Performance of a Supersonic Model Combustor using Vaporized Kerosene Injection

Characteristics of supersonic combustion by injecting kerosene vapor into a Mach 2.5 crossflow at various preheat temperatures and pressures were investigated experimentally. A two-stage heating system has been designed and tested, which can prepare heated kerosene of 0.8 kg up to 820 K at pressure of 5.5 Mpa with minimum/negligible fuel coking. In order to simulate the thermophysical properties of kerosene over a wide range of thermodynamic conditions, a three-component surrogate that matches the compound class of the parent fuel was employed. The flow rate of kerosene vapor was calibrated using a sonic nozzle. Computed flow rates using the surrogate fuel are in agreement with the experimental data. Kerosene jets at various preheat temperatures injecting into both quiescent environment and Mach 2.5 crossflow were visualized. It was found that at injection pressure of 4 Mpa and preheat temperature of 550 K the kerosene jet was completely in vapor phase, while keeping almost the same penetration depth as compared to the liquid kerosene injection. Supersonic combustion tests were also carried out to compare the combustor performance for the cases of vaporized kerosene injection, liquid kerosene injection, and effervescent atomization with hydrogen barbotage, under the similar stagnation conditions. Experimental results demonstrated that the use of vaporized kerosene injection leads to better combustor performance. Further parametric study on vaporized kerosene injection in a supersonic model combustor is needed to assess the combustion efficiency as well as to identify the controlling mechanism for the overall combustion enhancement.

Modeling Study of Shrouding Gas Effects on a Laminar Argon Plasma Jet Impinging Upon a Flat Substrate in Air Surroundings

With the laminar plasma materials processing as the research background, modeling study is conducted concerning the effects of argon shroud on the characteristics of the laminar argon plasma jet impinging normally upon a flat substrate located in air surroundings. It is shown that adding shrouding gas is an effective method to reduce and control the entrainment of ambient air into the laminar plasma jet. The shrouding gas flow rate or velocity, the injection slot width and the stand-off distance of the substrate appreciably affect the air contents in the plasma near the substrate surface.

Experiments about Simple Liquid Flows in Microtubes

The behavior of micro-scale flow is significant for the performance of Micro-Electro-Mechanical- Systems (MEMS) devices. Some experiments about liquid flow through microtubes with diameters about 3similar to20mum are presented here. The liquids used in our experiments include some simple liquids with small molecules, such as non-ion water and several kinds of organic liquids (CCL4, C6H5C2H5 and Isopropanol etc.). The flow rate and the normalized friction cocfficients were measured in micro-flow experimental apparatus. The results show that when the driven pressure varies from 0 to 1Mpa, the flow behaviors in 20mum microtube for both polar and non-polar liquids are in agreement with Hagen-Poiseuille law of the classical theory. It means that N-S equation based on continuous medium still acts well in this case. For higher pressure drop from 1 to 30Mpa, in the microtubes with diameter of 3similar to10mum, the normalized friction coefficients of organic liquids can't keep constant with pressure increases. However the non-ion water reveals different trends.

流量配比对Coil增益分布影响的数值研究

利用三维CFD技术,通过求解层流Navier-stokes方程与组分输运方程,对简化后的化学氧碘激光RADICL模型进行数值模拟与分析,结合10种组分和21个基元反应的化学反应模型,对COIL亚声速段横向射流情况下,不同的主副流流量配比对化学氧碘激光器性能的影响进行分析与比较.结果证明,过高或过低的碘分子浓度状态均不利于合理、可观的小信号增益系数产生.存在一个最佳流量配比范围,与之对应的工作状态下,COIL的小信号增益系数会得到显著提高.

Catalytic Cracking and Heat Sink Capacity of Aviation Kerosene Under Supercritical Conditions

Catalytic cracking of China no. 3 aviation kerosene using a zeolite catalyst was investigated under supercritical conditions. A three-stage heating/cracking system was specially designed to be capable of heating 0.8 kg kerosene to a temperature of 1050 K and pressure of 7.0 MPa with maximum mass flow rate of 80 g/s. Sonic nozzles of different diameters were used to calibrate and monitor the mass flow rate of the cracked fuel mixture. With proper experiment arrangements, the mass flow rate per unit throat area of the cracked fuel mixture was found to well correlate with the extent of fuel conversion. The gaseous products obtained from fuel cracking under different conditions were also analyzed using gas chromatography. Composition analysis showed that the average molecular weight of the resulting gaseous products and the fuel mass conversion percentage were a strong function of the fuel temperature and were only slightly affected by the fuel pressure. The fuel conversion was also shown to depend on the fuel residence time in the reactor, as expected. Furthermore, the heat sink levels due to sensible heating and endothermic cracking were determined and compared at varying test conditions. It was found that at a fuel temperature of similar to 1050 K, the total heat sink reached similar to 3.4 MJ/kg, in which chemical heat sink accounted for similar to 1.5 MJ/kg.

