RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI

We report fundamental changes of the radiative recombination in a wide range of n-type and p-type GaAs after diffusion with the group-I element Li. These optical properties are found to be a bulk property and closely related to the electrical conductivity of the samples. In the Li-doped samples the radiative recombination is characterized by emissions with excitation-dependent peak positions which shift to lower energies with increasing degree of compensation and concentration of Li. These properties are shown to be in qualitative agreement with fluctuations of the electrostatic potential in strongly compensated systems. For Li-diffusion temperatures above 700-800-degrees-C semi-insulating conditions with electrical resistivity exceeding 10(7) OMEGA cm are obtained for all conducting starting materials. In this heavy Li-doping regime, the simple model of fluctuating potentials is shown to be inadequate for explaining the. experimental observations unless the number of charged impurities is reduced through complexing with Li. For samples doped with low concentrations of Li, on the other hand, the photoluminescence properties are found to be characteristic of impurity-related emissions.

Characterization of recombination centres in n-type Hg1-xCdxTe

The defect levels in Hg1-xCdxTe P+N junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, E(1)(0.06) and E(2)(0.15), and two hole traps, H-1(0.075) and H-2(0.29), were obtained, Characteristic parameters-the minority lifetime of the devices and the dynamic resistance-area product at zero bias-are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap H-2(0.29) further. It has a large activation energy and satisfies the formula sigma(T) = sigma(x) exp(-E(F)/E(T)). This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

Boron-doped hydrogenated silicon films with different gaseous doping ratios (B_2H_6/SiH_4) were deposited in a plasma-enhanced chemical vapor deposition (PECVD) system. The microstructure of the films was investigated by atomic force microscopy (AFM) and Raman scattering spectroscopy. The electrical properties of the films were characterized by their room temperature electrical conductivity (σ) and the activation energy (E_a). The results show that with an increasing gaseous doping ratio, the silicon films transfer from a microcrystalline to an amorphous phase, and corresponding changes in the electrical properties were observed. The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions. The measurements of the Ⅰ-Ⅴ characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04, and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it. The junction with such a recombination layer has a small resistance, a nearly ohmic contact, and a negligible optical absorption.

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

We have studied exciton localization and delocalization effect in GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) and timeresolved PL measurements. Studied results suggest that, at low temperature and under a conventional CW excitation, measured PL spectra were dominated by localized exciton (LE) emission caused by potential fluctuations in GaNAs layer. However, under short pulse laser excitation, it is different. An extra high-energy PL peak comes out from GaNAs/GaAs QWs and dominates the PL spectra under high excitation and/or at high temperature. By investigation, we have attributed the new PL peak to the recombination of delocalized excitons in QWs. This recombination process competes with the localized exciton emission, which, we believe, constitutes the "S-shaped" temperature-dependent emission shift often reported in ternary nitrides of InGaN and AlGaN in the literature.

Optical study of localized and delocalized states in GaAsN/GaAs

Taking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Optical study of electronic states in GaAsN

GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

Chromosomal aberrations induced by C-12(6+) ions and Co-60 gamma-rays in mouse immature oocytes

The ovaries of Kun-Ming strain mice (3 weeks) were irradiated with different doses of C-12(6+) ion or Co-60 gamma-ray. Chromosomal aberrations were analyzed in metaphase II oocytes at 7 weeks after irradiation. The relative biological effectiveness (RBE) of C C-12(6+) ion was calculated with respect to Co-60 gamma-ray for the induction of chromosornal aberrations. The C-12(6+) ion and Co-60 gamma-ray dose-response relationships for chromosomal aberrations were plotted by linear quadratic models. The data showed that there was a dose-related increase in frequency of chromosomal aberrations in all the treated groups compared to controls. The RBE values for C-12(6+) ions relative to (CO)-C-60 gamma-rays were 2.49, 2.29, 1.57, 1.42 or 1.32 for the doses of 0.5, 1.0, 2.07 4.0 or 6.0 Gy, respectively. Moreover, a different distribution of the various types of aberrations has been found for C-12(6+) ion and Co-60 gamma-ray irradiations. The dose-response relationships for C-12(6+) ion and (CO)-C-60 gamma-ray exhibited positive correlations. The results from the present study may be helpful for assessing genetic damage following exposure of immature oocytes to ionizing radiation.

Four-dimensional Newton's constant in brane world with a sloping extra dimension

We show the four-dimensional Newton's constant obtained naturally from five-dimensional brane world with a tinily sloping extra dimension, which is independent of the bulk Weyl tensor. The corresponding universe is stiff fluid dominated when the slope of extra dimension is very small. Otherwise, the universe may be undergoing a self-acceleration at present epoch and have a decelerated phase in very recent past.

The level and distribution of chromosomal aberration of tomato seeds at different penetration depths of carbon ions

The relationship between the penetration depth and the level and distribution of chromosomal aberration of the root tip cells were investigated by exposure of the superposed tomato seeds to 80 MeV/u carbon ions. The results showed that on the entrance of the beam the chromosomal aberration level was low. Damage such as breaks and gaps were dominant. At the Bragg peak, the chromosomal aberration level was high. The yields of dicentrics, rings and disintegrated small chromosomes increased but the yields of breaks and gaps decreased. These results are consistent with the distribution of the physical depth dose pro. le of carbon ions. It is effective to deposit the Bragg peak on the seeds to induce hereditary aberration in the mutation breeding with heavy ions.

