70 resultados para Power supply circuits


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超导磁铁以其能实现极高的磁场强度和较低的能量损耗的优势,正在迅速成为现代加速器系统中普遍采用的一项技术。为超导磁体提供励磁的超导电源也就成为了必需研究的课题。此外,与之相似的低压大电流电源也大量的应用于加速器系统中,服务于核物理研究工作。针对这类电源在加速器中的应用,本课题的主要挑战在于如何实现一种高效率和低纹波输出特性的电源。为此,本论文的作者采用了一种完全不同的拓扑结构“多路多相同步整流BUCK变换器”,来达到高效率和低纹波的目标。并尝试使用数字技术来实现控制单元。本论文首先详细介绍了“多路多相同步整流BUCK变换器”的拓扑,通过计算和推导介绍了这种拓扑是如何提高效率和减少纹波电流输出的。然后介绍了这种拓扑结构所必需解决的均流问题、其产生原因和解决办法:一种几乎无损的单路电流的测量方法,以及这种测量方法的原理和实现方法。之后介绍了整个电源的参数计算和PCB板设计的一些细节。最后详细介绍了用MCU实现的控制器的设计细节。作为超导电源必配的失超保护装置,它担负着在失超故障状态,将超导磁体内存储的能量在尽量短的时间内消耗在外部负载上,以用于实现保护超导磁体的功能。因此超导磁铁失超保护装置 的设计原则是:可靠性和经济性。本论文最后一部分详细介绍了按照这个目标设计的超导磁铁失超保护装置及其设计细节

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本文主要介绍了HIRFL和HIRFL-CSR中使用的高稳定度直流稳流开关电源和脉冲开关电源的设计方法,给出了一台零电压开通移相软开关电源样机和一台斩波式两象限工作电源样机的设计过程的设计结果,并利用仿真软件对设计完成的电路进行了仿真,最后给出了样机电源的试验结果。引言介绍了本文选题的背景,HIRFL和HIRFL-CSR的有关情况,加速器对电源的要求,以及国内外同类电源的相关情况。第一章主要介绍了稳定电源中影响稳定度的主要因素及解决手段,最后建立起了斩波式电源和移相软开关电源的数学模型和等效电路。第二章主要介绍了零电压开通移相软开关电源的工作原理、设计方法、设计过程和样机试验结果。第三章则详细介绍了斩波式两象限工作电源的原理、设计、仿真和样机试验。第四章则讨论了开关电源的电磁兼容性,扼要介绍了电磁干扰的测量、抵制、相关国内国际标准,。然后分析了谐波的影响及其危害性,同时对CSR电源系统对电网将产生的影响进行了评估。第五章介绍了电源主要技术指标的定义、测量方法的测量仪器。第六章介绍了电源可靠性的有关概念及其评价。最后在第七章里,讨论了本文工作的意义。

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本文分析了国内外开关电源的发展和现状,研究了高压开关电源的基本原理以及开关电源在电力直流操作电源系统中的应用。根据兰州重离子加速器的要求,设计了一种高稳定度高压开关电源。该系统在借鉴国外和已有的类似电源的基础上,通过采用新的元器件和新的电力电子技术设计而成。该系统以工GBT作为功率开关器件,构成BUCK开关变换器,采用脉宽调制(PWM)技术来控制输出电压的变化。系统中采用TL494、UC3637、ML57962等一系列集成电路,以实现实时采样电压反馈信号、PWM信号以及工GBT所需要的功率驱动信号。电路中采用斩波调压和逆变分开,各司其职的结构,保证了电路可靠、线性的调节;采用前馈电路进行补偿,确保系统能很好的抑制电网的中频扰动。通过MATLAB的计算仿真证明,这些措施都对对系统的性能起到了很好的作用。为了系统的安全可靠,还设计了软启动和过流保护电路。通过实验证明该系统能安全、可靠运行,达到了设计要求。

