Second-harmonic generation in Ge20As25S55 glass irradiated by an electron beam

Second-harmonic generation was observed in Ge(20)AS(25)S(55) chalcogenide glass irradiated by an electron beam. The second-harmonic intensity increased with increasing electron-beam current and accelerating voltage. The second-harmonic generation in Ge20As25S55 glass was caused by the space-charge electrostatic field that was generated by irradiation of an electron beam. Second-order nonlinearity chi ((2)) as great as 0.8 pm/V was obtained. The results of measurements of thermally stimulated depolarization current indicated that the glass was poled in the thin layers of its surface (several micrometers) and that the nonlinearity was stable. (C) 2001 Optical Society of America.

Photoinduced stable second-harmonic generation in chalcogenide glasses

We report on photoinduced second-harmonic generation (SHG) in chalcogenide glasses. Fundamental and second-harmonic waves from a nanosecond pulsed Nd:YAG laser were used to induce second-order nonlinearity in chalcogenide glasses. The magnitude of SHG in 20Ge . 20As . 60S glass was 10(4) larger than that of tellurite glass with a composition of 15Nb(2)O(5) . 85TeO(2) (mol.%). Moreover, no apparent decay of photoinduced SHG in 20Ge . 20As . 60S glass was observed after optical poling at room temperature. We suggest that the large and stable value of X-(2) is due to the induced defect structures and large X-(3) of the chalcogenide glasses. (C) 2001 Optical Society of America

Newly designed multilayer thin film mirror for dispersion compensation in Ti:sapphire femtosecond lasers

There are two different effects to generate group delay dispersion by multilayer thin film mirrors: chirper effect and Gires-Tournois effect. Both effects are employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti:sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti:sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.

Compensation of reflectance response deviations of guided-mode resonant filters induced by overetching fabrication

Unless the fabrication error control is well treated, it easily causes overetched fabrication errors, which causes the resonant peak value deviation during the fabrication process of guided-mode resonant filters (GMRFs). Hence, the fabrication error control becomes a key point for improving the performance of GMRF. We find that, within the range of the groove depth from 93 to 105 nm, the relationship between the overetched error and the resonant peak value deviation is nearly linear, which means that we can compensate the reflectance response deviation and reduce the resonant peak value deviation by the method of covering the layer film on the GMRF. Simulation results show that the deviation is compensated perfectly by this way. (C) 2008 Optical Society of America

Development of Swept Frequency Method for Measuring Frequency Response of Photodetectors Based on Harmonic Analysis

We develop a swept frequency method for measuring the frequency response of photodetectors; (PDs) based on harmonic analysis. In this technique, a lightwave from a laser source is modulated by a radio-frequency (RF) signal via a Mach-Zehnder LiNbO3 modulator, and detected by a PD under test. The measured second-order harmonic of the RF signal contains information of the frequency responses and nonlinearities of the RF source, modulator, and PD. The frequency response of the PD alone is obtained by deducting the known frequency responses and nonlinearities of the RF source and modulator. Compared with the conventional swept frequency method, the measurement frequency range can be doubled using the proposed method. Experiment results show a good agreement between the measured results and those obtained using other techniques.

Coulomb blockade double-dot Aharonov-Bohm interferometer: Harmonic decomposition of the interference pattern

For the solid-state double-dot interferometer, the phase shifted interference pattern induced by the interplay of inter-dot Coulomb correlation and multiple reflections is analyzed by harmonic decomposition. Unexpected result is uncovered, and is discussed in connection with the which-path detection and electron loss. (C) 2009 Elsevier B.V. All rights reserved.

FBG pressure sensor based on the double shell cylinder with temperature compensation

A novel fiber Bragg grating (FBG) pressure sensor based on the double shell cylinder with temperature compensation is presented. in the sensing scheme, a sensing FBG is affixed in the tangential direction on the outer surface of the inner cylinder, and another FBG is affixed in the axial direction to compensate the temperature fluctuation. Based on the theory of elasticity, the theoretical analysis of the strain distribution of the sensing shell is presented. Experiments are carried out to test the performance of the sensor. A pressure sensitivity of 0.0937 nm/MPa has been achieved. The experimental results also demonstrate that the two FBGs have the same temperature sensitivity, which can be utilized to compensate the temperature induced wavelength shift during the pressure measurement. (C) 2008 Elsevier Ltd. All rights reserved.

Second-harmonic generation of Bogoliubov excitations in a two-component Bose-Einstein condensate

A second-harmonic generation (SHG) is predicted for the Bogoliubov excitations in a two-component Bose-Einstein condensate. It is shown that, because the linear dispersion curve of the excitations displays two branches, the phase-matching condition for the SHG can be fulfilled if the wave vectors and frequencies of fundamental and second-harmonic waves are selected suitably from different branches. The nonlinearly coupled envelope equations for the SHG are derived by using a method of multiple scales. The explicit solutions of these envelope equations are provided and the conversion efficiency of the SHG is also discussed.

Influence of deep level defects on electrical compensation in semi-insulating InP materials

In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating ( SI) materials prepared by Fe-doping and high temperature annealing of undoped InP. Influence of deep level defects in the SI-InP materials on the electrical compensation has been studied thermally stimulated current spectroscopy (TSC). Electrical property of the Fe-doped SI-InP is deteriorated due to involvement of a high concentration of deep level defects in the compensation. In contrast, the concentration of deep defects is very low in high temperature annealed undoped SI-InP in which Fe acceptors formed by diffusion act as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance. A more comprehensive electrical compensation model of SI-InP has been given based on the research results.

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.

Bonding-wire compensation effect on the packaging parasitics of optoelectronic devices

The effect of bonding-wire compensation on the capacitances of both the submount and the laser diode is demonstrated in this paper. The measured results show that the small-signal magnitude-frequency responses of the TO packaged laser and photodiode modules can be improved by properly choosing the length of the bonding wire. After packaging, the phase-frequency responses of the laser modules can also be significantly improved (c) 2005 Wiley Periodicals, Inc.

Effects of annealing ambient on the formation of compensation defects in InP

Positron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The different annealing ambiences convert the as-grown n-type undoped InP into two types of semi-insulating (SI) states. The positron average lifetimes of as-grown InP, PP SI-InP, and IP SI-InP are found to be 246, 251, and 243 ps, respectively, which are all longer than the bulk lifetime of 240 ps, indicating the existence of vacancy-type positron-trapping defects. For as-grown InP, VInH4 complexes are the dominant defects. They dissociate into VInHn(0less than or equal tonless than or equal to3) acceptor vacancies under PP ambience annealing, compensating the residual shallow donors and turning the material semi-insulating. In forming IP SI-InP, diffusion of iron into V-In complexes under IP ambience annealing produces the substitutional compensation defect Fe-In, causing a shorter positron average lifetime. The PICTS measurements show that a group of vacancy-type defects has been suppressed by iron diffusion during the annealing process, which is in good agreement with the PAL results. (C) 2003 American Institute of Physics.