Simultaneous three-photon-excited violet upconversion luminescence of Ce3+: Lu2Si2O7 single crystals by femtosecond laser irradiation

We found that Ce3+:Lu2Si2O7 single crystals could be excited at 800 nm by using a femtosecond Ti:sapphire laser. The emission spectra of Ce3+:Lu2Si2O7 crystals were the same for one-photon excitation at 267 nm as for excitation at 800 nm. The emission intensity of Ce3+: Lu2Si2O7 crystals was found to depend on the cube of the laser power at 800 nm, consistent with simultaneous absorption of three 800 nm photons. The measured value of the three-photon absorption cross section is sigma'(3) = 2.44 x 10(-77) cm(6) s(2). (c) 2006 Optical Society of America.

不同Yb掺杂量的Yb：Y3Al5O12晶体的光谱分析

采用提拉法生长了Yb^3＋掺杂量分别为5．4at％，16．3at％，27．1at％，53．6at％和100at％的Yb：Y3Al5O12晶体．系统地表征和分析了Yb^3＋掺杂量对晶体吸收光谱和荧光光谱的影响．随着Yb^3＋掺杂量的增加，各峰值吸收系数呈线性增加的趋势．应用Smakula公式计算了各吸收峰对应的振荡强度，并分析了Yb^3＋掺杂量对振荡强度的影响．当Yb^3＋掺杂量增加到27．1at％时观察到了荧光猝灭现象；当Yb^3＋掺杂量增加到53．6at％时，荧光光谱的线形发生了很大的变化。

高浓度掺Er^3＋铌酸锂晶体的光谱参数计算

用提拉法成功地生长了6mol％的高浓度掺铒铌酸锂晶体。测量了晶体的两个非偏振方向（X和Z）以及两个偏振方向（π和δ）的吸收光谱。高浓度掺铒铌酸锂晶体的吸收系数高，有利于提高泵浦效率。根据所测的吸收光谱用Judd-Ofelt理论拟合出了Er^3＋离子的强度参数Ωλ。所得的均方差结果显示偏振拟合的误差要小于非偏振拟合。利用偏振吸收数据计算了各能级跃迁的自发辐射跃迁几率（AJJ’）、辐射寿命（τ）、荧光分支比（β）和积分发射截面（σp）等参数，对计算结果进行了讨论并与其他文献的报道结果进行了比较。

Growth, etching morphology and spectra of LiAlO2 crystal

gamma-LiAlO2 single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X-ray rocking curve and chemical etching. The effects of air-annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiAlO2 were also investigated in detail. The results show that the as-grown crystal has very high quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec. Dislocation density in the middle part of the crystal is as low as about 3.0 x 10(3) cm(-2). The VTE-treated slice has larger FWHM value, etch pits density and absorption coefficient as compared with those of untreated and air-annealed slices, which indicates that the crystal quality became inferior after VTE treatment. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of carbon on the thermoluminescence and optically stimulated luminescence of α -Al2O3:C crystals

alpha-Al2O3:C crystal shows excellent thermoluminescence (TL) and optically stimulated luminescence (OSL) properties but the real role carbon plays in this crystal is still not clearly understood so far. In this work, alpha-Al2O3:C crystal doping with different amounts of carbon were grown by the temperature gradient technique, and TL and OSL properties of as-grown crystals were investigated. Additionally, a mechanism was proposed to explain the role of carbon in forming the TL and OSL properties of alpha-Al2O3:C. TL and OSL intensities of as-grown crystals increase with the increasing amount of carbon doping in the crystal, but no shift is found in the glow peak location at 465 K. As the amount of carbon doping in the crystals decreases, OSL decay rate becomes faster. With the increase in heating rate, the integral TL response of as-grown crystals decreases and glow peak shifts to higher temperatures. TL response decrease rate increases with the increasing amount of carbon doping in the crystals. All the TL and OSL response curves of as-grown crystals show linear-sublinear-saturation characteristic, and OSL dose response exhibits higher sensitivity and wider linear dose range than that of TL. The crystal doping with 5000 ppm carbon shows the best dosimetric properties. Carbon plays the role of a dopant in alpha-Al2O3:C crystal and four-valent carbon anions replace the two-valent anions of oxygen during the crystal growth process, and large amounts of oxygen vacancies were formed, which corresponds to the high absorption coefficient of F and F+ centers in the crystals.