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A packed-bed electroosmotic pump (EOP) was constructed and evaluated. The EOP consisted of three capillary columns packed in parallel, a gas-releasing device, Pt electrodes and a high-voltage power supply. The EOP could generate output pressure above 5.0 MPa and constant flow rate in the range of nl/min to a few mul/min for pure water, pure methanol, 2 mM potassium dihydrogenphosphate buffer, the buffer-methanol mixture and the pure water-methanol mixture at applied potentials less than 20 W The composition of solvent before/after pumping was quantitatively determined by using a gas chromatograph equipped with both flame ionization detector and thermal conductivity detector. It was found that there were no apparent changes in composition and relative concentrations after pumping process for a methanol-ethanol-acetonitrile mixture and a methanol-water mixture. Theoretical aspect of the EOP was discussed in detail. An capillary HPLC system consisting of the EOP, an injection valve, a 15 cm x 320 mum i.d., 5 mum Spherigel C(18) stainless steel analytical column, and an on-column UV detector was connected to evaluate the performance of the EOP. A comparative study was also carried out with a mechanical capillary HPLC pump on the same system. The results demonstrated that the reproducibility of flow rate and the pulsation-free flow property of the EOP are superior to that of mechanical pump in capillary HPLC application. (C) 2004 Elsevier B.V. All rights reserved.

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An electroosmotic pump (EOP) capable of generating pressure above 3 MPa and mul/min flow rate with reverse phase mobile phases of HPLC was constructed and evaluated. The pump consisted of three parallel connected fused silica capillary columns (25 cm x 320 mum I.D.) packed with 2 mum silica materials, hollow electrodes, a high voltage DC power supply, and. a liquid pressure transducer. The EOP was applied in a capillary liquid chromatographic system for mobile phase delivery instead of a mechanical pump. Standard samples containing thiourea, naphthalene, anthracene, phenanthrene and acetonitrile were separated on a 15 cm x 320 mum I.D. 5 mum Chromasil C-18 packed capillary column with acetonitrile/water as mobile phase. (C) 2003 Elsevier Science B.V. All rights reserved.

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Capillary isoelectric focusing (cIEF) and capillary zone electrophoresis (CZE) was on-line hyphenated by a dialysis interface to achieve a 2D capillary electrophoresis (CE) system. The system was used with just one high-voltage power supply and three electrodes (one cathode shared by the two dimensions). The focused zone in the first dimension (i.e. the cIEF) was driven to the dialysis interface by electroosmotic flow (EOF), besides chemical mobilization from the first anode to the shared cathode. And then in the second dimension (i.e. the CZE), the separated zone was further separated and driven by an inverted EOF, which originated from the charged layer of a cationic surfactant adsorbed onto the inner wall of the capillary. Finally, a solution of ribonuclease was rapidly separated to assess the feasibility of the two-dimensional CE implement. (C) 2003 Elsevier B.V. All rights reserved.

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轮式移动宜人机器人项目研究的主要目的是开发自主式仿人机器人样机 ,探索先进的机器人理论和技术。轮式移动宜人机器人由正交轮式移动平台、腰部、躯干及头部和双臂组成 ,共 2 1个自由度。整体结构包括 :电源系统、机械系统、控制系统和传感系统。电源系统采用车载电池供电。机械系统包括变刚度结构 ,提高了机器人与人交互作业的安全性。控制系统分为中央协调层和执行层结构。传感系统主要实现关节位置检测、姿态检测、力检测和视觉。文章讨论了此机器人的研究进展。

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In this paper, a low-power, highly linear, integrated, active-RC filter exhibiting a multi-standard (IEEE 802.11a/b/g and DVB-H) application and bandwidth (3MHz, 4MHz, 9.5MHz) is present. The filter exploits digitally-controlled polysilicon resister banks and an accurate automatic tuning scheme to account for process and temperature variations. The automatic frequency calibration scheme provides better than 3% corner frequency accuracy. The Butterworth filter is design for receiver (WLAN and DVB-H mode) and transmitter (WLAN mode). The filter dissipation is 3.4 mA in RX mode and 2.3 mA (only for one path) in TX mode from 2.85-V supply. The dissipation of calibration consumes 2mA. The circuit has been fabricated in a 0.35um 47-GHz SiGe BiCMOS technology, the receiver and transmitter occupy 0.28-mm(2) and 0.16-mm(2) (calibration circuit excluded), respectively.

