一种优化初始中心点的K平均文本聚类算法

文本聚类在信息过滤,网页分类中有着很好的应用。但它面临数据量大,特征维度高的难点。由于K平均算法易于实现,对数据依赖度底,在文本聚类中得到应用。然而,传统K平均以及它的变种会产生有较大波动的聚类结果。因此对K平均算法进行了改进,通过优化聚类初始中心的选择,得到一种适合对文本数据聚类分析的改进算法。大量实验显示,该算法可以生成质量较高而且聚类质量波动性较小的结果。

Experimental study on K alpha X-ray emission from intense femtosecond laser-solid interactions

The characteristics of K alpha X-ray sources generated by p-polarized femtosecond laser-solid interactions are experimentally studied in the relativistic regime. By use of knife-edge image technique and a single-photon-counting X-ray CCD camera, we obtaine the source size, the spectrum and the conversion efficiency of the Ka X-ray sources. The experimental results show that the conversion efficiency of Ka photons reaches an optimum value of 7.08 x 10(-6)/sr at the laser intensity of 1.6 x 10(18) W/cm(2), which is different from the Reich's simulation results (Reich et al., 2000 Phys. Rev. Lett. 84 4846). We find that about 10% of laser energy is converted into the forward hot electrons at the laser intensity of 1.6 x 10(18) W/cm(2).

新型绿色荧光体ABLa(PO_4)_2:Ce, Tb研究(A = K, Na; B = Mg, Zn)

本工作完成了磷酸盐化合物ABLa(PO_4)_2的合成，这些磷盐均可在900 ℃左右合成；对其进行了结构测试与表征，发现这些磷酸盐属于单斜晶系独居石结构，与LaPO_4同构，具有很相近的晶胞参数；系统地研究了RE~(3+)离子(RE = Ce,Tb,Dy)在ABLa(PO_4)_2基质中的发光与能量传递规律，研究了Ce~(3+)、Tb~(3+)离子发光中心与基质晶格之间的相互作用，计算了这些稀土离子之间能量传递的临界距离Rc(dd)，结果表明ABLa(PO_4)_2基质中Ce~(3+)离子与基质晶格之间的相互作用属于中等程度耦合，Tb~(3+)离子与基质晶格之间的相互作用属于无辐射多声子过程，Ce~(3+)→Ce~(3+)、Ce~(3+)→Tb~(3+)能量迁移临界距离均与LaPO_4中相近，Ce~(3+) → Ce~(3+)相对于Ce~(3+) → Tb~(3+)属于快过程，Ce~(3+) → Ce~(3+)能量传递对ABLa(PO_4)_2:Ce,Tb荧光体的Tb~(3+)绿色发光起了重要的作用，ABLa(PO_4)_2基质是Ce~(3+)，Ce~(3+)-Tb~(3+)，Ce~(3+)-Dy~(3+)的优良发光基质；最后探讨了绿色荧光体ABLa(PO_4)_2:Ce，Tb的调制途径，主要研究了Ce~(3+)、Tb~(3+)离子的浓度效应，掺杂B_2O_3、Dy~(3+)、SiO_2对荧光体发光的影响及NH_4Cl的作用，结果表明Ce~(3+)、Tb~(3+)离子的适宜浓度分别为0.2～0.5和0.08～0.2，掺杂适量的B_2O_3、Dy~(3+)能很好地提高荧光体的发光，掺杂SiO_2、NH_4Cl不利荧光体发光。