棕色固氮菌突变株DJ35 中钼铁蛋白和HBP59 蛋白的研究—纯化特性及晶体生长

我们从A. vinelandii突变株DJ35中纯化得到了ΔnifE Av1，并通过与OP Av1相比较对其特性进行了研究。虽然ΔnifE Av1以四聚体形式(α2β2)存在，但却表现出两种天然电泳行为。与OP Av1相比，ΔnifE Av1中的金属含量较低，每个蛋白分子仅含9.96个铁原子、0.36个钼原子。OP Av1和ΔnifE Av1的吸收光谱相似，均在280 nm附近出现蛋白吸收峰，在300-600 nm波长范围内光吸收普遍降低，并无特征峰出现。虽然ΔnifE Av1可见光区域CD谱的摩尔消光系数（Δε）总比OP Av1小，但在520nm区域附近摩尔消光系数减少的相对值明显大于在450nm附近摩尔消光系数减少的相对值。ΔnifE Av1的EPR信号明显与OP Av1不同，在g≈3.7处的EPR信号完全消失，在g≈4.3 和2.0处的EPR信号强度也分别降低了75%和50%以上。ΔnifE Av1不能与Fe蛋白组成活性单位，但被FeMoco激活后可与Fe蛋白组成活性单位。上述结果表明, ΔnifE Av1不含FeMoco，但具有与OP Av1相同的P-cluster。 我们在纯化ΔnifE Av1的过程中，发现一个类似OP Av1的β亚基的污染蛋白，经MALDI-TOF质谱鉴定这种蛋白是棕色固氮菌中一预测基因的产物。通过改进纯化方法, 我们首次得到80%电泳纯的蛋白，并将其命名为HBP59蛋白。HBP59为一单体蛋白，分子量约为59k Da。金属测定结果表明每个蛋白分子中含有0.42个铁原子。HBP59蛋白的可见光谱表现出典型的血红素蛋白光谱特征，还原态的HBP59蛋白在421nm处有最大吸收峰，同时在517nm、556nm处有两个伴随肩峰出现, A421/A280仅为0.146。HBP59蛋白氧化后，吸收峰发生蓝移，最大吸收峰从421nm移到413nm，517nm和556nm处的肩峰消失，A413/A280为0.168。HBP59蛋白的可见光区圆二色谱比较复杂，正峰出现在420nm, 406nm, 379nm 和364nm; 其摩尔消光系数分别为0.75, 0.94, 0.68 和 0.99;负峰出现在433 nm 和392nm，其摩尔消光系数分别为-1.13 和-0.78。血红素滴定实验结果说明每个HBP59蛋白分子结合了0.1个血红素，但每个蛋白分子具有最大结合1个血红素的能力。这低结合能力与这低比率的比率是非常一致的。该蛋白对温度相对敏感，高于40℃蛋白开始沉淀。上述结果说明HBP59是一个结合具有低自旋和不对称的血红素的蛋白，它在菌体内可能并未扮演贮藏血红素的角色，而是可能参与血红素的运输或附着。 此外，经过结晶条件的大量筛选后获得了ΔnifE Av1和ΔnifH Av1的优质小单晶,并对HBP59的晶体培养进行了初步探索。

