Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells
| Data(s) |
2000
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|---|---|
| Resumo |
The binding energy of an exciton bound to an ionized donor impurity (D+,X) located st the center or the edge in GaAs-AlxGa1-xAs quantum wells is calculated variationally for the well width from 10 to 300 Angstrom by using a two-parameter wave function, The theoretical results are discussed and compared with the previous experimental results. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Liu JJ; Zhang SF; Kong XJ; Li SS .Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells ,CHINESE PHYSICS LETTERS,2000,17(5):358-359 |
| Palavras-Chave | #半导体物理 #2-DIMENSIONAL SEMICONDUCTORS #NEUTRAL DONORS #BIEXCITONS #PHOTOLUMINESCENCE |
| Tipo |
期刊论文 |