Thermal cracking of aviation kerosene for scramjet applications

Thermal cracking of China No.3 aviation kerosene was studied experimentally and analytically under supercritical conditions relevant to regenerative cooling system for Mach-6 scramjet applications. A two-stage heated tube system with cracked products collection/analysis was used and it can achieve a fuel temperature range of 700-1100 K, a pressure range of 3.5-4.5 MPa and a residence time of approximately 0.5-1.3 s. Compositions of the cracked gaseous products and mass flow rate of the kerosene flow at varied temperatures and pressures were obtained experimentally. A one-step lumped model was developed with the cracked mixtures grouped into three categories: unreacted kerosene, gaseous products and residuals including liquid products and carbon deposits. Based on the model, fuel conversion on the mass basis, the reaction rate and the residence time were estimated as functions of temperature. Meanwhile, a sonic nozzle was used for the control of the mass flow rate of the cracked kerosene, and correlation of the mass flow rate gives a good agreement with the measurements.

Developing A Microfluidic-Based System To Quantify Cell Capture Efficiency

Micro-fabrication technology has substantial potential for identifying molecular markers expressed on the surfaces of tissue cells and viruses. It has been found in several conceptual prototypes that cells with such markers are able to be captured by their antibodies immobilized on microchannel substrates and unbound cells are flushed out by a driven flow. The feasibility and reliability of such a microfluidic-based assay, however, remains to be further tested. In the current work, we developed a microfluidic-based system consisting of a microfluidic chip, an image grabbing unit, data acquisition and analysis software, as well as a supporting base. Specific binding of CD59-expressed or BSA-coupled human red blood cells (RBCs) to anti-CD59 or anti-BSA antibody-immobilized chip surfaces was quantified by capture efficiency and by the fraction of bound cells. Impacts of respective flow rate, cell concentration, antibody concentration and site density were tested systematically. The measured data indicated that the assay was robust. The robustness was further confirmed by capture efficiencies measured from an independent ELISA-based cell binding assay. These results demonstrated that the system developed provided a new platform to effectively quantify cellular surface markers effectively, which promoted the potential applications in both biological studies and clinical diagnoses.

Micromachining Of Passive Planar Micromixer On Poly (Methyl Methacrylate) Substrate With Excimer Laser Ablation

Excimer laser ablation technique was introduced into this work to fabricate a passive planar micromixer on the PMMA substrate. T-junction shaped and width-changed S-shaped microchannels were both designed in this micromixer to enhance mixing effect. The mixing experiment of distilled water and Rhodamine B with injection flow rate of 500 and 1,500 mu m/s validates the mixing effectivity of this micromixer, and indicates the feasibility of excimer laser ablation in the microfabrication of mu-TAS device.

Direct measurement of entrainment in plasma jets

The entrainment rate of ambient gas into a turbulent argon plasma jet generated by plasma torch is directly measured using a “porous-wall chamber” technique. It is shown that with the increase of the mass flow rates of argon at the jet inlet, the mass flow rate of entrained gas increases. The normalized mass flow rate decreases with the increasing inlet mass flow rates of plasma torch. The entrained gas mass flow rate increases with increasing chamber length, but less depends on the arc current of the plasma torch at higher flow rates. The effects of different ways of inflowing gas into plasma torch on entrainment characteristics of plasma jet are also examined in this paper.

