Binding energy of a hydrogenic donor impurity in a rectangular parallelepiped-shaped quantum dot: Quantum confinement and Stark effects

We calculate the binding energy of a hydrogenic donor impurity in a rectangular parallelepiped-shaped quantum dot (QD) in the framework of effective-mass envelope-function theory using the plane wave basis. The variation of the binding energy with edge length, position of the impurity, and external electric field is studied in detail. A finite potential model is adopted in our calculations. Compared with the infinite potential model [C. I. Mendoza , Phys. Rev. B 71, 075330 (2005)], the following results are found: (1) if the impurity is located in the interior of the QD, our results give a smaller binding energy than the infinite potential model; (2) the binding energies are more sensitively dependent on the applied electric field in the finite potential model; (3) the infinite potential model cannot give correct results for a small QD edge length for any location of the impurity in the QD; (4) some degeneracy is lifted when the dot is no longer cubic. (C) 2007 American Institute of Physics.

Electronic structure and binding energy of a hydrogenic impurity in a hierarchically self-assembled GaAs/AlxGa1-xAs quantum dot

We calculate the electronic structures and binding energy of a hydrogenic impurity in a hierarchically self-assembled GaAs/AlxGa1-xAs quantum dot (QD) in the framework of effective-mass envelope-function theory. The variation of the electronic structures and binding energy with the QD structure parameters and the position of the impurity are studied in detail. We find that (1) acceptor impurity energy levels depend more sensitively on the size of the QD than those of a donor impurity; (2) all impurity energy levels strongly depend on the GaAs quantum well (QW) width; (3) a donor impurity in the QD has only one binding energy level except when the GaAs QW is large; (4) an acceptor impurity in the QD has two binding energy levels, which correspond to heavy- and light-hole quantum states; (5) the binding energy has a maximum value when the impurity is located below the symmetry axis along the growth direction; and (6) the binding energy has a minimum value when the impurity is located at the top corner of the QD. (c) 2006 American Institute of Physics.

Binding energy of positively and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells

Using a simple two-parameter wavefunction, we calculate variationally the binding energy of positively and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells for well widths from 10 to 300Angstrom. We consider the effect of effective mass, dielectric constant mismatch in the two materials, and the whole correlation among the particles. The results are discussed and compared in detail with previous experimental and theoretical results, which show fair agreement with them.

Energy band and acceptor binding energy of GaN and AlxGa1-xN

The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and AlxGa1-xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor for wurtzite GaN are 20 and 131, 97 meV, respectively, which are inconsistent with the recent experimental results. It is proposed that there are two kinds of acceptors in wurtzite GaN. One kind is the general acceptor such as C, substituting N, which satisfies the effective-mass theory, and the other includes Mg, Zn, Cd etc., the binding energy of which deviates from that given by the effective-mass theory. Experimentally, wurtzite GaN was grown by the MBE method, and the PL spectra were measured. Three main peaks are assigned to the DA transitions from the two kinds of acceptor. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. The binding energy of acceptor in ALN is about 239, 158 meV, that in AlxGa1-xN alloys (x approximate to 0.2) is 147, 111 meV, close to that in GaN. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells

The binding energy of an exciton bound to an ionized donor impurity (D+,X) located st the center or the edge in GaAs-AlxGa1-xAs quantum wells is calculated variationally for the well width from 10 to 300 Angstrom by using a two-parameter wave function, The theoretical results are discussed and compared with the previous experimental results.

Binding energy of excitons bound to neutral donors in two-dimensional semiconductors

The binding energies of excitons bound to neutral donors in two-dimensional (2D) semiconductors within the spherical-effective-mass approximation, which are nondegenerate energy bands, have been calculated by a variational method for a relevant range of the effective electron-to-hole mass ratio sigma. The ratio of the binding energy of a 2D exciton bound to a neutral donor to that of a 2D neutral donor is found to be from 0.58 to 0.10. In the limit of vanishing sigma and large sigma, the results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.

Energy bands and acceptor binding energies of GaN

The energy bands of zinc-blende and wurtzite GaN are calculated with the empirical pseudopotential method, and the pseudopotential parameters for Ga and N atoms are-given. The calculated energy bands are in agreement with those obtained by the ab initio method. The effective-mass theory for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN for both structures are given The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor are 24 and 142 meV for the zinc-blende structure, 20 and 131, and 97 meV for the wurtzite structure, respectively, which are consistent with recent experimental results. It is proposed that there are two kinds of acceptor in wurtzite GaN. One kind is the general acceptor such as C, which substitutes N, which satisfies the effective-mass theory. The other kind of acceptor includes Mg, Zn, Cd, etc., the binding energy of these accepters is deviated from that given by the effective mass theory. In this report, wurtzite GaN is grown by the molecular-beam epitaxy method, and the photoluminescence spectra were measured. Three main peaks are assigned to the donor-acceptor transitions from two kinds of accepters. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. [S0163-1829(99)15915-0].

Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress

We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X+) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of X and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed "time reordering'' scheme.

mobile agent system model based on servlet technology

A mobile agent system model based on the servlet technology is presented, the constitution and working process of the system are analyzed. The implementation of key parts of this model and the current development situation as well as the development trend of mobile agent technology are introduced. The mobile agent system model enhances its internal structure recognition and facilitates the system expansion and reformation. The remotely mobile agent control method by means of the protocol modification is presented.

一种基于Agent的自适应的分布式入侵检测系统

针对传统分布式入侵检测系统组件之间依赖程度大、系统不够健壮且入侵检测系统自身结构固定不能适应入侵的变化的问题,提出了一种基于Agent的自适应的分布式入侵检测系统(简称AAA-DIDS)·AAADIDS采用Agent概念重新构造系统的组件,改进了分布式入侵检测系统由于高层节点单一无冗余而产生的可靠性差的缺陷,从构造上克服了分布式入侵检测系统的脆弱性·同时,AAADIDS系统采用智能技术构建了自适应的入侵检测系统模型,增加了系统应对入侵行为变化的智能性·AAA-DIDS系统相对于传统的分布式入侵检测系统有效地提高了系统自身的可靠性和针对外界变化的适应能力·

一种用于软件过程建模的适应性Agent协商

大多软件过程模型是预定义的.在变化的应用环境中,需要由相应人员进行适应性调整.提出一种用于软件过程建模的适应性多边协商模型——AMNM-PA,其采用Agent封装软件过程中所涉及的个体,包含组织、团队、个人等,通过Agent间的协商动态、适应地建立针对给定软件项目的软件过程模型.AMNM-PA基于非静态有限阶段Markov决策过程,采用模型无关的Q学习算法选取协商策略,因此能够支持动态、非预知环境下的适应性协商,从而满足软件过程建模对环境的适应性需求.AMNM-PA已经实施于软件过程管理系统——SoftPM.

一种基于Agent的自适应软件过程模型

传统的软件过程模型大多是静态的、机械的、被动的,它们要求软件工程人员在描述软件过程时预期所有可能发生的情况,并且显式地定义这些问题的解决方案.当软件过程所处的环境发生变化时,软件过程无法自适应地对这些变更作出相应的调整.提出了一种基于Agent的自适应软件过程模型.在这种软件过程模型中,软件过程被描述为一组相互独立而对等的实体——软件过程Agent.这些软件过程Agent能够对软件过程环境的变化主动地、自治地作出反应,动态地确定和变更其行为以实现软件开发的目标.

基于Agent的智能交通体系及仿真

交通问题已成为全世界所共同关注的主要问题 ,如何运用现代的科技手段来缓解日益严峻的交通压力 ,是目前研究的重点。该文基于目前交通问题及交通系统发展的现状 ,结合计算机软件技术的最新成果———Agent技术 ,提出了基于Agent技术的智能交通控制的体系结构 ,论述了该结构的优点 ;并根据Agent的特点 ,介绍了运用Agent技术进行交通仿真的优势 ,探讨了具体采用Agent技术进行交通仿真的方法。

一种基于移动Agent的复合Web服务容错模型

现有的Web服务容错侧重于通过扩展Web服务标准来提供容错能力.由于Web服务标准体系本身不断发展变化,并且标准之间的兼容性问题依然存在,使得这些研究成果的可实施性较弱.文章提出一种基于移动Agent的复合Web服务容错模型--MAFTM模型,从系统层次而非标准层次来解决复合Web服务的容错问题.首先说明基于移动Agent的工作流与复合Web服务的关系.在此基础上,给出MAFTM模型,包括故障类型、复制机制、"exactly once"语义和一致性算法,并证明MAFTM模型的正确性.

智能交通仿真与车辆Agent决策策略的研究

文章介绍了Agent技术及特点,根据Agent的原理及其仿真的优势,着重叙述了Agent技术在交通仿真中的应用,详细探讨了基于Agent的智能仿真系统中车辆Agent的决策特点及模糊决策方法,同时,还分析了驾驶员因素对驾驶行为的影响。