Uncooled Submarine Pump Laser Module at 980 nm

We present a new generation 980 nm submarine pump module that consists of a hermitically sealed 8-pin ceramic MiniDIL package without thermo-electric cooler.

A New Technique for Side Pumping of Double-Clad Fiber Lasers

We report a new technique, called SAP, for side pumping of double-clad, rare-earth-doped fiber lasers using fiber-coupled pump sources. The highest coupling efficiency can even exceed 92% in theory with this structure.

An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser

An improved selective area growth (SAG) method is proposed to better the fabrication and performance of the Electroabsorption modulated laser The typical threshold current of the EML is 18mA, and the output power is 5.6mW at EAM facet.

Magnetic properties of ZnO-doped cobalt ferrite

The cobalt ferrites with chemical composition Co1+xZnxFe2-2xO4 (r=0.0, 0.1, 0.2, 0.4) were obtained with conventional solid reaction. The ZnO-doped samples have lower lattice constant than CoFe2O4 by adjusting Co ions to the octahedral sites. The results show that doping ZnO could extremely improve the magnetic properties. In comparison with pure CoFe2O4, the little ZnO-doped sample has higher permeability and much lower coercivity at the condition of a little decrease of magnetization saturation. Sample with x=0.1 shows evident magnetostrictive effect at the magnetic field of 30-60 mT while pure cobalt ferrite sample does not, though the saturation magnetostriction decreases. These indicate that ZnO-doping improves the magnetostrictive sensitivity of the cobalt ferrites and have potential applications in magnetoelectric devices and magnetic detector.

A Novel Architecture of Vision Chip for Fast Traffic Lane Detection and FPGA Implementation

This paper presents a novel architecture of vision chip for fast traffic lane detection (FTLD). The architecture consists of a 32*32 SIMD processing element (PE) array processor and a dual-core RISC processor. The PE array processor performs low-level pixel-parallel image processing at high speed and outputs image features for high-level image processing without I/O bottleneck. The dual-core processor carries out high-level image processing. A parallel fast lane detection algorithm for this architecture is developed. The FPGA system with a CMOS image sensor is used to implement the architecture. Experiment results show that the system can perform the fast traffic lane detection at 50fps rate. It is much faster than previous works and has good robustness that can operate in various intensity of light. The novel architecture of vision chip is able to meet the demand of real-time lane departure warning system.

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

Photochromic diarylethene for reversible holographic recording

A novel photochromic, diarylethene with 2,5-dihydrothiophene bridging unit la was synthesized, and the photochromic properties of 1 were also investigated. It showed that I exhibited excellent ring-open and ring-closed photochromism with UV/vis light irradiation. Holographic recording was measured by employing the thin film of PMMA-diarylethene 1 as recording media. It showed that six different images were recorded in the same place on the sample with the dimension of 64 mu m x 42 mu m by the intersecting of the object beam and a reference beam with an intensity of 15 mW/cm(2), and the stored information was readout by the attenuated reference beam with an intensity of 0.5 mW/cm(2). In addition, preliminary investigations showed that the material was thermally stable and fatigue resistant. (C) 2007 Elsevier B.V. All rights reserved.