Crystallization behavior of blends of high-density polyethylene with novel linear low-density polyethylene

Blends of high-density polyethylene (HDPE) with novel linear low-density polyethylene (LLDPE) samples in the whole range of compositions were investigated by means of differential scanning calorimetry (DSC), small-angle X-ray scattering (SAXS) and wide-angle X-ray diffraction (WAXD). The LLDPEs are ethylene/octene-1 copolymers prepared with a single-site catalyst, with a narrower distribution of branches compared to Ziegler-Natta type polymers. It was found that cocrystallization or separate crystallization in the blends profoundly depends on the content of branches in the LLDPE, while the critical branch content of the novel LLDPE for separate crystallization is much lower than that of commercial LLDPE (prepared with Ziegler-Natta catalysts). This implies that the miscibility of linear and branched polyethylene is also affected by the distribution of branches. The marked expansion of the unit cell in cocrystals, which are formed by HDPE with the novel LLDPE, indicates that the branches are included in the crystal lattice during the cocrystallization process. The result is very helpful to understand the phenomenon that the unit cell dimensions of commercial branched polyethylene are larger than those of linear polyethylene.

COMPATIBILIZATION OF HIGH-DENSITY POLYETHYLENE/POLYISOPRENE BLENDS WITH POLYETHYLENE/POLYISOPRENE THREAD-THROUGH COPOLYMERS

The compatibilization of high density polyethylene (HDPE)/polyisoprene (PI) blends with polyethylene/polyisoprene (PE/PI) ''thread-through'' copolymers was investigated. The proliferating structure of PE/PI with segments chemically identical to HDPE and PI, respectively, is different from that of graft copolymers. Studies showed that the dispersed domain size in the blends was significantly reduced and interfacial adhesion was improved by the compatibilization action of the copolymer. In the differential scanning calorimetry (DSC) analysis, the crystallization peak of HDPE in the blends became broad with adding the copolymer and fractionated crystallization appeared in the HDPE/PI blend compatibilized with the copolymer at a weight ratio of 30/70 while it appeared in the blend without copolymer at a weight ratio of 20/80. DMA results showed that by adding the copolymer, both the glass transition temperature (T-g) of the PI component and the alpha-relaxation of HDPE shifted to lower temperature, demonstrating the enhanced penetration of the two components. Mechanical properties of the blends were improved, especially the elongation at break, by the presence of the copolymers. The characteristic yielding at the fractured surface of the blends compatibilized with the copolymer indicates the fractural behavior of the material changed from brittle to tough.

STRUCTURE AND PROPERTIES OF MALEATED HIGH-DENSITY POLYETHYLENE

Possible changes in the structure and properties of maleated polyethylene (HDPE-MA) at different degrees of grafting (D.G.) were examined. At the level of 1.6 maleic anhydride (MA)/100 ethylene units E, 70-80% of crystallinity of the parent PE was retaine

EPITAXIAL CRYSTALLIZATION OF HIGH-DENSITY POLYETHYLENE ON POLYPROPYLENE IN SOLUTION-CAST FILMS

Epitaxial crystallization of high-density polyethylene (HDPE) on isotactic polypropylene (iPP) in solution-cast films has been investigated by electron microscopy. The specimen-tilt technique of electron microscopy has been used to study the structural relationship between HDPE and iPP crystals. HDPE exhibits different crystalline morphologies in the two basic types of iPP spherulite textures, cross-hatched and lathlike regions. In the former, the crystallographic c axis of HDPE lamellae is in the film plane, while in the latter, the c axis of HDPE crystallites is at an angle of about 50-degrees with the normal of the film. In both structural regions of iPP, however, the contact planes of epitaxial growth are (0 1 0) for iPP and (1 0 0) for HDPE.

STUDY ON POLYANILINE FILM WITH HIGH-DENSITY AND HIGH MECHANICAL STRENGTH

Free-standing film of polyaniline with excellent mechanical and electrical properties has been successfully prepared by using the solution-casting method. The results show that its tensile strength, Young's modulus and elongation at break are about 87.9 MPa, 1563.9 MPa and 10.2%, respectively. It is essential that the soluble polyaniline should be appropriately treated in some suitable organic solvents before making a free-standing film. Films having lustrous, smooth surface, high density and good flexibili...

Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density

In this report, we have investigated the temperature and injection power dependent photoluminescence in self-assembled InAs/GaAs quantum dots (QDs) systems with low and high areal density, respectively. It was found that, for the high-density samples, state filling effect and abnormal temperature dependence were interacting. In particular, the injection power-induced variations were most obvious at the temperature interval where carriers transfer from small quantum dots (SQDs) to large quantum dots (LQDs). Such interplay effects could be explained by carrier population of SQDs relative to LQDs, which could be fitted well using a thermal carrier rate equation model. On the other hand, for the low density sample, an abnormal broadening of full width at half maximum (FWHM) was observed at the 15-100 K interval. In addition, the FWHM also broadened with increasing injection power at the whole measured temperature interval. Such peculiarities of low density QDs could be attributed to the exciton dephasing processes, which is similar to the characteristic of a single quantum dot. The compared interplay effects of high-and low-density QDs reflect the difference between an interacting and isolated QDs system.

Direct acceleration of solid-density plasma bunch by ultraintense laser

The interaction of a petawatt laser with a small solid-density plasma bunch is studied by particle-in-cell simulation. It is shown that when irradiated by a laser of intensity >10(21) W/cm(2), a dense plasma bunch of micrometer size can be efficiently accelerated. The kinetic energy of the ions in the high-density region of the plasma bunch can exceed ten MeV at a density in the 10(23)-cm(-3) level. Having a flux density orders of magnitude higher than that of the traditional charged-particle pulses, the laser-accelerated plasma bunch can have a wide range of applications. In particular, such a dense energetic plasma bunch impinging on the compressed fuel in inertial fusion can significantly enhance the nuclear-reaction cross section and is thus a promising alternative for fast ignition.

High-efficiency diffraction gratings in fused silica at the wavelength of 632.8 nm

We describe high-efficiency diffraction gratings fabricated in fused silica at the wavelength of 632.8 nm by rigorous coupled-wave analysis (RCWA). High-density holographic gratings, if the groove density falls within the range of 1575-1630 lines/mm and the groove depth within the range of 1.1-1.3 microns, can realize high diffraction efficiencies at the wavelength of 632.8 nm, e.g., the first Bragg diffraction efficiency can theoretically achieve more than 93% both in TE- and TM-polarized incidences, which greatly reduces the polarization-dependent losses. Note that with different groove profiles further optimized, the maximum efficiency of more than 99.69% can be achieved for TM-polarized incidence, or 97.81% for TE-polarized incidence.

High focal depth with a pure-phase apodizer

High-density optical data storage requires high-numerical-aperture (NA) lenses and short wavelengths, But, with increasing NA and decreasing wavelength, the depth of focus (DOF) decreases rapidly. We propose to use pure-phase superresolution apodizers to optimize the axial intensity distribution and extend the DOF of an optical pickup. With this kind of apodizer, the expected DOF can be 2-4.88 times greater than that of the original system, and the spot size will be smaller than that of the original system. (C) 2001 Optical Society of America.

Blue emission from Eu2+ -doped high silica glass by near-infrared femtosecond laser irradiation

Eu2+-doped high silica glass (HSG) is fabricated by sintering porous glass which is impregnated with europium ions. Eu2+-doped HSG is revealed to yield intense blue emission excited by ultraviolet (UV) light and near-infrared femtosecond laser. The emission profile obtained by UV excitation can be well traced by near-infrared femtosecond laser. The upconversion emission excited by 800 nm femtosecond laser is considered to be related to a two-photon absorption process from the relationship between the integrated intensity and the pump power. A tentative scheme of upconverted blue emission from Eu2+-doped HSG was also proposed. The HSG materials presented herein are expected to find applications in high density optical storage and three-dimensional color displays. (c) 2008 American Institute of Physics.

High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region

High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

Silicon doping induced increment of quantum dot density

Low-indium-content self-assembled InGaAs/GaAs quantum dots (SAQD) were grown using solid-source molecular beam epitaxy (MBE) and investigated by atomic force microscopy and photoluminescence (PL) spectroscopy. Silicon, which was doped at different quantum dot (QD) growth stages, markedly increased the density of QD. We obtained high density In0.35Ga0.65As/GaAs(001) quantum dots of 10(11)/cm(2) at a growth temperature of 520degreesC. PL spectra and distribution statistics show the high quality and uniformity of our silicon-doped samples. The density increment can be explained using the lattice-hardening mechanism due to silicon doping.

Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates

The effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have been investigated by molecular beam epitaxy (MBE). A comparison between atomic force microscopy (AFM) and photoluminescence (PL) spectra shows that a high density of smaller InAs islands can be obtained by using such high index substrates. On the other hand, by introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs can be much more uniform in size and have a great improvement in PL properties. More importantly, 1.55-mu m luminescence at room temperature (RT) can be realized in InAs QDs deposited on (001) InP substrate with underlying In0.52Al0.24Ga0.24As layer. (C) 2000 Elsevier Science B.V. All rights reserved.