Thermal cracking of aviation kerosene for scramjet applications

Thermal cracking of China No.3 aviation kerosene was studied experimentally and analytically under supercritical conditions relevant to regenerative cooling system for Mach-6 scramjet applications. A two-stage heated tube system with cracked products collection/analysis was used and it can achieve a fuel temperature range of 700-1100 K, a pressure range of 3.5-4.5 MPa and a residence time of approximately 0.5-1.3 s. Compositions of the cracked gaseous products and mass flow rate of the kerosene flow at varied temperatures and pressures were obtained experimentally. A one-step lumped model was developed with the cracked mixtures grouped into three categories: unreacted kerosene, gaseous products and residuals including liquid products and carbon deposits. Based on the model, fuel conversion on the mass basis, the reaction rate and the residence time were estimated as functions of temperature. Meanwhile, a sonic nozzle was used for the control of the mass flow rate of the cracked kerosene, and correlation of the mass flow rate gives a good agreement with the measurements.

Developing A Microfluidic-Based System To Quantify Cell Capture Efficiency

Micro-fabrication technology has substantial potential for identifying molecular markers expressed on the surfaces of tissue cells and viruses. It has been found in several conceptual prototypes that cells with such markers are able to be captured by their antibodies immobilized on microchannel substrates and unbound cells are flushed out by a driven flow. The feasibility and reliability of such a microfluidic-based assay, however, remains to be further tested. In the current work, we developed a microfluidic-based system consisting of a microfluidic chip, an image grabbing unit, data acquisition and analysis software, as well as a supporting base. Specific binding of CD59-expressed or BSA-coupled human red blood cells (RBCs) to anti-CD59 or anti-BSA antibody-immobilized chip surfaces was quantified by capture efficiency and by the fraction of bound cells. Impacts of respective flow rate, cell concentration, antibody concentration and site density were tested systematically. The measured data indicated that the assay was robust. The robustness was further confirmed by capture efficiencies measured from an independent ELISA-based cell binding assay. These results demonstrated that the system developed provided a new platform to effectively quantify cellular surface markers effectively, which promoted the potential applications in both biological studies and clinical diagnoses.

Micromachining Of Passive Planar Micromixer On Poly (Methyl Methacrylate) Substrate With Excimer Laser Ablation

Excimer laser ablation technique was introduced into this work to fabricate a passive planar micromixer on the PMMA substrate. T-junction shaped and width-changed S-shaped microchannels were both designed in this micromixer to enhance mixing effect. The mixing experiment of distilled water and Rhodamine B with injection flow rate of 500 and 1,500 mu m/s validates the mixing effectivity of this micromixer, and indicates the feasibility of excimer laser ablation in the microfabrication of mu-TAS device.

Direct measurement of entrainment in plasma jets

The entrainment rate of ambient gas into a turbulent argon plasma jet generated by plasma torch is directly measured using a “porous-wall chamber” technique. It is shown that with the increase of the mass flow rates of argon at the jet inlet, the mass flow rate of entrained gas increases. The normalized mass flow rate decreases with the increasing inlet mass flow rates of plasma torch. The entrained gas mass flow rate increases with increasing chamber length, but less depends on the arc current of the plasma torch at higher flow rates. The effects of different ways of inflowing gas into plasma torch on entrainment characteristics of plasma jet are also examined in this paper.

