Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in mainland China. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.

A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator

A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating asimple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic "and" function with differ-ent load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinc-tion ratio of over 7dB with a 950Ω load resistor and a 7mW control light power at 622Mbit/s.

Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach

Monolithic electro-absorption modulated distributed-feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0.5V to 3.0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1.5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.

Monolithic Integration DFB Laser Array by Angling Active Stripe and Using Thin-Film Stripe Heater

国家863计划

Photonic AND Gate Based on Hybrid Integration of GaAs VCSEL and GaAs MISS

于2010-11-23批量导入

Monolithic Integration of DFB Laser Diode and Electroabsorption Modulator by Selective Area Growth Technology

国家863计划

Monolithic Integration of MQW DFB Laser and EA Modulator in 1.55μm

国家863计划

Surface transformation and inversion domain boundaries in gallium nitride nanorods

Phase transformation and subdomain structure in [0001]-oriented gallium nitride (GaN) nanorods of different sizes are studied using molecular dynamics simulations. The analysis concerns the structure of GaN nanorods at 300 K without external loading. Calculations show that a transformation from wurtzite to a tetragonal structure occurs along {0110} lateral surfaces, leading to the formation of a six-sided columnar inversion domain boundary (IDB) in the [0001] direction of the nanorods. This structural configuration is similar to the IDB structure observed experimentally in GaN epitaxial layers. The transformation is significantly dependent on the size of the nanorods.

Helium isotope investigation on magnetic reversal boundaries of loess-paleosol sequence at Luochuan；central Chinese Loess Plateau

IEECAS SKLLQG

长时间电流积分数字仪的设计；The development of a long-time current integration digitizer

本文介绍的长时间电流积分数字仪,是用电流-频率(I-F)转换电路将微弱电流转换成脉冲信号,结合后级脉冲计数器及处理控制电路,实现对10pA-10μA量级输入电流的长时间测量。该仪器可用于电离室、法拉第筒等输出电流或电荷的测量,测量时间范围1s-192h。该电路的设计实现,为长时间测量电流或电荷,并进行束流监测提供了一种可行、通用、高性价比的好方法。