Optical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy

Optical and electrical properties of ZnSe self-organized quantum dots were investigated using photoluminescence, capacitance-voltage, and deep level transient Fourier spectroscopy techniques. The temperature dependence of photoluminescence was employed to clarify the mechanism of photoluminescence thermal quenching processes in ZnSe quantum dots. A theoretic fit on considering a two-step quenching processes well explained the experimental data. The apparent carrier concentration profile obtained from capacitance-voltage measurements exhibits an accumulation peak at the depth of about 100nm below the sample surface, which is in good agreement with the location of the quantum dot layer. The electronic ground state of ZnSe quantum dots is determined to be about 0.11 eV below the conduction band of ZnS, which is similar to that obtained by simulating the thermal quenching of ZnSe photoluminescence.

Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching

We measured the depth profiling of photoluminescence (PL) in cubic GaN films. The depth-resolved PL of normal grown GaN layers showed that the near-band-edge luminescence intensities of both cubic and wurtzite domains remained constant only until an etching depth of up to 2.7 mu m, but their ratio remained unchanged at all etching depths. Moreover, when a thin In0.1Ga0.9N layer was sandwiched between two GaN layers, the content of the wurtzite domains increased, and its distribution showed a dependence on thickness. As the reactive ion etching depth increased, the PL intensity ratio of cubic GaN to wurtzite domains increased. Based on the distribution, the strain relaxation, instead of the instability of cubic GaN at high temperature, was attributed to the origin of wurtzite domains. (C) 2000 Elsevier Science S.A. All rights reserved.

Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy

The structural characteristics of gallium nitride (GaN) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (GSMBE) have been investigated using high-resolution synchrotron irradiation X-ray diffraction and cathodoluminescence with a variable energy electron beam. Besides the well-known GaN hexagonal structure, a small portion of cubic phase GaN was observed. The X-ray measurements provide an essential means for the structural identification of the GaN layers. Arising from the variable penetration depth of the electron beam in the cathodoluminescence measurements, it was found that the fraction of the GaN cubic-phase typically increased as the probing depth was increased. The results suggest that the GaN cubic phase is mostly located near the interface between the substrate and GaN layer due to the initial nucleation.

Effect of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel

The objective of this paper is to investigate the effects of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel. The test section consists of a bottom silicon substrate bonded with a top glass cover. Three consecutive parts of an inlet fluid plenum, a central microchannel and an outlet fluid plenum were etched in the silicon substrate. The central microchannel had a width of 800 mu m and a depth of 30 mu m. Acetone liquid was used as the working fluid. High outlet vapor qualities were dealt with here. The flow pattern consists of a fluid triangle (shrinkage of the liquid films) and a connected long liquid rivulet, which is generated in the central microchannel in the timescale of milliseconds. The peculiar flow pattern is formed due to the following reasons: (1) the liquid rivulet tends to have a large contact area with the top hydrophilic channel surface of the glass cover, but a smaller contact area with the bottom silicon hydrophobic surface. (2) The temperature gradient in the chip width direction at the top channel surface of the glass cover not only causes the shrinkage of the liquid films in the central microchannel upstream, but also attracts the liquid rivulet populated near the microchannel centerline. (3) The zigzag pattern is formed due to the competition between the evaporation momentum forces at the vapor-liquid interfaces and the force due to the Marangoni effect. The former causes the rivulet to deviate from the channel centerline and the latter draws the rivulet toward the channel centerline. (4) The temperature gradient along the flow direction in the central microchannel downstream causes the breakup of the rivulet to form isolated droplets there. (5) Liquid stripes inside the upstream fluid triangle were caused by the small capillary number of the liquid film, at which the large surface tension force relative to the viscous force tends to populate the liquid film locally on the top glass cover surface.

Periodic bubble emission and appearance of an ordered bubble sequence (train) during condensation in a single microchannel