Perfluorinated compounds in the Pearl River and Yangtze River of China

A total of 14 perfluorinated compounds (PFCs) were quantified in river water samples collected from tributaries of the Pearl River (Guangzhou Province, south China) and the Yangtze River (central China). Among the PFCs analyzed, perfluorooctane sulfonate (PFOS) and perfluorooctanoic acid (PFOA) were the two compounds with the highest concentrations. PFOS concentrations ranged from 0.90 to 99 ng/1 and < 0.01-14 ng/1 in samples from the Pearl River and Yangtze River, respectively; whereas those for PFOA ranged from 0.85 to 13 ng/l and 2.0-260 ng/l. Lower concentrations were measured for perfluorobutane sulfonate (PFBS), perfluorohexane sulfonate (PFHxS), perfluorooctanesulfoamide (PFOSA), perfluorohexanoic acid (PFHxA), perfluoroheptanoic acid (PFHpA), perfluorononaoic acid (PFNA), perfluorodecanoic acid (PFDA), and perfluoroundecanoic acid (PFUnDA). Concentrations of several perfluorocarboxylic acids, including perfluorododecanoic acid (PFDoDA), perfluorotetradecanoic acid (PFTeDA), perfluorohexadecanoic acid (PFHxDA) and perfluorooctadecanoic acid (PFOcDA) were lower than the limits of quantification in all the samples analyzed. The highest concentrations of most PFCs were observed in water samples from the Yangtze River near Shanghai, the major industrial and financial centre in China. In addition, sampling locations in the lower reaches of the Yangtze River with a reduced flow rate might serve as a final sink for contaminants from the upstream river runoffs. Generally, PFOS was the dominant PFC found in samples from the Pearl River, while PFOA was the predominant PFC in water from the Yangtze River. Specifically, a considerable amount of PFBS (22.9-26.1% of total PFC analyzed) was measured in water collected near Nanjing, which indicates the presence of potential sources of PFBS in this part of China. Completely different PFC composition profiles were observed for samples from the Pearl River and the Yangtze River. This indicates the presence of dissimilar sources in these two regions. (c) 2007 Elsevier Ltd. All rights reserved.

Determination of sexual hormones in liquid cosmetics by polymer monolith microextraction coupled with high performance liquid chromatography

A method was presented for the determination of testosterone, methyltestosterone and progesterone in liquid cosmetics by coupling polymer monolith microextraction (PMME) to high performance liquid chromatography with UV detection. A poly (methacrylic acid-ethylene glycol dimethacrylate) monolithic capillary column was selected as the extraction medium, which showed high extraction capacity towards these compounds. To achieve optimum extraction performance, several parameters relating to PMME were investigated, including extraction flow rate and pH value, inorganic salt and organic phase concentration of the sample matrix. By simple dilution with phosphate solution and filtering, the sample solution then could be directly injected into the device for extraction. The limits of detection of testosterone, methyltestosterone and progesterone were calculated to be 2, 3, 2, 8 and 4.6 mu g/L. Good linearity was achieved in the range of 10 to 1000 mu g/L with a linear coefficient. r value above 0. 996. Excellent method reproducibility was found by intra- and inter-day precisions, yielding the relative standard deviations of < 7. 7 % and < 7. 5 %, respectively. Recovery for them in the real samples was between 83% and 119%.

Analysis of estrogens in environmental waters using polymer monolith in-polyether ether ketone tube solid-phase microextraction combined with high-performance liquid chromatography

A simple, rapid and sensitive on-line method for simultaneous determination of four endocrine disruptors (17 beta-estradiol, estriol, bisphenol A and 17 alpha-ethinylestradiol) in environmental waters was developed by coupling in-tube solid-phase microextraction (SPME) to high-performance liquid chromatography (HPLC) with fluorescence detection (FLD). A poly(acrylamide-vinylpyridine-NAP-methylene bisacrylamide) monolith, synthesized inside a polyether ether ketone (PEEK) tube, was selected as the extraction medium. To achieve optimum extraction performance, several parameters were investigated, including extraction flow-rate, extraction time, and pH value, inorganic salt and organic solvent content of the sample matrix. By simply filtered with nylon membrane filter and adjusting the pH of samples to 6.0 with phosphoric acid, the sample solution then could be directly injected into the device for extraction. Low detection limits (S/N = 3) and quantification limits (S/N = 10) of the proposed method were achieved in the range of 0.006-0.10 ng/mL and 0.02-0.35 ng/mL from spiked lake waters, respectively. The calibration curves of four endocrine disruptors showed good linearity ranging from quantification limits to 50 ng/mL with a linear coefficient R-2 value above 0.9913. Good method reproducibility was also found by intra- and inter-day precisions, yielding the RSDs less than 12 and 9.8%, respectively. Finally, the proposed method was successfully applied to the determination of these compounds in several environmental waters. (c) 2006 Elsevier B.V. All rights reserved.

Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD

Epitaxial growth of Zn-doped InGaAs on InP substrates has been carried out at 550degreesC by LP-MOCVD. Hole concentration as high as 6 x 10(19)cm(-3) has been achieved at the H-2 flow rate of 20 sccm through DEZn bubbler. The lattice constant of Zn-doped InGaAs was found to be dependent on the flow rate of DEZn, and the tensile strain mismatch increases with increasing H-2 flow rate of DEZn. The negative lattice mismatch of heavily Zn-dopped InGaAs may be due to, the small covalent bonding radius of zinc and the combination of butane from ethyl of DEZn,and TEGa. And the latter accelerates the pyrolysis of TEGa, which is the dominant mechanism in determining the negative mismatch of Zn-doped InGaAs. (C) 2003 Elsevier B.V. All rights reserved.

Study on the thermal stability of InN by in-situ laser reflectance system

The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was systematically investigated in situ by laser reflectance system and ex situ by morphology characterization, X-ray diffraction and X-ray photoelectron spectroscopy. It was found that InN can withstand isothermal annealing at temperature as high as 600 degrees C in NH3 ambient. While in N-2 atmosphere, it will decompose quickly to form In-droplets at least at the temperature around 500 degrees C, and the activation energy of InN decomposition was estimated to be 2.1 +/- 0.1 eV. Thermal stability of InN when annealing in NH3 ambient during temperature altering would be very sensitive to ramping rate and NH3 flow rate, and InN would sustain annealing process at small ramping rate and sufficient supply of reactive nitrogen radicals. Whereas In-droplets formation was found to be the most frequently encountered phenomenon concerning InN decomposition, annealing window for conditions free of In-droplets was worked out and possible reasons related are discussed. In addition, InN will decompose in a uniform way in the annealing window, and the decomposition rate was found to be in the range of 50 and 100 nm/h. Hall measurement shows that annealing treatment in such window will improve the electrical properties of InN. (c) 2005 Elsevier B.V. All rights reserved.

Electrical properties and electroluminescence of 4H-SiC p-n junction diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal air-cooled quartz tube at around 1500 degreesC and 1.33 x 10(4) Pa by employing SiH4 + C2H4 + H-2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm(2) (.) V-1 (.) s(-1) with a carrier concentration of similar to 10(16) cm(-3) and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 x 10(21) cm(-3) with a mobility of 0.75 cm(2) (.) V-1 (.) s(-1). SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Al-doped 4H-SiC substrates. The C - V characteristics of the diodes were linear in the 1/C-3 - V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 degreesC, which provides a potential for high-temperature applications.

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 mu m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 mu m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.

Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(111) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free GaN film with advanced optical and crystal properties. (c) 2005 Elsevier B.V. All rights reserved.

Epitaxial growth of GaNAs/GaAs heterostructure materials

A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001) substrate have been carried out by using DC active Nz plasma, assisted molecular beam epitaxy. The samples of GaNAs between 3 and 200 nm thick were evaluated by double crystal X-ray diffraction (XRD) and photoluminescence (PL) measurements. PL and XRD measurements for these samples are in good agreement. Some material growth and structure parameters affecting the properties of GaNAs/GaAs heterostructure were studied; they were: (1) growth temperature of GaNAs epilayer; (2) electrical current of active N-2 plasma; (3) Nz flow rate; (4) GaNAs growth rate; (5) the thickness of GaNAs strained layer. XRD and PL measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 meV Fourier transform infrared spectroscopy (FWHM) can be achieved in molecular beam epitaxy (MBE) system. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy

Low temperature (similar to 500 degrees C) growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy have been studied with an emphasis on surface morphology and growth kinetics. It is found that low-temperature growth(<500 degrees C) is in layer-by-layer mode and atomically-smooth surfaces have been obtained in as-grown samples with large Ge composition (>0.5). Ge composition dependence on substrate temperature, Ge cell temperature and disilane flow rate have been investigated. It is found that in low-temperature growth (less than or equal to 500 degrees C) and under large disilane flux, Ge composition increases with the increase of Ge flux and further increase of Ge flux leads to the saturation of Ge composition. Similar compositional dependence has been found at different growth temperatures. The saturated composition increases with the decrease of substrate temperature. The results can be explained if H desorption is assumed to occur from both Si and Ge monohydrides without diffusional exchange and the presence of Ge enhances H desorption on a Si site. (C) 1998 Elsevier Science B.V. All rights reserved.

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.