Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd YVO4 laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%. (C) 2008 Elsevier B.V. All rights reserved.

Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection

This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source. (C) 2009 Optical Society of America

Research on improved methods of reduction of bend loss of silicon-on-insulator waveguides

Improved methods of reduction of bend loss of silicon-on-insulator waveguides were simulated and analyzed by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM). The simulation results indicate that two different methods, one of which are introducing an offset at the junction of two waveguides and the other is etching groove at the outside of bend waveguide, can decrease bend loss. And the later one is more effective. Meanwhile, experiments validate them. By etching groove, the insertion loss of bend waveguide of R = 16mm, transverse displacement 70mum was decreased 5dB. And its bend loss was almost eliminated.

Self-assembling of submicrometer three-dimensional photonic crystals in concave microzones etched on silicon substrates

By vertical sedimentation and oblique titration, silica microspheres were grown in different shapes of concave microzones that were etched on a (100) p-silicon substrate. Through scanning electron microscope observation and optical reflective spectra measurement, sedimentation of microspheres in those microzones was compared. An index was introduced to judge the efficiency of sedimentation. The comparison demonstrates that regular hexagons and triangles facilitate the growth of photonic crystals the most. (c) 2006 Optical Society of America

Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 mu J, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz. (C) 2005 Elsevier B.V. All rights reserved.

Environmentally stable ytterbium figure-of-eight fiber laser producing 177-fs pulses

Pulses of 177 fs and 1035 nm, with average power of 1.2 mW, have been generated directly from a passively mode-locked Yb-doped figure-of-eight fiber laser, with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. To our knowledge, these are the shortest pulses ever to come from a passively mode-locked Yb-doped figure-of-eight fiber laser. This represents a 5-fold reduction in pulse duration compared with that of previously reported passively mode-locked Yb-doped figure-of-eight fiber lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0 MHz. (c) 2007 Elsevier B.V. All rights reserved.

Generation of 207-femtosecond pulses from a ytterbium figure-of-eight fibre laser

We report the generation of 207-fs pulses with 1.2mW average power at 1036 nm directly from a passively mode-locked Yb-doped fibre laser with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. These results imply a 4-fold reduction in pulse duration over previously reported figure-of-eight cavity passively mode-locked Yb-doped fibre lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0MHz. On the other hand, this laser offers a cleaner spectrum and greater stability and is completely self-starting.