Condensation of steam in a single microchannel, silicon test section was investigated visually at low flow rates. The microchannel was rectangular in cross-section with a depth of 30 pm, a width of 800 mu m and a length of 5.0 mm, covered with a Pyrex glass to allow for visualization of the bubble formation process. By varying the cooling rate during condensation of the saturated water vapor, it was possible to control the shape, size and frequency of the bubbles formed. At low cooling rates using only natural air convection from the ambient environment, the flow pattern in the microchannel consisted of a nearly stable elongated bubble attached upstream (near the inlet) that pinched off into a train of elliptical bubbles downstream of the elongated bubble. It was observed that these elliptical bubbles were emitted periodically from the tip of the elongated bubble at a high frequency, with smaller size than the channel width. The shape of the emitted bubbles underwent modifications shortly after their generation until finally becoming a stable vertical ellipse, maintaining its shape and size as it flowed downstream at a constant speed. These periodically emitted elliptical bubbles thus formed an ordered bubble sequence (train). At higher cooling rates using chilled water in a copper heat sink attached to the test section, the bubble formation frequency increased significantly while the bubble size decreased, all the while forming a perfect bubble train flowing downstream of the microchannel. The emitted bubbles in this case immediately formed into a circular shape without any further modification after their separation from the elongated bubble upstream. The present study suggests that a method for controlling the size and generation frequency of microbubbles could be so developed, which may be of interest for microfluidic applications. The breakup of the elongated bubble is caused by the large Weber number at the tip of the elongated bubble induced by the maximum vapor velocity at the centerline of the microchannel inside the elongated bubble and the smaller surface tension force of water at the tip of the elongated bubble.

Absorbance kinetics of dye-doped systems with photochemical first order kinetics

Often it is assumed that absorbance decays in photochromic materials with the time dependence of the photochemical kinetics, i.e. exponentially for first order kinetics. Although this may hold in the limiting case of vanishing absorbance, deviations are to be expected for realistic samples, because the local photochemical kinetics slows down with increasing initial absorption and penetration depth of the radiation. We discuss the theory of the kinetics of initially homogeneous photochromic samples and derive analytical solutions. In extension of Tomlinson's theory we find an analytical solution that holds with good approximation even for samples that exhibit a small residual absorption in the saturation limit. The theoretical time dependence of the absorbance originating from photochemical first order kinetics of dye-doped systems is compared with experimental data published by Lafond et al. for fulgides doped in different polymer matrices. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

COHERENT MODEL FOR RESONANT-TUNNELING OF ELECTRONS IN DOUBLE-QUANTUM WELLS UNDER ELECTRIC-FIELDS

Taking the inhomogenous broadening of the electron energy levels into account, a coherent model of the resonant tunneling (RT) of electrons in double quantum wells is presented. The validity of the model is confirmed with the experiments [M. Nido et al., Proc. SPIE 1268, 177 (1990)], and shows that the tunneling process can be explained by the simple coherent theory even in the presence of the carrier scattering. We have discussed the dependence of resonant tunneling on the barrier thickness L(B) by introducing the contrast ratio LAMBDA and the full width at half depth of the RT valley, and found that LAMBDA first increases with increasing barrier thickness, reaches a maximum, and then decreases with a further increase of L(B), in striking contrast to the Fabry-Perot model where a monotonic increase of the peak-to-valley ratio is predicted. We attribute the reduction of LAMBDA with large L(B) to the energy broadening resulting from the carrier scattering. A monotonic decrease of the full width at half depth of the RT valley with an increase of L(R) is also found.

Absorption and luminescence of the surface states in ZnS nanoparticles

A broad absorption band around 500 nm is observed in ZnS nanoparticles. The absorption becomes more intensive and shifts to the blue as the particle size is decreased. The absorption energy is lower than the band gap of the particles and is considered to be caused by the surface states. This assignment is supported by the results of the fluorescence and of the thermoluminescence of the surface states. Both the absorption and the fluorescence reveal that the surface states are size dependent. The glow peak of the semiconductor particles is not varied as much upon decreasing size, indicating the trap depth of the surface states is not sensitive to the particle size. Considering these results, a new model on the size dependence of the surface states is proposed, which may explain our observations reasonably. (C) 1997 American Institute of Physics.

Contrastive study of two SESAMs for passive mode-locking in Nd:YVC>4 laser with low pump power

Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW

Performance of an improved logarithmic phase mask with optimized parameters in a wavefront-coding system

In two papers [Proc. SPIE 4471, 272-280 (2001) and Appl. Opt. 43, 2709-2721 (2004)], a logarithmic phase mask was proposed and proved to be effective in extending the depth of field; however, according to our research, this mask is not that perfect because the corresponding defocused modulation transfer function has large oscillations in the low-frequency region, even when the mask is optimized. So, in a previously published paper [Opt. Lett. 33, 1171-1173 (2008)], we proposed an improved logarithmic phase mask by making a small modification. The new mask can not only eliminate the drawbacks to a certain extent but can also be even less sensitive to focus errors according to Fisher information criteria. However, the performance comparison was carried out with the modified mask not being optimized, which was not reasonable. In this manuscript, we optimize the modified logarithmic phase mask first before analyzing its performance and more convincing results have been obtained based on the analysis of several frequently used metrics. (C) 2010 Optical Society of America

Comprehensive performance analysis of popular odd-symmetric phase masks used for wave-front coded imaging system

(973 Program）No.2009CB724006.

