of quantum cascade laser-based CO detection system

National High Technology Research and Development Program of China 2007AA03Z112；Program of Ministry of Education of China 20060183030；Program of Jilin Provincial Science and Technology Department of China 20070709；Program of Bureau of Science and Technology of Changchun City 2007107

Nonlinear Rashba model and spin relaxation in quantum wells

We find that the Rashba spin splitting is intrinsically a nonlinear function of the momentum, and the linear Rashba model may overestimate it significantly, especially in narrow-gap semiconductors. A nonlinear Rashba model is proposed, which is in good agreement with the numerical results from the eight-band k center dot p theory. Using this model, we find pronounced suppression of the D'yakonov-Perel' spin relaxation rate at large electron densities, and a nonmonotonic dependence of the resonance peak position of the electron spin lifetime on the electron density in [111]-oriented quantum wells, both in qualitative disagreement with the predictions of the linear Rashba model.

Electronic structure of ZnO wurtzite quantum wires

The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R >= 3 nm are studied in the framework of six-band effective-mass envelope function theory. The hole effective-mass parameters of ZnO wurtzite material are calculated by the empirical pseudopotential method. It is found that the electron states are either two-fold or four-fold degenerate. There is a dark exciton effect when the radius R of the ZnO quantum wires is in the range of [3,19.1] nm (dark range in our model). The dark ranges of other wurtzite semiconductor quantum wires are calculated for comparison. The dark range becomes smaller when the |Delta(so)| is larger, which also happens in the quantum-dot systems. The linear polarization factor of ZnO quantum wires is larger when the temperature is higher.

Electronic structure of InSb quantum ellipsoids in an external magnetic field

The shape dependence of electronic structure, electron g factors in the presence of the external magnetic field of InSb quantum ellipsoids are investigated in the framework of eight-band effective-mass approximation. It is found that as the increasing aspect ratio e, the electron states with P character split into three doublets for the different physical interaction and the light-hole states with S character come up to the top of valence bands at e = 2.6 in comparison with the heavy-hole states. In the presence of the external magnetic field, the energy splits of electron states are different for their wave function distribution direction, and the hole ground state remain optical active for a suitable aspect ratio. The electron g factors of InSb spheres decrease with increasing radius, and have the value of about two for the smallest radius, about -47.2 for sufficiently larger radius, similar to the bulk material case. Actually, the electron g factors decrease as any one of the three dimensions increase. The more dimensions increase, the more g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimensions. (c) 2006 Elsevier B.V. All rights reserved.

Electronic structure and g factors of CdTe quantum ellipsoids

The electronic structure, electron and hole g factors and optical properties of CdTe quantum ellipsoids are investigated, in the framework of eight-band effective-mass approximation. It is found that the light-hole states come down in comparison with the heavy-hole states when the spheres are elongated, and become the lowest states of valence band. When the aspect ratio of the ellipsoid length to diameter (e) changes from smaller than 1 to larger than 1, the linear polarization factors change from negative to positive. The electron g factors of CdTe spheres decrease with increasing radius, and are nearly 2 when the radius is very small. Actually, as some of the three dimensions increase, the electron g factors decrease. More dimensions increase, the g factors decrease. more. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimension. The light-hole and heavy-hole g factors of quantum spheres are equal, and change from 0.88 to -1.14 with increasing radius. When e < 1 (e > 1) the light-hole g factor is smaller (larger) than the heavy-hole g factor. (c) 2006 Elsevier B.V. All rights reserved.

MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting

GaAs-based InAs quantum dots using InGaAs composition-graded metamorphic layers have been investigated by molecular beam epitaxy. Emission with the wavelength similar to 1.5 mu m from the dots was obtained at room temperature with the relatively large full width at half maximum. The emission wavelength is relatively stable when subjected to fast annealing. The number density of dots reached similar to 6 x 10(10) cm(-2). Undulated morphology was observed on the surface of the sample, which has some influence on the dot size and distribution. In epilayers, misfit dislocations were confined within the step-graded InGaAs metamorphic buffer layer. (c) 2006 Elsevier B.V. All rights reserved.

Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells

The nonradiative recombination effect on carrier dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence (TRPL) and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well stimulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.

Influences of quantum noises on direct-modulated properties of 1.3-mu m InGaAsP/InP laser diodes

Due to the zero dispersion point at 1.3-mu m in optical fibres, 1.3-mu m InGaAsP/InP laser diodes have become main light sources in fibre communication systems recently. In fluences of quantum noises on direct-modulated properties of single-mode 1.3-mu m InGaAsP/InP laser diodes are investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated single-mode laser system are calculated using the linear approximation method. We find that the stochastic resonance (SR) always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coeffcient between the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated InGaAsP/InP laser diodes and improve the quality of optical fibre communication systems.

Photocurrent response in a double barrier structure with quantum dots-quantum well inserted in central well

We report the photocurrent response in a double barrier structure with quantum dots-quantum well inserted in central well. When this quantum dots-quantum well hybrid heterostructure is biased beyond + 1 or -I V, the photocurrent response manifests itself as a steplike enhancement, increasing linearly with the light intensity. Most probably, at proper bias condition, the pulling down of the X minimum of GaAs at the outgoing interface of the emitter barrier by the photovoltaic effect in GaAs QW will initiate the r,-X-X tunneling at much lower bias as compared with that in the dark. That gives rise to the observed photocurrent response. (c) 2006 Elsevier B.V. All rights reserved.

Optical properties and g factors of GaAs quantum rods

The Hamiltonian of the zinc-blende quantum rods in the framework of eight-band effective-mass approximation in the presence of external homogeneous magnetic field is given. The electronic structure, optical properties and electron g factors of GaAs quantum rods are investigated. We found that the electron g factors are very sensitively dependent on the dimensions of the quantum rods. As some of the three dimensions increase, the electron g factors decrease. The more the dimensions increase, the more the electron g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the electron g factors more than the other dimension. (c) 2006 Elsevier B.V. All rights reserved.

Quantum coherence control of solid-state charge qubit by means of a suboptimal feedback algorithm

The quantum coherence control of a solid-state charge qubit is studied by using a suboptimal continuous feedback algorithm within the Bayesian feedback scheme. For the coherent Rabi oscillation, the present algorithm suggests a simple bang-bang control protocol, in which the control parameter is modulated between two values. For the coherence protection of the idle state, the present approach is applicable to arbitrary states, including those lying on the equator of the Bloch sphere which are out of control in the previous Markovian feedback scheme.

Influence of dislocation stress field on distribution of quantum dots

InAs quantum dots (QDs) were grown on In0.15Ga0.85As strained layers by molecular beam epitaxy on GaAs (0 0 1) substrates. Atomic force microscopy and transmission electron microscopy study have indicated that In0.15Ga0.85As ridges and InAs QDs formed at the inclined upside of interface misfit dislocations (MDs). By testifying the MDs are mixed 60 degrees dislocations and calculating the surface stress over them when they are 12-180 nm below the surface, we found the QDs prefer nucleating on the side with tensile stress of the MDs and this explained why the ordering of QDs is weak when the InGaAs layer is relatively thick. (c) 2006 Elsevier B.V. All rights reserved.

Temperature dependence of surface quantum dots grown under frequent growth interruption

We grow InGaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption in MBE system. It is found that because of the extreme growth condition, QDs exhibit a thick wetting layer, large QD height value and special surface morphology which is attributed to the enhanced adatom surface diffusion and In-segregation effect. Temperature dependence of photoluminescence measurement from surface QD shows that this kind of QD has good thermal stability which is explained in terms of the presence of surface oxide. The special distribution of QD may also play a role in this thermal character. (c) 2006 Elsevier B.V. All rights reserved.