藻胆体的光谱特性光能传递

1．对嗜热蓝藻层理鞭枝藻(Mastigocladus laminosus)藻胆体的光谱特性和光能传递进行了研究。其完整藻胆体的吸收峰位于622 nm，室温荧光发射峰位于673 nm。在77K荧光发射光谱中，完整藻胆体的荧光峰只有一个，位于685 nm，是末端发射体1的荧光。在低浓度磷酸缓冲液中发生严重解离的藻胆体，其77K荧光发射光谱中有二个发射峰和一个发射肩。两个荧光发射峰分别位于644 nm和683 nm。前者为主峰，属于C-藻蓝蛋白的荧光，后者是次峰，属于末端发射体2的荧光。荧光发射肩位于660 nm附近，属于别藻蓝蛋白的荧光。据此，提出层理鞭枝藻藻胆体光能传递途径如下： 藻红蓝蛋白→c—藻蓝蛋白→别藻蓝蛋白→端发射体l、末端发射体2： 2．对嗜热蓝藻层理鞭枝藻藻胆体—类囊体膜的光谱特性和光能传递进行了研究。在吸收光谱中，其藻胆体——类囊体膜在可见光区域有5个峰，它们分别位于420 nm、438 nm、490 nm、624 nm和678 nm。420 nm、438 nm和678 nm为叶绿素a的吸收峰位置。490 nm是类胡罗卜素的吸收峰，624 nm是藻胆体的吸收峰。对藻胆体——类囊体膜用580 nm波长的光激发藻胆蛋白时，在室温荧光发射光谱中有一个发射峰和一个发射肩，分别位于657 nm和690 nm，前者属于藻胆蛋白的荧光，后者属于叶绿素a的荧光。这说明藻胆蛋白能将捕获的光能传递给类囊体膜上的叶绿素a。在77K荧光发射光谱中有4个峰，它们分别位于649 nm、660 nm、688 nm和730 nm。前二者属于藻胆蛋白的荧光，后二者属于叶绿素a的荧光。这同样说明藻胆蛋白能将捕获的光能传递给类囊体膜上的叶绿素a。当用436 nm波长光激发叶绿素a时，藻胆体——类囊体膜的室温荧光发射光谱中有两个荧光峰出现，位于685 nm的峰来源于光系统Ⅱ，位于713 nm的峰来源于系统I。这说明叶绿素a捕获的光能不能逆传递给藻胆体中的藻胆蛋白。在77K荧光发射光谱中也只有叶绿素a的荧光峰，位于695 nm的峰来源于光系统Ⅱ，位于730 nm的峰来源于光系统l。此结果同样说明叶绿素a捕获的光能不能逆传递给藻胆蛋白． 3．我们以多变鱼腥藻(Anabaena variabilis)为材料，对其藻胆体核心和藻蓝蛋白进行了重组实验，得到了具有光能传递效率的藻胆体核心——藻蓝蛋白复合物。在吸收光谱中，藻胆体核心有一吸收峰和一个吸收肩，分别位于654 nm和600 nm。藻蓝蛋白的吸收光谱中只有一个峰，位于620 nm．重组样品的吸收光谱有一吸收峰和一吸收肩，分别位于654 nm和620 nm．由于620 nm与654 nm的吸收比远大于核心的600 nm与654 nm的吸收比，因此，可以认为部分藻蓝蛋白已与核心重组。在室温荧光发射光谱中，藻胆体核心只有一个峰，位于676 nm。藻蓝蛋白只有一个峰，位于653 nm。重组样品有一荧光发射峰和一荧光发射肩，分别在669 nm和650 nm附近。669 nm荧光来源于核心，650 nm荧光来源于藻蓝蛋白。重组后的核心的650 nm荧光显著大于未重组的核心，这也说明部分藻蓝蛋白与核心已重组．在77K荧光发射光谱中，藻蓝蛋白只有一个峰，位于655 nm。藻胆体核心有二个峰，分别位于666 nm和686 nm。重组样品有两个荧光发射峰和一荧光发射肩，分别位于666 nm、683 nm和648 nm附近．重组的核心的别藻蓝蛋白的荧光(F666)和藻蓝蛋白的荧光(F648)都强于未重组的核心。这一结果同样说明有藻胆体——藻蓝蛋白复合物生成。 除以上研究工作之外，我们还对多变鱼腥藻藻胆体在解离过程中的光谱特性及光能传递、藻胆体——类囊体膜的光谱特性及光能传递、藻胆体解离重组、藻胆体核心在低浓度磷酸缓冲液中的光谱特性、以及温度对藻胆体核心的影响等进行了研究。研究结果有待整理。 本文编写：PBS：藻胆体;PEB：藻红胆素;PE：藻红蛋白;PUB:藻尿胆素;PEC：藻红蓝蛋白;PCB:藻蓝胆素;PC：藻蓝蛋白;PSⅡ：光系统Ⅱ;APC:别藻蓝蛋白;PS I：光系统I;TE:末端发射体

Electronic structure and optical properties of GaN with Mn-doping

Calculations of the electronic structure and the density of states of GaN with Mn are carried out by means of first-principles plane-wave pesudopotential method based on density functional theory. The results reveal a 100% spin polarized impurity band in band structure of Ga1-xMnxN due to hybridization of Mn 3d and N 2p orbitals. The material is half metallic and suited for spin injectors. In addition, a peak of refractive index can be observed near the energy gap. The absorption coefficient increases in the UV region with the increase of the Mn content.

Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure

The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by DC and AC methods in hydrogenated silicon films with mixed amorphous-nanocrystalline structure are presented. A series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. The increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. The comparison of the absorption spectra obtained by DC and AC methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. However we found a dramatic discrepancy between the absorption spectra obtained by DC and AC constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. AC constant photocurrent method gives higher absorption coefficient than DC constant photocurrent method in the photon energy range of 1.2-1.7 eV. This result indicates the possibility of crystalline grains contribution to absorption spectra measured by AC constant photocurrent method in silicon films with intermediate crystalline grain volume fraction. (c) 2008 Published by Elsevier B.V.

Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector

Considering tensile-strained p-type Si/Si1-yGey quantum wells grown on a relaxed Si1-xGex ( 0 0 1) virtual substrate ( y < x), the hole subband structure and the effective masses of the first bound hole state in the quantum wells are calculated by using the 6 x 6 k center dot p method. Designs for tensile-strained p-type quantum well infrared photodetectors ( QWIPs) based on the bound-to-quasi-bound transitions are discussed, which are expected to retain the ability of coupling normally incident infrared radiation without any grating couplers, have lower dark current than n-type QWIPs and also have a larger absorption coefficient and better transport characteristics than normal unstrained or compressive-strained p-type QWIPs.

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550 degrees C to 700 degrees C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100 degrees C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600 degrees C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600 degrees C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600 degrees C, the Hall mobility achieves up to 938 cm(2)/Vs with electron concentration of 3.9 x 10(18) cm(-3).

Photoluminescence characterization of nanocrystalline ZnO array

High-density and uniform well-aligned ZnO sub-micron rods are synthesized on the silicon substrate over a large area. The morphology, and structure of the ZnO sub-micron rods are investigated by x-ray diffraction, transmission electron microscopy and Raman spectra. It is found that the ZnO sub-micron rods are of high crystal quality with the diameter in the range of 400-600 nm and the length of several micrometres long. The optical properties were studied bill photoluminescence spectra. The results show that the intensity of the ultraviolet emission at 3.3 eV is rather high, meanwhile the deep level transition centred at about 2.38 eV is weak. The free exciton emission could also be observed at low, temperature, which implies the high optical quality of the ZnO sub-micron rods. This growth technique provides one effective way to fabricate the high crystal quality ZnO nanowires array, which is very important for potential applications in the new-type optoelectronic nanodevices.

Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells

Based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility lifetime product and bandgap were estimated by means of effective-medium theory. And then computer simulation of a-Si: H/mu c-Si: H diphasic thin film solar cells was performed. It was shown that the more crystalline fraction in the diphasic silicon films, the higher short circuit density, the lower open-circuit voltage and the lower efficiency. From the spectral response, we can see that the response in long wave region was improved significantly with increasing crystalline fraction in the silicon films. Taking Lambertian back refraction into account, the diphasic silicon films with 40%-50% crystalline fraction was considered to be the best intrinsic layer for the bottom solar cell in micromorph tandem.

Concentration effect of Mn2+ on the photoluminescence of ZnS : Mn nanocrystals

Mn-doped ZnS nanocrystals of about 3 nm diameter were synthesized by a wet chemical method. X-ray diffraction (XRD) measurements showed that the nanocrystals have the structure of cubic zinc blende. The broadening of the XRD lines is indicative of nanomaterials. Room temperature photoluminescence (PL) spectrum of the undoped sample only exhibited a defected-related blue emission band. But for the doped samples, an orange emission from the Mn2+ T-4(1)-(6)A(1) transition was also observed, apart from the blue emission. The peak position (600 nm) of the Mn2+ emission was shifted to longer wavelength compared to that (584 nm) of bulk ZnS:Mn. With the increase of the Mn2+ concentration, the PL of ZnS:Mn was significantly enhanced. The concentration quenching effect was not observed in our experiments. Such PL phenomena were attributed to the absence of Mn2+ pairs in a single ZnS:Mn nanocrystal, considering the nonradiative energy transfer between Mn2+ ions based on the Poisson approximation. (c) 2005 Elsevier B.V. All rights reserved.

Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well

A self-consistent solution of conduction band profile and subband energies for AlxGa1-xN-GaN quantum well is presented by solving the Schrodinger and Poisson equations. A new method is introduced to deal with the accumulation of the immobile charges at the AlxGa1-xN-GaN interface caused by spontaneous and piezoelectric polarization in the process of solving the Poisson equation. The effect of spontaneous and piezoelectric polarization is taken into account in the calculation. It also includes the effect of exchange-correlation to the one electron potential on the Coulomb interaction. Our analysis is based on the one electron effective-mass approximation and charge conservation condition. Based on this model, the electron wave functions and the conduction band structure are derived. We calculate the intersubband transition wavelength lambda(21) for different Al molar fraction of barrier and thickness of well. The calculated result can fit to the experimental data well. The dependence of the absorption coefficient a on the well width and the doping density is also investigated theoretically. (C) 2004 American Vacuum Society.