Ras 超家族蛋白的起源演化研究

Ras 超家族蛋白是真核生物中普遍存在的一类小分子GTP 结合蛋白。它们 具有高度保守的GTP 结合结构域，根据序列结构和细胞功能被分为七个家族： Sar1、Arf、SRβ、Ran、Rab、Rho 和Ras。这些蛋白分别行使着真核生物特有的 细胞功能，诸如运输小泡的形成和转运（Sar1、Arf、Rab），胞质骨架的建成（Rho）， 细胞核-胞质运输及核膜重建（Ran）等，其起源演化和真核细胞的起源密切相关。 本文利用生物信息学手段和分子生物学实验调查研究了原核生物和原生生物中 Ras 超家族蛋白同源物的存在情况，并进行了分子系统分析，对Ras 超家族蛋白 的起源演化问题进行了较为深入、系统的探讨。获得了以下结果和结论： 1）通过原核生物基因组的搜索和序列结构分析，在一些真细菌中首次鉴定 出了高度相似于真核生物Ras 超家族蛋白的原核生物同源物，且实验证明它们的 基因具有表达活性；在原细菌中的产甲烷菌和热原体中也发现有序列分歧较大的 同源物。并在更多的真细菌种类中鉴定出了更多的前人已报道的另一种小分子 GTP 结合蛋白—MglA。序列比对分析表明MglA 蛋白具有自己独特的序列特征， 与真核生物的Ras 超家族蛋白序列差异较大。进一步的分子系统分析显示：真核 生物Ras 超家族蛋白的七个家族中，Ran、Rab、Rho 和Ras 等四个家族聚在一 起，上述我们所鉴定的真细菌的Ras 超家族蛋白同源物则紧聚在其外围；真核生 物的另三个家族（Sar1、Arf、SRβ）聚成另一枝，并接着与产甲烷原细菌的的同 源物及真细菌的MglA 蛋白聚在一起。这些结果表明：Ras 超家族蛋白不是前人 所认为的为真核生物所特有，实际上在一些原核生物中就已产生；真核生物Ras 超家族蛋白的祖先也不太可能是前人所认为的为真细菌的MglA；真核生物Ras 超家族蛋白的七个家族可能有两种不同的起源：Ran、Rab、Rho 和Ras 等可能 来源于蓝细菌或蛋白菌，或二者的共同祖先，而Sar1、Arf 和SRβ 可能来源于产 甲烷原细菌，这也可能反映了真核细胞“融合起源”的历史。 2）通过搜索一些较为低等的单细胞真核生物——原生生物基因组中Ras 超 家族蛋白，并结合一系列其他处在不同进化地位真核生物的Ras 超家族蛋白进行 分析，发现Sar1、Arf、Rab 和Ran 家族的蛋白在真核生物中普遍存在，而SRβ、 Rho 和Ras 家族蛋白在有些真核生物中未找到。根据各家族蛋白在真核生物中的分布情况推测在真核生物的最近共同祖先中存在的Ras 超家族蛋白可能有下列 两种情况：（1）最近的共同祖先已经具有了所有七个家族的蛋白，并且至少有 11 个成员：1 个Sar1、1 个SRβ、3 个Arf（Arf1、Arl1、Arl2）、3 个Rab（Rab1、 Rab6、Rab11）、1 个Ran、1 个Rho（Rac）和1 个Ras（RheB）。因而，部分真 核生物中缺少SRβ、Rho 和Ras 家族蛋白很可能是因基因丢失所致。植物中Ras 家族蛋白的缺少应该是由于在进化早期，其祖先绿藻丢失了单个Ras 家族蛋白基 因所致；（2）根据Cavalier-Smith 的真核生物划分为单鞭毛（变形虫类、真菌和 后生动物）和双鞭毛（藻类、植物和除变形虫外的原生动物）两大类的分类观点， 真核生物最近的共同祖先可能只具有除Ras 家族而外的六个家族的成员，而Ras 家族蛋白则是在此两大类群分化以后在单鞭毛类生物中才产生的，多数双鞭毛类 生物如原生动物、绿藻和植物中没有Ras 的情况应该是一种祖征，而个别双鞭毛 类生物如红藻具有的Ras 家族蛋白则很可能是从单鞭毛类生物那里水平基因转 移而来的。至于SRβ 和Rho 家族蛋白在部分物种中的缺少，则还是可能因为基 因丢失所致。此外，变形虫类生物中大量的Ras 超家族蛋白提示基因组的大小或 进化地位的高低并不是Ras 超家族蛋白成员多少的决定性因素，而细胞相应生理 活动的需求才是家族成员增多的关键。

ELECTRONIC-STRUCTURES OF THE ALKALI-CONTAINING BUCKMINSTERFULLERENES (A-DELTA-C60) (A=LI,NA,K,RB,CS) AND THE HALOGEN-CONTAINING BUCKMINSTERFULLERENES (H-DELTA-C60) (H=F,CL,BR,I)

The geometrical parameters and electronic structures of C60, (A partial derivative C60) (A = Li, Na, K, Rb, Cs) and (H partial derivative C60) (H = F, Cl, Br, I) have been calculated by the EHMO/ASED (atom superposition and electron delocalization) method. When putting a central atom into the C60 cage, the frontier and subfrontier orbitals of (A partial derivative C60) (A = Li, Na, K, Rb, Cs) and (H partial derivative C60) (H = F, Cl) relative to those of C60 undergo little change and thus, from the viewpoint of charge transfer, A (A = Li, Na, K, Rb, Cs) and H (H = F, Cl) are simply electron donors and acceptors for the C60 cage resPeCtively. Br is an electron acceptor but it does influence the frontier and subfrontier MOs for the C60 cage, and although there is no charge transfer between I and the C60 cage, the frontier and subfrontier MOs for the C60 cage are obviously influenced by I. The stabilities DELTAE(X) (DELTAE(X) = (E(X) + E(C60)) - E(x partial derivative C60)) follow the sequence I < Br < None < Cl < F < Li < Na < K < Rb < Cs while the cage radii r follow the inverse sequence. The stability order and the cage radii order have been explained by means of the (exp-6-1) potential.

