ELECTROOXIDATION OF A CHLORIDE COMPLEX OF PLATINUM(II) AT A GLASSY-CARBON ELECTRODE

The electro-oxidation of PtCl42- was studied on a glassy carbon (GC) electrode. A Pt(IV) complex was formed on the electrode surface through coordination to the oxygen atom of an oxide functional group on the electrode, which results in its deactivation. The ferri/ferrocyanide redox couple was used as a probe to examine the activity of the GC electrode. X-ray photoelectron spectroscopy was employed to characterize the platinum on the electrode surface, and showed that the oxidation state of the Pt element changes depending on the electrochemical treatment of GC electrode. The platinum complex on the surface of the GC electrode can be transformed to Pt-0 by cycling the electrode between -0.25 and +1.65 V/SCE in 0.1 M H2SO4 solution. The above procedure can be used to disperse platinum ultramicroparticles on the surface of a GC electrode.

UNUSUAL VOLTAMMETRIC BEHAVIOR OF AN ELECTROCHEMICALLY SYNTHESIZED CONDUCTING PLATINUM CLUSTER COMPOUND K-1.64[PT(C2O4)(2)]

The compound K-1.64[Pt(C2O4)(2)] was electrochemically synthesized on a glassy carbon electrode using both single-potential step and cyclic voltammetry techniques; voltammetric behaviour of the working electrode was changed dramatically with deposition of

DIRECT ELECTRON-TRANSFER REACTION OF HEMEPROTEINS PROMOTED BY METHYLENE-BLUE MODIFIED ELECTRODE

The heterogeneous electron transfer reaction of hemeproteins including hemoglobin, myoglobin and cytochrome C at Pt mesh electrode adsorbed methylene blue has been investigated. Thin-layer spectroelectrochemical technique was used for observing the electron transfer processes of three kinds of proteins, and the corresponding electrode rate constants were measured.

THE REVERSIBLE ELECTRON-TRANSFER REACTION OF MYOGLOBIN AT BRILLIANT CRESYL BLUE MODIFIED PLATINUM GAUZE ELECTRODE

The electrochemical behavior of myoglobin at a Brilliant Cresyl Blue (BCB) modified platinum gauze electrode and spiral pt wire in the BCB solution in optically transparent thin layer cell base been investigated by using cyclic potential-absorbance method and double potential step chronoabsorptometry. The results reveal a reversible electron transfer resection of myoglobin. Exhaustive reductive and oxidative electrolyses are achieved at the modified platinum surface in 20 and 100s respectively. The formal h...

The study of oxygen spillover and back spillover on Pt/TiO2 by a potential dynamic sweep method

Oxygen spillover and back spillover on Pt/TiO2 catalysts have been studied by a potential dynamic sweep method. The characteristics of I-V profiles of Pt/TiO2 electrodes in the three potential sweep regions are different from those of Pt and TiO2 electrodes. The catalytic role of Pt/TiO2 in oxygen spillover and back spillover is identified. It decreases, and the electrochemical oxygen adsorption (or desorption) increases with elevating temperature of hydrogen post-treatment of Pt/TiO2; to a certain extent (hydrogen post-treatment of Pt/TiO2 at 700 degrees C), the control step of oxygen electrode process (anodic oxidation or cathodic reduction) changes from oxygen diffusion to electrochemical oxygen adsorption or desorption, respectively. Increasing the amount of Pt supported on TiO2 enhances the processes of oxygen spillover and back spillover. (C) 1999 Elsevier Science B.V. All rights reserved.

Effect of Surface Condition of Electrode on the Surface Melting of Material by Laser-Guided Micro-Arc Discharge

This paper studies the surface melting in the atmosphere by YAG laser-guided micro-arc discharge. In three kinds of surface conditions (free, oiled, and polyethylene covered), we try to control the diameter and the power density of discharge pit. It is found that the power density of 3 x 10(6) W/cm(2) of discharge pit on the oiled surface is moderate to form the melted layer thicker than that of the others, adapting to strengthen the surface of material, and the power density of 1.07 x 10(7) W/cm(2) of discharge pit on the polyethylene-covered surface is highest to form the deepest discharge pit among them, adapting to remove the material.

Patterns and levels of PCDD/F in a Chinese graphite electrode sludge

The graphite electrode sludge was sampled from a huge chloralkali plant in central China. The total level of PCDD/F was found as high as 378.85 mu g/kg sludge (dry weight). The patterns of PCDD/F in each homologue indicated the predominance of tetra- to octa-chlorinated PCDFs, Furthermore, the toxic 2,3,7,8-substituted PCDFs constituted over 80% of the total PCDFs in the sludge and the corresponding PCDDs were only at 15 mu g/kg level. The calculated value of the international toxic equivalence (I-TEQ) in sludge was 21.65 mu g/kg sludge (dry weight). This typical "dioxin chloralkali pattern" was apparently identified in the sediments near the effluent outlet of the chloralkali plant.

硅化物表面与硅化物/硅界面研究——FeSi表面氧吸附与（Cr,pt）硅化物/硅界面研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles

The Pt nanoparticles (NPs), which posses the wider tunable localized-surface-plasmon (LSP) energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors.

Thermal annealing behaviour of Pt on n-GaN Schottky contacts

The structural evolution and temperature dependence of the Schottky barrier heights of Pt contacts on n-GaN epilayer at various annealing temperatures were investigated extensively by Rutherford backscattering spectrometry, x-ray diffraction measurements, Auger electron spectroscopy, scanning electron microscopy and current-voltage measurements. The temperature dependence of the Schottky barrier heights may be attributed to changes of surface morphology of Pt films on the surface and variation of nonstoichiometric defects at the interface vicinity. Experimental results indicated the degradation of Pt contacts on n-GaN above 600 degreesC.

Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500 degreesC and an intermediate-temperature buffer layer (ITBL) deposited at 690 degreesC. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode vertical bar non-aqueous electrolyte

Electrolyte electroreflectance spectra of the near-surface strained-layer In0.15Ga0.85As/GaAs double single-quantum-well electrode have been studied at different biases in non-aqueous solutions of ferrocene and acetylferrocene. The optical transitions, the Franz-Keldysh oscillations (FKOs) and the quantum confined Stark effects (QCSE) of In0.15Ga0.85As/GaAs quantum well electrodes are analyzed. Electric field strengths at the In0.15Ga0.85As/GaAs interface are calculated in both solutions by a fast Fourier transform analysis of FKOs. A dip is exhibited in the electric field strength versus bias (from 0 to 1.2 V) curve in ferrocene solution. A model concerning the interfacial tunneling transfer of electrons is used to explain the behavior of the electric field. (C) 2001 Elsevier Science B.V. All rights reserved.