Investigation on properties of TiO2 thin films deposited at different oxygen pressures

TiO2 thin films were prepared by electron beam evaporation at different oxygen partial pressures. The influences of oxygen partial pressure on optical, mechanical and structural properties of TiO2 thin films were studied. The results showed that with the increase of oxygen partial pressure, the optical transmittance gradually increased, the transmittance edge gradually shifted to short wavelength, and the corresponding refractive index decreased. The residual stresses of all samples were tensile, and the value increased as oxygen partial pressure increasing, which corresponded to the evolutions of the packing densities. The structures of TiO2 thin films all were amorphous because deposition particles did not possess enough energy to crystallize. (C) 2007 Elsevier Ltd. All rights reserved.

Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

This paper describes the preparation and the characterization Of Y2O3 stabilized ZrO2 thin films produced by electric-beam evaporation method. The optical properties, microstructure, surface morphology and the residual stress of the deposited films were investigated by optical spectroscopy, X-ray diffraction (XRD), scanning probe microscope and optical interferometer. It is shown that the optical transmission spectra of all the YSZ thin films are similar with those of ZrO2 thin film, possessing high transparency in the visible and near-infrared regions. The refractive index of the samples decreases with increasing of Y2O3 content. The crystalline structure of pure ZrO2 films is a mixture of tetragonal phase and monoclinic phase, however, Y2O3 stabilized ZrO2 thin films only exhibit the cubic phase independently of how much the added Y2O3 content is. The surface morphology spectrum indicates that all thin films present a crystalline columnar texture with columnar grains perpendicular to the substrate and with a predominantly open microporosity. The residual stress of films transforms tensile from compressive with the increasing Of Y2O3 molar content, which corresponds to the evolutions of the structure and packing densities. (C) 2008 Elsevier Ltd. All rights reserved.

Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films

Undoped and Al-, Ga-, and In-doped Bi4Ti3O12 thin films were prepared on fused quartz substrates by chemical solution deposition. Their microstructures and optical properties were investigated by x-ray diffraction and UV-visible-NIR spectrophotometer, respectively. The optical band-gap energies, Urbach energies, and linear refractive indices of all the films are derived from the transmittance spectrum. Following the single oscillator model, the dispersion parameters such as the average oscillator energy (E-0) and dispersion energy (E-d) are achieved. The energy band gap and refractive indices are found to decrease with introducing the dopants of Al, Ga, and In, which is useful for the band-gap engineering and optical waveguide devices. The refractive index dispersion parameter (E-0/S-0) increases and the chemical bonding quantity (beta) decreases in all the films compared with those of bulk. It is supposed to be caused by the nanosize grains in films. (c) 2009 American Institute of Physics. [DOI 10.1063/1.3138813]

Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer

We report the photoluminescence (PL) and structural properties of self-assembled InAs/GaAs quantum dots (QDs) covered by In0.2Al0.8As and In0.2Ga0.8As combination strain-reducing layer (SRL). By introducing a thin InAlAs layer, the ground state emission wavelength redshifts, and the energy splitting between the ground and first-excited states increases to 85 meV at 10 K. The energy splitting further increases to 92 meV and the temperature dependence of full width at half maximum (FWHM) changes for QDs with different SRL after the multi-stacking. These results are attributed to the fact that the combination layer has different effects on QDs compared to the InGaAs SRL.

Magnetic properties of Mn-implanted n-type Ge

Mn+ ions were implanted into n-type Ge(1 1 1) single crystal at room temperature at an energy of 100 keV with a dose of 3 x 10(16) cm(-2). Subsequent annealing was performed on the samples at 400 degreesC and 600 degreesC in a flowing nitrogen atmosphere. The magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. The compositional properties of the annealed samples were studied by Auger electron spectroscopy and the structural properties were analyzed by X-ray diffraction measurements. Magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. The magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (DMS) MnxGe1-x after annealing may account for the ferromagnetic behavior in the annealed samples. (C) 2004 Elsevier B.V. All rights reserved.

Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE

Thick GaN films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The optical and structural properties of large scale columnar do-mains near the interface are studied using cathodoluminescence and micro-Raman scattering. These columnar do-mains Show a strong emission intensity due to extremely high free carrier concentration up to 2 x 10(19) cm(-3), which are related with impurities trapped in structural defects. The compressive stress in GaN Elm clearly decreases with increasing distance from interface. The quasi-continuous columnar domains play an important role in the stress relaxation for the upper high quality layer.