THIN-FILM BIPBSRCACUO DIRECT-CURRENT SUPERCONDUCTING QUANTUM INTERFERING DEVICES OPERATING AT 78-K

Direct current SQUIDs (superconducting quantum interference devices) have been successfully fabricated by using a Pb-doped BiSrCaCuO superconducting thin film made by mixed evaporation of a single source composed of related components with a resistance heater. The dc SQUID comprises a square washer with a small hole. These SQUIDs show perfectly periodic voltage-flux characteristics without magnetic shield, that is, typically, the flux noise and energy resolution at a frequency range from dc to 1 Hz and at 78 K being 1.7 x 10(-3) PHI-0/ square-root Hz and 3.6 x 10(-26) J/Hz, respectively. Meanwhile, we have found out that one of the SQUIDs still was able to operate on flux-locked mode without bias currents and showed voltage-flux second harmonic characteristics. This phenomenon is not well understood, but it may be related to I-V (current-voltage) characteristics of the dc SQUID.

Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

A new technique is reported for the rapid determination of interstitial oxygen in heavily Sb-doped silicon. This technique includes wafer thinning and low-temperature 10 K infrared measurement on highly thinned wafers. The fine structure of the interstitial oxygen absorption band around 1136 cm(-1) is obtained. Our results show that this method efficiently reduces free-carrier absorption interference, allowing a high reliability of measurement, and can be used at resistivities down to 1 x 10(-2) Omega cm for heavily Sb-doped silicon.

New aspects of K promoted nitridation of the InP(100) surface

The effect of molecular nitrogen exposure on the InP(100) surface modified by the alkali metal K overlayer is investigated by core-level photoemission spectroscopy using synchrotron radiation. The alkali metal covered surface exhibits reasonable nitrogen uptake at room temperature, and results in the formation of a P3N5 nitride complex. Flash annealing at 400 degrees C greatly enhanced the formation of this kind of nitride complex. Above 500 degrees C, the nitride complex dissolved completely. (C) 1997 American Vacuum Society.

PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION AND OXIDATION OF THE INP(100) SURFACE USING SYNCHROTRON-RADIATION

The effect of a potassium overlayer on nitridation and oxidation of the InP(100) surface is investigated by core-level and valence-band photoemission spectroscopy using synchrotron radiation. In comparison with the K-promoted nitridation of the InP(110) surface obtained by cleavage in situ, we found that the promotive effect for the InP(100) surface cleaned by ions bombardment is much stronger and that the nitridation products consist of two kinds of complexes: InPNx and InPNx+y. The results confirmed that surface defects play an important part in the promotive effect. Furthermore, in contrast with K-promoted oxidation of InP(100) where bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100). (C) 1995 American Vacuum Society.

PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION OF INP(100) SURFACE USING SYNCHROTRON-RADIATION

The effect of molecular nitrogen exposure on the surfaces of InP(100) modified by potassium overlayers is investigated by core-level and valence-band photoemission spectroscopy using Synchrotron radiation. In comparison with InP(110) surface, we found the promotion is much stronger for InP(100) surface due to the central role of surface defects in the promotion; furthermore, in contrast with K-promoted oxidation of InP(100) where the bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100).

光纤位移传感器在77和4.2 K下的输出特性研究

介绍了一种可用于低温装置内的补偿式光纤位移传感器(CFODS),讨论了该传感器在低温下的输出特性并在液氮温度(77 K)和液氦温度(4.2 K)下进行了实验研究.结果表明,该传感器在液氮温度下的灵敏度0.311 mm~(-1),高于液氦温度下的灵敏度0.278 mm~(-1).

VLSI architecture of a K-best detector for MIMO--OFDM wireless communication systems

The K-best detector is considered as a promising technique in the MIMO-OFDM detection because of its good performance and low complexity. In this paper, a new K-best VLSI architecture is presented. In the proposed architecture, the metric computation units (MCUs) expand each surviving path only to its partial branches, based on the novel expansion scheme, which can predetermine the branches' ascending order by their local distances. Then a distributed sorter sorts out the new K surviving paths from the expanded branches in pipelines. Compared to the conventional K-best scheme, the proposed architecture can approximately reduce fundamental operations by 50% and 75% for the 16-QAM and the 64-QAM cases, respectively, and, consequently, lower the demand on the hardware resource significantly. Simulation results prove that the proposed architecture can achieve a performance very similar to conventional K-best detectors. Hence, it is an efficient solution to the K-best detector's VLSI implementation for high-throughput MIMO-OFDM systems.

二元高－k材料研究进展及制备

随着大规模集成电路的发展，需要一种高介质材料来代替传统的SiO2,介绍了可能替代SiO2的几种二元材料的研究现状，主要包括Si3N4,Ta2O5,TiO2,ZrO2,Y2O3,Gd2O3和CeO2几种材料的结构和电学性能，以及制备薄膜的几种方法；蒸发法，化学气相沉积和离子束沉积。

室温下InP（100）表面K诱发催化氮化反应的同步辐射光电子能谱研究

于2010-11-23批量导入

K对InP（100）表面催化氧化反应的同步辐射光电子能谱研究

国家自然科学基金