Room temperature efficient actively Q-switched Ho:YAP laser

We report on efficient actively Q-switched Ho: YAP laser double-pass pumped by a 1.91-mu m laser. At room temperature, when the incident pump power was 20.9 W, a maximum average output power of 10.9W at 2118 nm was obtained at the repetition rate of 10 kHz, and this corresponds to a conversion efficiency of 52.2% and a slope efficiency of 63.5%. Moreover, a maximum pulse energy of similar to 1.1 mJ and a minimum pulse width of 31 ns were achieved, with the peak power of 35.5 kW. (C) 2009 Optical Society of America

Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs

We report the technique of the ion-implanted semi-insulating GaAs wafer used for passive Q-switched mode locking in double-cladding Yb:fiber laser. The wafer was implanted with 400-keV energy, 10(16)/cm(2) dose As+ ions, and was annealed at 600degreesC for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q-switched mode locking is 50-kHz with a FWHM envelope of 4mus. The repetition rate of mode locked pulse train was found to be 15-MHz. This is the first report of such a kind of laser to the best of our knowledge.

Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber

Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal organic vapor phase epitaxy on a semi-insular GaAs substrate. With such an absorber as well as an output coupler we obtain Q-switched mode-locked (QML) 1064 nm Nd:GdVO4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. The repetition rate of the Q-switched envelope increased from 100 to 660 kHz as the pump power increased from 2.28 to 7.29 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of similar to 1.36 GHz. A maximum average output power of 953 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally. (C) 2005 Elsevier B.V. All rights reserved.

Q-switched and mode-locked diode-pumped Nd : YAG laser with an LT-GaAs

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained. (c) 2005 Elsevier GmbH. All rights reserved.

LD side-pumped high beam quality passive Q-switched and mode-locked Nd:YAG laser based on SESAM

We report a LD side-pumped fundamental-mode (Mx(2) = 1.35 and My(2) = 1.27) passive Q-switched and mode-locked Nd:YAG laser based on a semiconductor saturable absorber mirror (SESAM). At a pump current of 12.5 A, the average output power of 5.68 W with 80 kHz repetition rate and 2 mu s pulse width of the Q-switched envelope was generated. The repetition rate of the mode-locked pulse within the Q-switched envelope of 88 MHz was achieved.

Cr^4＋：YAG被动调QNd：YAG陶瓷激光器的研究

介绍了近几年迅速发展的一种新型激光介质——透明Nd：YAG多晶陶瓷的发展状况，对比分析了多晶陶瓷与单晶的光谱特性、激光特性和连续实验研究情况。并对钛宝石激光器调谐至808nm，端面抽运Nd：YAG陶瓷被动调Q全固态激光器的脉冲运转进行了较为详细的理论分析和实验研究。采用初始透射率为90％的Cr^4＋：YAG可饱和吸收晶体，被动调Q的阈值功率为119mW，当端面抽运功率为465mW时，获得波长为1064nm，脉宽为16ns，重复频率为18．18kHz，单脉冲能量为3．4μJ，平均输出功率为61mW的稳定调Q

侧面抽运国产Nd∶YAG陶瓷棒的激光特性

实验研究了激光二极管阵列(LDA)侧向抽运国产Nd∶YAG陶瓷棒的准连续及被动调Q激光输出特性。该陶瓷激光器采用LDA侧面紧密环绕均匀排布的抽运结构,陶瓷棒抽运区域长度为20 mm,其总尺寸为3 mm×35 mm,掺杂原子数分数为~1%。在千赫兹准连续运转条件下,当平-平谐振腔的输出耦合镜透过率为47.3%时,获得最大平均功率23 W的1064 nm激光输出,光束发散角为4.5 mrad,斜率效率达12%。在谐振腔内插入Cr4+∶YAG晶体作为被动调Q开关,成功地实现了陶瓷激光器千赫兹重复频率调Q激光脉冲输出,当Cr4+∶YAG晶体初始透过率为60%时,输出激光脉冲宽度(半峰全宽)可窄至14.5 ns,调Q动静比约为40%。

Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser

A passively Q-switched and mode-locked diode-pumped Nd:GdVO4 laser was demonstrated using a low-temperature-grown GaAs wafer (LT-GaAs) as an intracavity saturable absorber. The maximal Q-switched mode-locked average output power was 750 mW with the Q-switched envelop having a repetition rate of 167 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 790 MHz.

1ps passively mode-locked laser operation of Na, Yb : CaF2 crystal

Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

Diode-pumped passively mode-locked YVO4/Nd : YVO4 composite crystal laser with LT-In0.25Ga0.75As saturable absorber

A passively mode-locked all-solid-state YVO4/Nd:YVO4 composite crystal laser was realized with a low temperature (LT) In0.25Ga0.75As semiconductor saturable absorber mirror. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Both the Q-switch and continous-wave mode locking operation were experimentally realized. At a pump power of 4 W, the Q-switched mode locking changed to continuous wave mode locking. An average output power of 4.1 W with 5 ps pulse width was achieved at the pump power of 12 W, corresponding to an optical-optical conversion efficiency of 34.2%.