The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers

To fabricate nitride-based ultraviolet optoelectronic devices, a deposition process for high-Al-composition AlGaN (Al content > 50%) films with reduced dislocation densities must be developed. This paper describes the growth of high-Al-composition AlGaN film on (0001) sapphire via a LT AIN nucleation layer by low pressure metalorganic chemical vapor deposition (LPMOCVD). The influence of the low temperature AIN buffer layer thickness on the high-Al-content AlGaN epilayer is investigated by triple-axis X-ray diffraction (TAXRD), scanning electron microscopy (SEM), and optical transmittance. The results show that the buffer thickness is a key parameter that affects the quality of the AlGaN epilayer. An appropriate thickness results in the best structural properties and surface morphology. (c) 2006 Elsevier B.V. All rights reserved.

Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon

Hydrogenated silicon (Si:H) films near the threshold of crystallinity were prepared by very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) using a wide range of hydrogen dilution R-H = [H-2]/[SiH4] values of 2-100. The effects of H dilution R-H on the structural properties of the films were investigated using micro-Raman scattering and Fourier transform infrared (FTIR) absorption spectroscopy. The obtained Raman spectra show that the H dilution leads to improvements in the short-range order and the medium-range order of the amorphous network and then to the morphological transition from amorphous to crystalline states. The onset of this transition locates between R-H = 30 and 40 in our case, and with further increasing R-H from 40 to 100, the nanocrystalline volume fraction increases from similar to23% to 43%, and correspondingly the crystallite size enlarges from similar to2.8 to 4.4 nm. The FTIR spectra exhibit that with R-H increasing, the relative intensities of both the SiH stretching mode component at 2100 cm(-1) and wagging mode component at 620 cm(-1) increase in the same manner. We assert that these variations in IR spectra should be associated with the formation of paracrystalline structures in the low H dilution films and nanocrystalline structures in the high H dilution films. (C) 2003 Elsevier Science B.V. All rights reserved.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750 degrees C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation (C) 1998 Elsevier Science B.V. All rights reserved.