24-二甲基戊二稀土化合物的合成

本文叙述了2.4-二甲基戊二烯基稀土金属有机化合物的合成并通过元素分析，红外光谱、核磁共振谱及质谱的鉴定。测定了Gd(2.4-GH_(11))_3的单晶结构，此外还合成了（2.4-GH_(11)K.TMEDA及K_2C_8H_8·3THF并也测定了它们的晶体结构。在所合成化合物的红外光谱中，没有属于C=C双键的吸收峰，表明分子中配位体以η~5形式的大π键体系与稀土金属离子结合，在Ln(2.4-GH_(11))_2Cl·TMF和Ln(2.4-GH_(11))Cl_2·GH_THF的红外光谱中，于1060波数附近出现一强而宽的吸收峰，即化合物中有四氢呋喃分子络合。化合物的室温NMR谱有四个吸收峰，2.4-二甲基戊二烯配位体可能为η~5平面∪或W构型。化合物的水解'H-NMR谱与质谱都证实水解产物为2.4－二甲基－1.3－戊二烯。它是－2.4二甲基戊二烯阴离子水解所得的唯一产物，它表明化合物中的配位体确为2.4－二甲基戊二烯阴离子。(2.4-GH_(11))_2Cl·TMDA配合物晶体结构是应用低温X－射线衍射技术用Nicolet R_3 M/E型四园衍射仪LT－1低温装置并利用重原子法测定的最小二乘法精修至收敛时的一致性因子R=0.055. Rw=0.057。晶体属单斜晶系P21/n空间群。晶胞参数a=11.322(4)A, b=9.242(3)A, c=15.956(5)A. β=106.70(3)分子中2.4－二甲基戊二烯阴离子呈平面∪构型。钾离子与四甲基乙二胺二啮体结合形成的络合阳离子和2.4-二甲基戊二烯阴离子相间排列形成无限链状结构分子。2.4－二甲基戊二烯阴离子的C－C键长明显分为中间与外端C－C键两组。外端组C－C键双性质较强键长较短。表明C3具有负电荷的共振杂化体贡献较大。分子中K－C键最短的是K-C(1.5)。而不是具有较多负电荷的C3－K键。这可能是由于几何因素造成的。K_2C_8H_8·3THF的晶体结构是采用与前者相同的方法测定的。它属三斜晶系，PT空间群，晶胞参数a=10.263(3)A, b=13.157(4)A, c=9.443A, α=87.51(2)°, β=114.93(2)°, γ=76.81(2)°. V=1111.6A, R=0.051. 晶体中负二价的环辛四烯阴离呈平面构型，具有中心对称性，两侧与两中心对称相关的钾离子连接，相邻的非等效的钾离子间通过两四氢呋喃分子的氧原子相连接，从而形成了无限链状结构的分子。环辛四烯反映了Huckel的4n+2芳香性规则。该结构的特别之处在于四氢呋喃分子的氧原子以桥键形式与两个钾离子同时连接。而这种形式的桥键在其它化合物中似还未发现。Go(2.4-GH_(11))_3的晶体结构亦是采用与前述相同的方法测定的。其晶体为三斜晶系，PT空间群，晶胞参数a=12.541A, b=12.853A, c=8.432A, α=91.44°, β=108.61°, γ=117.97°, V=112.54A~3. 结构测定表明，Gd(2.4-GH_(11))_3分子具有C_3h对称性。三个配位体阴离了的九个带负电荷的碳原子近似以三帽三角棱柱形式与钆离子配位。分子中2.4－二甲基戊二烯阴离子的C－C键长－亦分为而组。外端C－C键较中间C－C键强，键长较短，亦表明C3具有较多的负电荷。2.4－二甲基戊二烯阴离子本身近似呈平面∪构型。C2,C4偏离由C1 C3 C5三碳原子构成的平面0.067A。方向上远离中心钆离子。可能在此以离子性为主的化合物中，钆离子与不带电荷的C2 C4间的相互作用有些排斥性质。与Nd(2.4-GH_(11))_3不同的是，在Gd(2.4-GH_(11))_3分子中，Gd-(C(1,5）键最短，而不是Gd-C(3)键。这可能是由于钆离子的半径较小，化合物的空间位阻效应较大所致。

High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

高电荷态离子~(207)Pb~(q+)(24≤q≤36)与Si(110)固体表面作用的电子发射研究

报道了利用兰州重离子加速器国家实验室ECR源引出的高电荷态离子207Pbq+(24≤q≤36)入射到Si(110)表面产生的电子发射的实验测量结果.结果表明,高电荷态离子与固体表面相互作用产生的电子发射产额Y与入射离子的电荷态q、入射角度ψ和入射能量E都有很强的关联.首次发现,电子发射产额Y与入射角度ψ间有接近1/tanψ的关系.理论分析认为,这些过程与基于经典过垒模型的势能电子发射过程密切相关.

Electron emission induced by the interaction of highly charged ions Pb-207(q+) (24 <= q <= 36) with solid surface of Si(110)

The electron emission induced by highly charged ions Pb-207(q+) (24 <= q <= 36) interacting with Si(110) surface is reported. The result shows that the electron emission yield Y has a strong dependence on the projectile charge state q, incidence angle psi and impact energy E. In fitting the experimental data we found a nearly 1/tan psi dependence of Y. Theoretical analysis shows that these processes are closely related to the process of potential electron emission based on the classical over-the-barrier model.