Synthesis and surface morphology of tetraaniline-block-poly(L-lactate) diblock oligomers

Tetraaniline-block-poly(L-lactide) diblock oligomers are synthesized via ring-opening polymerization. The diblock oligomers cast from all L-lactide selective solvent (chloroform) show spherical aggregates for the leucoemeraldine state, and ring-like structures that are composed of much smaller spherical aggregates for the emeraldine state. The formation mechanisms of the two different surface morphologies are discussed in detail.

IN-SITU AFM STUDY OF THE SURFACE-MORPHOLOGY OF POLYPYRROLE FILM

In this paper we focus on the surface morphology of polypyrrole film by using in situ atomic force microscopy (AFM). The formation process of polypyrrole film and the transformation process of the film from the oxidized to reduced state were clearly observed.

Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing

Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then,the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration,～20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20～25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 × 10~(10)cm~(-2). The surface morphology evolution is investigated by AFM.

Transformation from ordered islands to holes in phase-separating P2VP/PS blend films by adding triton X-100

Our previous investigation showed that the ordered hexagonal island pattern in the phase-separating polymeric blend films of polystyrene and poly(2-vinylpyridine) (PS/P2VP) formed due to the convection effect by proper control of PS molecular weight, solvent evaporation rate, and the weight ratio of PS to P2VP. In this paper, we further illustrate that, by adding a proper amount of the surfactant Triton X-100 to the PS/P2VP toluene solution, the ordered hexagonal island pattern can be transformed to the ordered honeycomb pattern. The effects of the amount of Triton X-100 on the surface morphology evolution and the pattern transformation are discussed in terms of the collapse of Triton X-100, phase separation between Triton X-100/P2VP and PS, the interfacial interaction between Triton X-100/P2VP and the mica substrate, and the Benard-Marangoni convection.

Effects of the morphology of ZnO/Ag interface on the surface-plasmon-enhanced emission of ZnO films

The effects of the surface morphology of Ag on the surface-plasmon-enhanced emission of ZnO films have been studied for a ZnO/Ag/Si system by photoluminescence spectroscopy and atomic force microscopy. The results indicate that the enhancement of ZnO ultraviolet emission is dependent on the deposition conditions of the Ag interlayers. By examining the dependence of the enhancement ratio of surface-plasmon-mediated emission on the characteristic parameters of Ag surface morphology, we found that the surface plasmon coupling to light is determined by both the Ag particle size and density.

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

The morphological evolution of GaN thin films grown on sapphire by metalorganic chemical vapor deposition was demonstrated to depend strongly on the growth pressure of GaN nucleation layer (NL). For the commonly used two-step growth process, a change in deposition pressure of NL greatly influences the growth mode and morphological evolution of the following GaN epitaxy. By means of atomic force microscopy and scanning electron microscope, it is shown that the initial density and the spacing of nucleation sites on the NL and subsequently the growth mode of FIT GaN epilayer may be directly controlled by tailoring the initial low temperature NL growth pressure. A mode is proposed to explain the TD reduction for NL grown at relatively high reactor pressure. (C) 2003 Elsevier B.V. All rights reserved.

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

GIUSAXS and AFM Studies on Surface Reconstruction of Latex Thin Films during Thermal Treatment

The structural evolution of a single-layer latex film during annealing was studied via grazing incidence ultrasmall-angle X-ray scattering (GIUSAXS) and atomic force microscopy (AFM). The latex particles were composed of a low-T-g (-54 degrees C) core (n-butylacrylate, 30 wt %) and a high-T-g (41 degrees C) shell (t-butylacrylate, 70 wt %) and had an overall diameter of about 500 nm. GIUSAXS data indicate that the q(y) scan at q(z) = 0.27 nm(-1) (out-of-plane scan) contains information about both the structure factor and the form factor. The GIUSAXS data on latex films annealed at various temperatures ranging from room temperature to 140 degrees C indicate that the structure of the latex thin film beneath the surface changed significantly. The evolution of the out-of-plane scan plot reveals the surface reconstruction of the film. Furthermore, we also followed the time-dependent behavior of structural evolution when the latex film was annealed at a relatively low temperature (60 degrees C) where restructuring within the film can be followed that cannot be detected by AFM, which detects only surface morphology.