纳米／微米结构氧化物材料的水热合成、形貌与发光性质研究

采用水热法结合后续热处理制备了一系列纯的和稀土离子（Eu3＋，Dy3＋）掺杂的黔具有纳米／微米结构的无机氧化物材料，包括YB03、姚03、Ga203和硅基MCM一攀41介孔分子筛体系。研究了这些体系的水热产物的晶体形貌、结构以及它们的生乖～一＿长机理，并通过进一步热处理得到了保持水热产物纳米／微米结构形貌的发光材料，报道了以上各个体系材料的光致发光性能。一把姚03和Eu203粉末直接加入H3Bo3水溶液中，调节pH一1一4，在180一270夸＿少℃水热处理得到了具有vaterite结构的YBo3：Eu3＋晶体。xRD和FEsEM结果证明一扭03：E矿"晶体是由厚度小于50nm的纳米晶片构成的花状和猴头菇状的微米级晶丫体。水热温度提高时纳米晶片的厚度没有增加，形貌也不变，但是结晶度和发光一强度有所提高。pH值对纳米晶片之间的距离、角度和晶片数量有影响。pH低时，纳米晶片更多且包裹得更紧，形成了猴头菇状；而pH高时，晶片分得更开一些呈花朵状。这与pH值低时结晶成核较快较多有关。YB03：E矿＋水热和固相法样品在24Onm激发下的发光谱峰位相同。但水热样品比固相法样品具有较高的红橙比［Eu3＋：I（，D。一7F2）／I（SD。一7FI）］，增加了12一37％。在24oC下制备的花03：Eu3＋水热样品具有最大的结晶度和发光强度。报道了三种晶形调节剂对水热晶体形貌的影响结果。硝酸钻水溶液用氨水调节至pH一8一n，200oC下水热处理24小时，产物经xRD确定是单斜晶系的碱式硝酸盐叽O（0H）9困03）。FEsEM观察发现产物是一种具有几＿三叶形截面的棱柱。改变合成条件可以调节三叶形棱柱的尺寸。增加氨水量时，PH从8调到n后，棱柱直径可从微米级调节到亚微米级，即从3一5林m左右下降到200一300纳米，同时长径比也有所增加，从pH一8的5增加到pH＝n的10。调节机制可解释为较高的pH条件下结晶成核作用进行较快，形成了更多的晶核。三叶形棱柱的生长机理是、O（OH）9困03）的晶核依靠内在的趋势长成棒状纳米粒子；并通过一种直接的聚集生长，这些起始的纳米棒沿着它们横截面的径向方向快速自堆积成一种Y型结构的棒束；然后沿着棱柱轴向和平行于棱柱叶片方向的晶面同时优先生长，而垂直于叶片方向上的晶面生长得相对缓慢，导致三叶形棱I、－纳米／微米结构氧化物材料的水热合成、形貌与发光性质研究柱的形成。、经过高温相转变得到了姚03三叶形棱柱。采用同样方法可以制得姚03：E矿＋的三叶形棱柱发光粉，其光谱与固相法样品的一致。将Gacl3一HZO一NaOH体系在pH＝6一8时于180℃下水热处理得到了正交晶系的Gao0H晶体，其形貌分别是宽度在200一30Onm之间长径比约1：7的四方棱柱（pH＝6）和长径比约1：3纺锤状的纳米棒束（pH＝8）。使用HZO／DEG混合溶剂可以增加棱柱的长径比，1：Ivol时增加到1：15；1：Zvol时获得的是长达几十微米的四方棱柱纳米线6Go0OH纳米棒是从最初的胶状沉淀中成核后沿着c轴优先生长而成的。pH值的高低可导致Ga0OH晶体从四方棱柱到纳米棒束的不同形貌。DEG的存在对晶体的生长可能有两点作用：一是抑制晶核形成；二是降低晶体沿着横截面晶面的生长速度。经过高温锻烧的产物是保持着前驱体形貌的p一GaZO3晶体。254nm激发下p一GaZO3纳米棒的发射谱是从300nm到600nln的宽峰，最大值在455nln。发光的平均寿命是64ns。其蓝光发射起源于氧空位给体提供的电子和来自受体嫁空位或者嫁氧空位对的空穴之间的复合。采用相似方法制备了p一GaZO3：Dy纳米棒束，并与固相法样品对比了光谱性质的异同。将三种5102基材料：MCM一41型分子筛（直接分子筛CMS和萃取分子筛EMS）、无规颗粒（ASP）和干凝胶（SG）进行从室温到1000℃的不同温度不同时间热处理。254nm激发下，MCM一41没有发光现象。而ASP和SG系列样品随着热处理温度不同而显示不同的PL。说明ASP和SG与MCM一41有着不同的发光机理。排除了ASP和SG样品的发光中心是来自5102网络本身的结构缺陷，认为是其中所含有机物在热处理中产生的碳杂质引起。结果也表明MCM41中模板剂在热处理的碳化产物并没有引起MCM一41的PL。在365nm激发下，MCM一41与ASP、SG的PL现象大致相同。表明所有系列的样品的发光机理相同。CMS和EMS两个系列在300℃以上处理的样品的PL相似，说明模板剂的存在及其碳化并没有影响MCM一41的PL。所有系列样品在365nm激发下的PL认为是起源于5102网络中与氧相关的结构缺陷三Si一0．，而不是碳掺杂作用引起的。

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Mechanical and structural characteristics of phenolphthalein poly(ether sulfone) ultra-high molecular weight polyethylene blends

Mechanical and structural properties of blends of phenolphthalein poly(ether sulfone) (PBS-C) with ultra-high molecular weight polyethylene (UHMWPE) were investigated using tensile and bending testing, scanning electron microscopy and transition electron microscopy. The incorporation of minor amounts of UHMWPE (2 wt.-%) into PES-C has a reinforcement effect. With higher concentrations of UHMWPE, the mechanical properties decrease gradually. Structural studies demonstrated that the blends are multiphasic in the whole composition range. The minor UHMWPE, dispersed uniformly and oriented along the flow direction, as well as the strong interfacial adhesion contribute to the increase of the mechanical performance of the blends. The domain size of the UHMWPE phase was found to increase with the increase of its concentration.