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This paper presents a wide tuning range CMOS frequency synthesizer for dual-band GPS receiver, which has been fabricated in a standard 0.18-um RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45GHz and 3.14GHz in case of process corner or temperature variation, with a current consumption varying accordingly from 0.8mA to 0.4mA, from a 1.8V supply voltage. The measurement results show that the whole frequency synthesizer costs a very low power consumption of 5.6mW working at L I band with in-band phase noise less than -82dBc/Hz and out-of-band phase noise about -112 dBc/Hz at 1MHz offset from a 3.142GHz carrier.

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An ultra low power non-volatile memory is designed in a standard CMOS process for passive RFID tags. The memory can operate in a new low power operating scheme under a wide supply voltage and clock frequency range. In the charge pump circuit the threshold voltage effect of the switch transistor is almost eliminated and the pumping efficiency of the circuit is improved. An ultra low power 192-bit memory with a register array is implemented in a 0.18 mu M standard CMOS process. The measured results indicate that, for the supply voltage of 1.2 volts and the clock frequency of 780KHz, the current consumption of the memory is 1.8 mu A (3.6 mu A) at the read (write) rate of 1.3Mb/s (0.8Kb/s).

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Directional coupler can be constructed by putting multiple photonic crystal waveguides together. The propagation of the optical field entering this system symmetrically was analysed numerically according to self-imaging principle. On the basis of this structure, ultracompact multiway beam splitter was designed and the ones with three and four output channels were discussed in details as examples. By simply tuning the effective refractive index of two dielectric rods in the coupler symmetrically to induce the redistribution of the power of the optical field, uniform or free splitting can be achieved. Compared with the reported results, this way is simpler, more feasible and more efficient and has extensive practical value in future photonic integrated circuits.

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An three phase adjustable output voltage rectifier with constant power flow based on waveform gap patching principle is resented. By patching the gapes in the phase currents in parallel way as well as the ripple of the output voltage in series way, it implements the constant power flow from the three-phase line to the DC output without using any line frequency (and its harmonics) energy storage components. Principally, by treating only 22.4% power of the needed power output, this rectifier can supply constant power flow with adjustable output voltages without bring about any harmonic interferences to the power utility and achieve unite power factor.

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A novel ultra low power temperature sensor for UHF RFID tag chip is presented. The sensor consists of a constant pulse generator, a temperature related oscillator, a counter and a bias. Conversion of temperature to digital output is fulfilled by counting the number of the clocks of the temperature related oscillator in a constant pulse period. The sensor uses time domain comparing, where high power consumption bandgap voltage references and traditional ADCs are not needed. The sensor is realized in a standard 0.18 mu m CMOS process, and the area is only 0.2mm(2). The accuracy of the temperature sensor is +/- 1 degrees C after calibration. The power consumption of the sensor is only 0.9 mu W.

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This paper presents experimental results of an analog baseband circuit for China Multimedia Mobile Broadcasting (CMMB) direct conversion receiver in 0.35um SiGe BiCMOS process. It is the first baseband of CMMB RFIC reported so far. A 8(th)-order chebyshev low pass filter (LPF) with calibration system is used in the analog baseband circuit, the filter provides 0.5 dB passband ripple and -35 dB attenuation at 6MHz with the cutoff frequency at 4MHz, the calibration of filter is reported to achieve the bandwidth accuracy of 3%. The baseband variable gain amplifier (VGA) achieves more than 40 dB gain tuning with temperature compensation. In addition, A DC offset cancellation circuit is also introduced to remove the offset from layout and self-mixing, and the remaining offset voltage and current consumption are only 6mV and 412uA respectively. Implemented in a 0.35um SiGe technology with 1.1 mm(2) die size, this tuner baseband achieves OIP3 of 25.5 dBm and dissipate 16.4 mA under 2.8-V supply.

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In this paper fabrication of high power light emitting diodes (LEDs) with combined transparent electrodes on both P-GaN and N-GaN have been demonstrated. Simulation and experimental results show that comparing with traditional metal N electrodes the efficacy of LEDs with transparent N electrode is increased by more than 10% and it is easier in process than the other techniques. Further more, combining the transparent electrodes with dielectric anti-reflection film, the extraction efficiency can be improved by 5%. At the same time, the transparent electrodes were protected by the dielectric film and the reliability of LEDs can be improved.