422 resultados para GaAs material


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An analysis on crack creep propagation problem of power-law nonlinear viscoelastic materials is presented. The creep incompressilility assumption is used. To simulate fracture behavior of craze region, it is assumed that in the fracture process zone near the crack tip, the cohesive stress sigma(f) acts upon the crack surfaces and resists crack opening. Through a perturbation method, i. e., by superposing the Mode-I applied force onto a referential uniform stress state, which has a trivial solution and gives no effect on the solution of the original problem, the nonlinear viscoelastic problem is reduced to linear problem. For weak nonlinear materials, for which the power-law index n similar or equal to 1, the expressions of stress and crack surface displacement are derived. Then, the fracture process zone local energy criterion is proposed and based on which the formulas of cracking incubation time t

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In this paper, the dynamic response of a penny-shaped interface crack in bonded dissimilar homogeneous half-spaces is studied. It is assumed that the two materials are bonded together with such a inhomogeneous interlayer that makes the elastic modulus in the direction perpendicular to the crack surface is continuous throughout the space. The crack surfaces art assumed to be subjected to torsional impact loading. Laplace and Hankel integral transforms are applied combining with a dislocation density,function to reduce the mixed boundary value problem into a singular integral equation with a generalized Cauchy kernel in Laplace domain. By solving the singular integral equation numerically, and using a numerical Laplace inversion technique, the dynamic stress intensity factors art obtained. The influences of material properties and interlayer thickness on the dynamic stress intensity factor are investigated.

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High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

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(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. (C) 2003 Elsevier B.V. All rights reserved.

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Crack paths in an elastic layer on top of a substrate are considered. Crack growth is initiated from an edge crack in the layer. The plane of the initially straight crack forms an angle to the free surface. The load consists of a pair of forces applied at the crack mouth and parallel to the interface. Crack paths are calculated using a boundary element method. Crack growth is assumed to proceed along a path for which the mode II stress intensity factor vanishes. The inclination and the length of the initial crack are varied. The effect of two different substrates on the crack path evolution is demonstrated. A crack path initially leading perpendicularly to the interface is shown to be directionally unstable for a rigid substrate. Irrespective of its initial angle, the crack does not reach the interface, but reaches the free surface if the layer is infinitely long. At finite layer length the crack reaches the upper free surface if the initial crack inclination to the surface is small enough. For an inextendable flexible substrate, on the other hand, the crack reaches the interface if its initial inclination is large enough. For the flexible substrate an unstable path parallel with the sides of an infinitely long layer is identified. The results are compared with experimental results and discussed in view of characterisation of directionally unstable crack paths. The energy release rate for an inclined edge crack is determined analytically.

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The various patterns (shear banding, surface wrinkling and necking) of material bifurcation in plane sheet under tension are investigated in this paper by means of a numerical method. It is found that numerical analysis can provide better ground for searching for the lowest critical loads. The inhomogeneity caused by void damage and the nonuniformity in the stress distribution across sheet thickness are proved to have detrimental effects on the material bifurcation. Nevertheless, material stability can be promoted by any means of depressing void damage or alleviating stress, even locally across the thickness. Besides, the peculiar behaviour of material bifurcation under slight biaxiality state is demonstrated. Copyright (C) 1996 Elsevier Science Ltd

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In order to describe the effect of latent hardening on the macro-plastic behavior of foc-crystal, a new expression for hardening coefficient is proposed in which there are 12 material constants, each having clear physical meaning. And a method of material constant calibration is suggested and used to determine the material constants of copper and aluminum crystal. The simulated load-elongation curves along various crystallographic orientations are comparable with the experimental ones.

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It is shown that the variable power singularity of the strain field at the crack tip can be obtained by the simple technique of collapsing quadrilateral isoparametric elements into triangular elements around the crack tip and adequately shifting the side-nodes adjacent to this crack tip. The collapsed isoparametric elements have the desired singularity at crack tip along any ray. The strain expressions for a single element have been derived and in addition to the desired power singularity, additional singularities are revealed. Numerical examples have shown that triangular elements formed by collapsing one side lead to excellent results.

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This paper presents an asymptotic analysis of the near-tip stress and strain fields of a sharp V-notch in a power law hardening material. First, the asymptotic solutions of the HRR type are obtained for the plane stress problem under symmetric loading. It is found that the angular distribution function of the radial stress sigma(r) presents rapid variation with the polar angle if the notch angle beta is smaller than a critical notch angle; otherwise, there is no such phenomena. Secondly, the asymptotic solutions are developed for antisymmetric loading in the cases of plane strain and plane stress. The accurate calculation results and the detailed comparisons are given as well. All results show that the singular exponent s is changeable for various combinations of loading condition and plane problem.

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Examined in this work is the anti-plane stress and strain near a crack in a material that softens beyond the elastic peak and unloads on a linear path through the initial state. The discontinuity in the constitutive relation is carried into the analysis such that one portion of the local solution is elliptic in character and the other hyperbolic. Material elements in one region may cross over to another as the loading is increased. Local unloading can thus prevail. Presented are the inhomogeneous character of the asymptotic stress and strain in the elliptic and hyperbolic region, in addition to the region in which the material elements had experienced unloading. No one single stress or strain coefficient would be adequate for describing crack instability.

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Creep behavior of [±45°]s composite material is characterized by using uniaxial creep and recovery tests. The well-known Schapery nonlinear viscoelastic consti tutive relation was modified to make it suitable for characterizing the creep behavior of this material. Then, using this modified Schapery constitutive equation, by which the vis coplastic and creep damage can be taken into consideration, the creep behavior of [±45°]. glass fiber reinforced epoxy laminate was studied. The constitutive parameters of the material were determined experimentally, and the procedure and method of determination of the material parameters are proved to be valid.

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GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

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The mechanism of ductile damage caused by secondary void damage in the matrix around primary voids is studied by large strain, finite element analysis. A cylinder embedding an initially spherical void, a plane stress cell with a circular void and plane strain cell with a cylindrical or a flat void are analysed under different loading conditions. Secondary voids of smaller scale size nucleate in the strain hardening matrix, according to the requirements of some stress/strain criteria. Their growth and coalescence, handled by the empty element technique, demonstrate distinct mechanisms of damage as circumstances change. The macroscopic stress-strain curves are decomposed and illustrated in the form of the deviatoric and the volumetric parts. Concerning the stress response and the void growth prediction, comparisons are made between the present numerical results and those of previous authors. It is shown that loading condition, void growth history and void shape effect incorporated with the interaction between two generations of voids should be accounted for besides the void volume fraction.

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Furthermore, the compressed flow driven by the piston is discussed. The consistent solution of gasdynamical equations including solar gravity is obtained for the unsteady and two-dimensional configuration, which is applied to the region between the piston and shock wave. This solution may satisfy the jump conditions of shock wave, which separates the region of compressed flow and quiet corona.

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对室温条件下用低能离子束沉积得到的 Ga As∶ Gd样品 ,借助 X射线衍射 (XRD)和高分辨 X射线衍射 (HR-XRD)进行了结构分析 ,结果表明没有出现新的衍射峰 ,并且摇摆曲线的形状与 Gd的注入计量密切相关 .运用 X光电子能谱仪对比分析了 Gd注入后 ,衬底中主要元素 Ga2 p和 As3d的化学位移 ,以及不同计量的样品中注入的Gd4 d芯能级束缚能的变化 ,并分析了铁磁性产生的可能原因 .