Surface erosion of GaN bombarded by highly charged Pb-208(q+)-Ions

Surface change of gallium nitride specimens after bombardment by highly charged Pbq+-ions (q = 25, 35) at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq+-ions and the ion dose. The erosion depth of the specimens in 60 incidence (tilted incidence) is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion (E-k = 360, 700 keV). On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A fiat terrace is formed.

Physical property measurement of therapeutic carbon ion beam in the shallow-seated tumor therapy terminal at HIRFL

For the first time the physical properties of therapeutic carbon-ion beam supplied by, the shallow-seated tumor therapy terminal at the Heavy Ion Research Facility in Lanzhou (HIRFL) are measured. For a 80.55MeV/u C-12 ion beam delivered to the therapy terminal, the homogeneity of irradiation fields is 73.48%, when the beam intensity varied in the range of 0.001-0.1nA (i.e. 1 X 10(6) - 1 X 10(8) particles per second). The stability of the beam intensity within a few minutes is estimated to be 80.87%. The depth-dose distribution of the beam at the isocenter of the therapy facility is measured, and the position of the high-dose Bragg peak is found to be located at the water-equivalent depth of 13.866mm. Based on the relationship between beam energy and Bragg peak position, the corresponding beam energy at the isocenter of the therapy terminal is evaluated to be 71.71MeV/u for the original 80.55MeV/u C-12 ion beam, which consisted basically with calculation. The readout of the previously-used air-free ionization chamber regarding absorbed dose is calibrated as well in this experiment. The results indicate that the performance of the therapy facility should be optimized further to meet the requirements of clinical trial.

Elastic Scattering of He-6 + p at 82.3 MeV/nucleon

Differential cross sections for the elastic scattering of halo nucleus He-6 on proton target were measured at 82.3 MeV/u. The experimental results are well reproduced by optical model calculations using global potential KD02 with a reduction of the depth of real volume part by a factor of 0.7. A systematic analysis shows that this behavior might be related to the weakly bound property of unstable nuclei.

Surface pigments,algal biomass profiles,and potential production of the euphotic layer:Relationships reinvestigated in view of remote-sensing applications

Maps of surface chlorophyllous pigment (Chl a + Pheo a) are currently produced from ocean color sensors. Transforming such maps into maps of primary production can be reliably done only by using light-production models in conjuction with additional information about the column-integrated pigment content and its vertical distribution. As a preliminary effort in this direction. $\ticksim 4,000$ vertical profiles pigment (Chl a + Pheo a) determined only in oceanic Case 1 waters have been statistically analyzed. They were scaled according to dimensionless depths (actual depth divided by the depth of the euphotic layer, $Z_e$) and expressed as dimensionless concentrations (actual concentration divided by the mean concentration within the euphotic layer). The depth $Z_e$ generally unknown, was computed with a previously develop bio-optical model. Highly sifnificant relationships were found allowing $\langle C \rangle_tot$, the pigment content of the euphotic layer, to be inferred from the surface concentration, $\bar C_pd$, observed within the layer of one penetration depth. According to their $\bar C_pd$ values (ranging from $0.01 to > 10 mg m^-3$), we categorized the profiles into seven trophic situations and computed a mean vertical profile for each. Between a quasi-uniform profile in eutrophic waters and a profile with a strong deep maximum in oligotrophic waters, the shape evolves rather regularly. The wellmixed cold waters, essentially in the Antarctic zone, have been separately examined. On average, their profiles are featureless, without deep maxima, whatever their trophic state. Averaged values their profiles are featureless, without deep maxima, whatever their trophic state. Averaged values their profiles are featureless, without deep maxima, whatever their trophic state. Averaged values of $ρ$, the ratio of Chl a tp (Chl a + Pheo a), have also been obtained for each trophic category. The energy stored by photosynthesizing algae, once normalized with respect to the integrated chlorophyll biomass $\langle C \rangle _tot $ is proportional to the available photosythetic energy at the surface via a parameter $ψ∗$ which is the cross-section for photosynthesis per unit of areal chlorophyll. By tanking advantage of the relative stability of $ψ∗.$ we can compute primary production from ocean color data acquired from space. For such a computation, inputs are the irradiance field at the ocean surface, the "surface" pigment from which $\langle C \rangle _tot$ can be derived, the mean $ρ value pertinent to the trophic situation as depicted by the $\bar C_pd or $\langle C \rangle _tot$ values, and the cross-section $ψ∗$. Instead of a contant $ψ∗.$ value, the mean profiles can be used; they allow the climatological field of the $ψ∗.$ parameter to be adjusted through the parallel use of a spectral light-production model.