用于辐射复合与双电子复合实验的低能离子闪烁探测器；A Scintillator Detector for Low Energy Projectile Detection in Radiative Recombination and Dielectron Recombination Experiments

为了在CSRm的电子冷却器上进行辐射复合以及双电子复合实验,需要探测能量小于4MeV/u的离子,因此设计了新的置于超高真空环境的CsI(Tl)闪烁探测器,探测器采用的光电倍增管为R7525(Hamamatsu)。介绍了新闪烁探测器的结构,并对其进行了性能测试。测试结果表明,该探测器对高、低能离子均有良好的响应,探测器的信号十分明显。探测器的最高计数率可以达到106ions/s,并且探测器附近的真空度可达10-10Pa量级,能够满足辐射复合与双电子复合实验以及储存环对真空的要求,为今后在CSRm上进行复合实验打下了良好的基础。

利用HIRFL-CSR开展分子离子复合离解研究的可行性分析；Feasibility Analysis of Studying Dissociative Recombination Processes of Molecular Ions at HIRFL-CSR

介绍了储存环高精度分子谱学研究的科学意义、国内外研究现状和利用HIRFL-CSR开展该项研究的优势,着重论证了HIRFL-CSR分子离子注入实验环的总体设计方案和技术方案。通过在HIRFL-CSR实验环上增建一条分子离子注入线,将实验环改造成能兼顾现有物理实验和大分子物理研究的综合性研究平台,为分子离子复合离解研究提供良好的技术支撑。特别是质量数大于70的分子离子,能显著提高其能量分辨。

Dissociative recombination of the acetaldehyde cation, CH3CHO+

The dissociative recombination of the acetaldehyde cation, CH3CHO+, has been investigated at the heavy ion storage ring CRYRING at the Manne Siegbahn Laboratory in Stockholm, Sweden. The dependence of the absolute cross section of the reaction on the relative kinetic energy has been determined and a thermal rate coefficient of k(T) = (1.5 +/- 0.2) x 10(-6) (T/300)(-0.70 +/- 0.02) cm(3) s(-1) has been deduced, which is valid for electron temperatures between similar to 10 and 1000 K. The branching fractions of the reaction were studied at similar to 0 eV relative kinetic energy and we found that breaking one of the bonds between two of the heavy atoms occurs in 72 +/- 2% of the reactions. In the remaining events the three heavy atoms stay in the same product fragment. While the branching fractions are fairly similar to the results from an earlier investigation into the dissociative recombination of the fully deuterated acetaldehyde cation, CD3CDO+, the thermal rate coefficient is somewhat larger for CH3CHO+. Astrochemical implications of the results are discussed.

DISSOCIATIVE RECOMBINATION OF PROTONATED PROPIONITRILE, CH3CH2CNH+: IMPLICATIONS FOR TITAN'S UPPER ATMOSPHERE

The dissociative recombination of protonated propionitrile, CH3CH2CNH+, has been investigated at the heavy ion storage ring, CRYRING, at the Manne Siegbahn Laboratory, Stockholm University, Sweden. The thermal rate coefficient has been deduced to follow k(T) = (1.5 +/- 0.2) x 10(-6) (T/300)(-0.76) (+/-) (0.02) cm(3) s(-1) for electron temperatures ranging from similar to 10 to similar to 1000 K. Measurements of the branching fractions were performed at similar to 0 eV relative kinetic energy. It has been found that in 43% +/- 2% of the reactions the four heavy atoms remain in the same product fragment. An equal portion of the reactions leads to products where one of the heavy atoms is split off from the other three and 14% +/- 1% result in a breakup into two heavy fragments containing two heavy atoms each. We discuss the significance of the data to Titan's upper atmosphere.

Experimental studies of the dissociative recombination of CD3CDOD+ and CH3CH2OH2+

Aims. We determine branching fractions, cross sections and thermal rate constants for the dissociative recombination of CD3CDOD+ and CH3CH2OH2+ at the low relative kinetic energies encountered in the interstellar medium. Methods. The experiments were carried out by merging an ion and electron beam at the heavy ion storage ring CRYRING, Stockholm, Sweden. Results. Break-up of the CCO structure into three heavy fragments is not found for either of the ions. Instead the CCO structure is retained in 23 +/- 3% of the DR reactions of CD3CDOD+ and 7 +/- 3% in the DR of CH3CH2OH2+, whereas rupture into two heavy fragments occurs in 77 +/- 3% and 93 +/- 3% of the DR events of the respective ions. The measured cross sections were fitted between 1-200 meV yielding the following thermal rate constants and cross-section dependencies on the relative kinetic energy: sigma(E-cm[eV]) = 1.7 +/- 0.3 x 10(-15)(Ecm[eV])(-1.23 +/- 0.02) cm(2) and k(T) = 1.9 +/- 0.4 x 10(-6)(T/300)-0.73 +/- 0.02 cm(3) s(-1) for CH3CH2OH2+ as well as k(T) = 1.1 +/- 0.4 x 10(-6)(T/300)(-0.74 +/- 0.05) cm(3) s(-1) and s(Ecm[eV]) = 9.2 +/- 4 x 10(-16)(Ecm[eV])-1.24 +/- 0.05 cm(2) for CD3CDOD+