Crystalline morphology of poly(L-lactic acid) thin films

Crystalline morphologies of spin-coated poly(L-lactic acid) (PLLA) thin films under different conditions are investigated mainly with atomic force microscopy (AFM) technique. When PLLA concentration in chloroform is varied from 0.01 to 1% gradually, disordered structure, rod-shape and larger spheres aggregates are observed in thin films subsequently. Under different annealing temperature, such as at 78, 102, 122 degrees C, respectively, we can find most rod-like crystalline aggregates. Interestingly, we observed that nucleation sites locate at the edge of the holes at the original crystalline stage. Then, these holes developed to form chrysanthemum-like and rods subsequently with annealing time meanwhile the size and the shape of crystalline aggregate are changed. In addition. effect of substrate and solvent on morphology is also discussed. On the other hand, the possible mechanism of crystalline morphology evolution is proposed.

Two critical crack propagating velocities for PMMA fracture surface

Ultrasonic fractography and scanning electronic microscopy (SEM) are used to determine the direct relationship between the fracture surface morphology and the main crack velocity during the rapid rupture of polymethylmethacrylate (PMMA). Two critical crack velocities are found for the fracture. Quasi-parabolic markings will appear when the crack speed exceeds the first critical speed. Crack propagating at speed above the second critical speed leaves a thicket of small branches penetrating the surface behind them. Both critical speeds are functions of the thickness of the specimens.

Multi-scale analysis of AFM tip and surface interactions

Thoroughly understanding AFM tip-surface interactions is crucial for many experimental studies and applications. It is important to realize that despite its simple appearance, the system of tip and sample surface involves multiscale interactions. In fact, the system is governed by a combination of molecular force (like the van der Waals force), its macroscopic representations (such as surface force) and gravitational force (a macroscopic force). Hence, in the system, various length scales are operative, from sub-nanoscale (at the molecular level) to the macroscopic scale. By integrating molecular forces into continuum equations, we performed a multiscale analysis and revealed the nonlocality effect between a tip and a rough solid surface and the mechanism governing liquid surface deformation and jumping. The results have several significant implications for practical applications. For instance, nonlocality may affect the measurement accuracy of surface morphology. At the critical state of liquid surface jump, the ratio of the gap between a tip and a liquid dome (delta) over the dome height (y(o)) is approximately (n-4) (for a large tip), which depends on the power law exponent n of the molecular interaction energy. These findings demonstrate that the multiscale analysis is not only useful but also necessary in the understanding of practical phenomena involving molecular forces. (c) 2007 Elsevier Ltd. All rights reserved.

氧分压对电子束蒸发SiO2薄膜机械性质和光学性质的影响

采用ZYGO MarkⅢ-GPI数字波面干涉仪、NamoScopeⅢa型原子力显微镜对不同氧分压下电子束蒸发方法制备的SiO2薄膜中的残余应力及表面形貌进行了研究，结果发现：随着氧分压的增大，薄膜中的压应力值逐渐减小，最后变为张应力状态；同时薄膜的表面粗糙度也随着氧分压的增大而逐渐增大，另外，折射率对氧分压也非常敏感，随着氧分压的增大呈现出了减小的趋势，这些现象主要是由于氧分压的改变使得SiO2薄膜结构发生了变化引起的。

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

(110) oriented ZnO thin films were epitaxially prepared on (001) SrTiO3 single crystal substrates by a pulsed laser deposition method. The evolution of structure, surface morphology, and electrical conductivity of ZnO films was investigated on changing the growth temperature. Two domain configurations with 90 degrees rotation to each other in the film plane were found to exist to reduce the lattice mismatch between the films and substrates. In the measured temperature range between 80 K and 300 K, the electrical conductivity can be perfectly fitted by a formula of a (T) = sigma(0) + aT(b/2). implying that the electron-phonon scattering might have a significant contribution to the conductivity. (C) 2008 Elsevier Ltd. All rights reserved.

Temperature dependence of surface quantum dots grown under frequent growth interruption

We grow In-GaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption in MBE system. It is found that because of the extreme growth condition, QDs exhibit a thick wetting layer, large QD height value and special surface morphology which is attributed to the In segregation effect. Temperature dependence of photoluminescence measurement shows that this kind of QDs has a good thermal stability which is explained in terms of a "group coupling" model put forward by us. (C) 2007 Elsevier B.V. All rights reserved.