Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations

Neutron induced defect levels in high resistivity silicon detectors have been studied using a current-based macroscopic defect analysis system: thermally stimulated current (TSC) and current deep level transient spectroscopy (I-DLTS). These studies have been correlated to the traditional C-V, I-V, and transient current and charge techniques (TCT/TChT) after neutron radiation and subsequent thermal anneals. It has been found that the increases of the space charge density, N-eff, in irradiated detectors after thermal anneals (N-eff reverse anneal) correspond to the increases of deep levels in the silicon bandgap. In particular, increases of the double vacancy center (V-V and V-V-- -) and/or C-i-O-i level have good correlations with the N-eff reverse anneal. It has also been observed that the leakage current of highly irradiated (Phi(n) > 10(13) n/cm(2)) detectors increases after thermal anneals, which is different from the leakage current annealing behavior of slightly irradiated (Phi(n) < 10(13) n/cm(2)) detectors. It is apparent that V-V center and/or C-i-O-i level play important roles in both N-eff and leakage current degradations for highly irradiated high resistivity silicon detectors.

STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES

Experimental study of the reverse annealing of the effective concentration of ionized space charges (N-eff, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors fabricated on wafers with various thermal oxides has been conducted at room temperature (RT) and elevated temperature (ET). Various thermal oxidations with temperatures ranging from 975 degrees C to 1200 degrees C with and without trichlorethane (TCA), which result in different concentrations of oxygen and carbon impurities, have been used. It has been found that, the RT annealing of the N-eff is hindered initially (t < 42 days after the radiation) for detectors made on the oxides with high carbon concentrations, and there was no carbon effect on the long term (t > 42 days after the radiation) N-eff reverse annealing. No apparent effect of oxygen on the stability of N-eff has been observed at RT. At elevated temperature (80 degrees C), no significant difference in annealing behavior has been found for detectors fabricated on silicon wafers with various thermal oxides. It is apparent that for the initial stages (first and/or second) of N-eff reverse annealing, there may tie no dependence on the oxygen and carbon concentrations in the ranges studied.

Study of intensity-dependent nonlinear optical coefficients of GaP optical crystal at 800 nm by femtosecond pump-probe experiment

The intensity-dependent two-photon absorption and nonlinear refraction coefficients of GaP optical crystal at 800 nm were measured with time-resolved femtosecond pump-probe technique. A nonlinear refraction coefficient of 1.7*10^(-17) m2/W and a two-photon absorption coefficient of 1.5*10^(-12) m/W of GaP crystal were obtained at a pump intensity of 3.5*10^(12) W/m2. The nonlinear refraction coefficient saturates at 3.5*10^(12) W/m2, while the two-photon absorption coefficient keeps linear increase at 6*10^(12) W/m2. Furthermore, fifth-order nonlinear refraction of the GaP optical crystal was revealed to occur above pump intensity of 3.5*10^(12) W/m2.

Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR

于2010-11-23批量导入

Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Fluorescence Hydrogen Peroxide Probe Based on a Microstructured Polymer Optical Fiber Modified with a Titanium Dioxide Film

A highly sensitive microstructured polymer optical fiber (MPOF) probe for hydrogen peroxide was made by forming a rhodamine 6G-doped titanium dioxide film on the side walls of array holes in an MPOF. It was found that hydrogen peroxide only has a response to the MPOF probe in a certain concentration of potassium iodide in sulfuric acid solution. The calibration graph of fluorescence intensity versus hydrogen peroxide concentration is linear in the range of 1.6 x 10(-7) mol/L to 9.6 x 10(-5) mol/L. The method, with high sensitivity and a wide linear range, has been applied to the determination of trace amounts of hydrogen peroxide in a few real samples, such as rain water and contact lens disinfectant, with satisfactory results.

Cellulose acetate polymer film modified microstructured polymer optical fiber towards a nitrite optical probe

A novel microstructured polymer optical fiber (MPOF) probe for nitrites (NO(2)(-)) detection was made by forming rhodamine 6G (Rh 6G)-doped cellulose acetate (CA) on the side wall of array holes in a MPOF It was found that the MPOF probe only have a response to nitrites in a certain concentration of sulfuric acid solution The calibration graph of fluorescence intensity versus nitrites concentration was linear in the range of 2.0 x 10(-4) g/ml-5.0 x 10(-3) g/ml. The method possesses case of chemical modification, low cost design, and potential for direct integration with existing instrumentation, and has been applied to the determination of nitrites in real samples with satisfactory results. (C) 2010 Elsevier B.V. All rights reserved

PERFORMANCE OF DOUBLE SIDEBAND MODULATED PROBE WAVE IN BOTDA DISTRIBUTED FIBER SENSOR

We report on the performance of double sideband (DSB) modulated probe wave in Brillouin optical time domain analysis (BOTDA) distributed fiber sensor. Compared to single sideband (SSB)modulation, along the sensing fiber the pump depletion of DSB modulation is remarkably suppressed in time domain and also has a relatively narrower Brillouin gain spectrum in frequency domain. Both the theoretical simulation and the experimental results demonstrate that the DSB modulation provides potentially longer sensing distance and higher accuracy in measurement than the SSB modulation in the BOTDA distributed fiber sensor system.

Sagnac interferometry as a probe to the commutation relation of a macroscopic quantum mirror

Single photon Sagnac interferometry as a probe to macroscopic quantum mechanics is considered at the theoretical level. For a freely moving macroscopic quantum mirror susceptible to radiation pressure force inside a Sagnac interferometer, a careful analysis of the input-output relation reveals that the particle spectrum readout at the bright and dark ports encode information concerning the noncommutativity of position and momentum of the macroscopic mirror. A feasible experimental scheme to probe the commutation relation of a macroscopic quantum mirror is outlined to explore the possible frontier between classical and quantum regimes. In the Appendix, the case of Michelson interferometry as a feasible probe is also sketched.

Studies of a scintillator-bar detector for neutron wall at externaltarget facility

To achieve a better time resolution of a scintillator-bar detector for a neutron wall at the external target facility of HIRFL-CSR,we have carried out a detailed study of the photomultiplier,the wrapping material and the coupling media. The timing properties of a scintillator-bar detector have been studied in detail with cosmic rays using a high and low level signal coincidence. A time resolution of 80 ps has been achieved in the center of the scintillator-bar detector.

Impact Parameter Dependence of Double Neutron/Proton Ratio of Nucleon Emissions in Isotopic Reaction Systems

Within the transport model IBUU04, we investigate the double neutron/proton ratio of free nucleons taken from two reaction systems using two Sn isotopes at the beam energy of 50MeV/nucleon and with the impact parameters 2 fm, 4 fm and 8 fm, respectively. It is found that the double neutron/proton ratio from peripheral collisions is more sensitive to the density dependence of the symmetry energy than those from mid-central and central collisions.