Perfluorinated compounds in the Pearl River and Yangtze River of China

A total of 14 perfluorinated compounds (PFCs) were quantified in river water samples collected from tributaries of the Pearl River (Guangzhou Province, south China) and the Yangtze River (central China). Among the PFCs analyzed, perfluorooctane sulfonate (PFOS) and perfluorooctanoic acid (PFOA) were the two compounds with the highest concentrations. PFOS concentrations ranged from 0.90 to 99 ng/1 and < 0.01-14 ng/1 in samples from the Pearl River and Yangtze River, respectively; whereas those for PFOA ranged from 0.85 to 13 ng/l and 2.0-260 ng/l. Lower concentrations were measured for perfluorobutane sulfonate (PFBS), perfluorohexane sulfonate (PFHxS), perfluorooctanesulfoamide (PFOSA), perfluorohexanoic acid (PFHxA), perfluoroheptanoic acid (PFHpA), perfluorononaoic acid (PFNA), perfluorodecanoic acid (PFDA), and perfluoroundecanoic acid (PFUnDA). Concentrations of several perfluorocarboxylic acids, including perfluorododecanoic acid (PFDoDA), perfluorotetradecanoic acid (PFTeDA), perfluorohexadecanoic acid (PFHxDA) and perfluorooctadecanoic acid (PFOcDA) were lower than the limits of quantification in all the samples analyzed. The highest concentrations of most PFCs were observed in water samples from the Yangtze River near Shanghai, the major industrial and financial centre in China. In addition, sampling locations in the lower reaches of the Yangtze River with a reduced flow rate might serve as a final sink for contaminants from the upstream river runoffs. Generally, PFOS was the dominant PFC found in samples from the Pearl River, while PFOA was the predominant PFC in water from the Yangtze River. Specifically, a considerable amount of PFBS (22.9-26.1% of total PFC analyzed) was measured in water collected near Nanjing, which indicates the presence of potential sources of PFBS in this part of China. Completely different PFC composition profiles were observed for samples from the Pearl River and the Yangtze River. This indicates the presence of dissimilar sources in these two regions. (c) 2007 Elsevier Ltd. All rights reserved.

Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD

Epitaxial growth of Zn-doped InGaAs on InP substrates has been carried out at 550degreesC by LP-MOCVD. Hole concentration as high as 6 x 10(19)cm(-3) has been achieved at the H-2 flow rate of 20 sccm through DEZn bubbler. The lattice constant of Zn-doped InGaAs was found to be dependent on the flow rate of DEZn, and the tensile strain mismatch increases with increasing H-2 flow rate of DEZn. The negative lattice mismatch of heavily Zn-dopped InGaAs may be due to, the small covalent bonding radius of zinc and the combination of butane from ethyl of DEZn,and TEGa. And the latter accelerates the pyrolysis of TEGa, which is the dominant mechanism in determining the negative mismatch of Zn-doped InGaAs. (C) 2003 Elsevier B.V. All rights reserved.

Study on the thermal stability of InN by in-situ laser reflectance system

The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was systematically investigated in situ by laser reflectance system and ex situ by morphology characterization, X-ray diffraction and X-ray photoelectron spectroscopy. It was found that InN can withstand isothermal annealing at temperature as high as 600 degrees C in NH3 ambient. While in N-2 atmosphere, it will decompose quickly to form In-droplets at least at the temperature around 500 degrees C, and the activation energy of InN decomposition was estimated to be 2.1 +/- 0.1 eV. Thermal stability of InN when annealing in NH3 ambient during temperature altering would be very sensitive to ramping rate and NH3 flow rate, and InN would sustain annealing process at small ramping rate and sufficient supply of reactive nitrogen radicals. Whereas In-droplets formation was found to be the most frequently encountered phenomenon concerning InN decomposition, annealing window for conditions free of In-droplets was worked out and possible reasons related are discussed. In addition, InN will decompose in a uniform way in the annealing window, and the decomposition rate was found to be in the range of 50 and 100 nm/h. Hall measurement shows that annealing treatment in such window will improve the electrical properties of InN. (c) 2005 Elsevier B.V. All rights reserved.

Electrical properties and electroluminescence of 4H-SiC p-n junction diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal air-cooled quartz tube at around 1500 degreesC and 1.33 x 10(4) Pa by employing SiH4 + C2H4 + H-2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm(2) (.) V-1 (.) s(-1) with a carrier concentration of similar to 10(16) cm(-3) and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 x 10(21) cm(-3) with a mobility of 0.75 cm(2) (.) V-1 (.) s(-1). SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Al-doped 4H-SiC substrates. The C - V characteristics of the diodes were linear in the 1/C-3 - V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 degreesC, which provides a potential for high-temperature applications.

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 mu m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 mu m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.

Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(111) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free GaN film with advanced optical and crystal properties. (c) 2005 Elsevier B.V. All rights reserved.