低pH值对大型溞（Daphnia magna Straus）存活、生长和生殖的影响

在静置换水条件下，研究了低ｐＨ值对大型存活、生长和生殖的影响。结果表明，在２５±１℃下，急性试验低ｐＨ值对大型的２４ｈ和４８ｈＬＬ５０值及其９５％可信限分别为ｐＨ值４．６６±０．１９和４．９４±０．２０。慢性试验进行了１４天，对存活和生长，ｐＨ值１．７５有影响，ｐＨ值５．０没有影响；对生殖，ｐＨ值５．０有影响，ｐＨ值５．５没有影响。显示出低ｐＨ值对大型的毒性阈限在ｐＨ值５．００－５．５０之间。

低pH对鱼类胚胎发育、鱼苗生长及鳃组织损伤影响的研究

本文研究了低pH水平对鱼类的胚胎,鱼苗和鱼种的影响以及鱼鳃的组织学观察。在硬水环境,pH≤4.5时,对泥鳅胚胎发育有严重影响。胚胎在低pH水平下,发育进程明显地迟缓。pH≤5.5时,泥鳅幼苗的生长受到抑制;在软水环境,pH≤4.5时,影响草鱼苗和幼鱼的存活率。低pH水平加上铝则对鱼类呈现出协同毒性。低pH使鱼鳃直接遭受严重的损害:出现大量的粘液、渗血、鳃上皮肿胀和脱落,组织增生和融合。

低pH和铝对几种淡水鱼类早期生活阶段的影响

在实验室条件下,把早期生活阶段的白链(Hyhophthalmichthys molitrix)、鳙鱼(Arist-ichthys nobilis)和草鱼(Ctenopharyngodon idellus)突然置于一系列低pH值水中,以测试产生毒性影响的pH水平.在受试的三种鱼中,未发现对低pH的敏感性有显著差异,但在发育过程中其敏感性逐渐降低.在pH5.0的水中,Al(0.1—16mg/L)对草鱼仔鱼毒性测试结果表明,96h的LC_(50)为0.26mg/L(0.21—0.31mg/L),致死阈浓度为0.

低pH对草鱼呼吸活动和耗氧代谢的影响

研究了低pH(6.0—3.6)对草鱼呼吸活动机能及耗氧代谢的影响.结果表明,在pH4.6—3.6条件下,草鱼呼吸和气体代谢活动受干扰的程度随酸度增大而急剧加重.其具体表现为:呼吸率加快,咳嗽反应增加,呼吸深度加大.耗氧率起始升高继而迅速下降,并在极端pH(3.6)下最终引起机体组织缺氧而致死.对于pH5.6,草鱼各类呼吸与代谢指标未受明显影响,基本属于正常.供试草鱼对低pH反应的灵敏程度依次为:咳嗽率>呼吸率>耗氧率>呼吸深度.

低pH对草鱼血液酸碱平衡的影响

研究了低pH(6.0—4.0)对草鱼血液酸碱平衡、p_(o2)及p_(co2)的影响,结果表明,低pH引起草鱼严重的酸血症.亚致死pH(6.0—5.0)时,血液酸碱平衡的影响主要表现为碱贮备[HCO_3]的丧失,血液pH的明显下降经机体缓冲调节可趋于稳定.致死低pH(4.0)时,血液pN和[HCO_3]下降均非常显著,并在96h内随酸化时间延长而日趋严重.仅在pH≤4.0的酸水中草鱼存在低氧症影响问题.草鱼是一种酸敏感性鱼类,为确保成鱼在天然水体的生存和繁育,水质pH至少应维持在6.0以上.

五种水蛭对不同pH值的生物效应

本文论述了使用常规试验方法研究5种水蛭:宽身舌蛭(Glossiphonia lata)、八目石蛭(Erpobdella octoculata)、光润金线蛭(Whitmania laevis)、尖细金线蛭(Whitmania acranulata)和日本医蛭(Hirudo nipponia)对12个pH值的24—96小时急性生物效应。结果表明:稻田3个种(尖细金线蛭,光润金线蛭和日本医蛭)均较湖泊近岸2个种(八目石蛭和宽身舌蛭)对pH值的变化要敏感,其中尖细金线蛭最敏感(pH6.0—7.2),八目石蛭的忍耐

Au@Si-n: Growth behavior, stability and electronic structure

The configurations, stability, and electronic structure of AuSin (n = 1-16) clusters have been investigated within the framework of the density functional theory at the B3PW91/LanL2DZ and PW91/DNP levels. The results show that the Au atom begins to occupy the interior site for cages as small as Si-11 and for Si-12 the Au atom completely falls into the interior site forming Au@Si-12 cage. A relatively large embedding energy and small HOMO-LUMO gap are also found for this Au@Si-12 structure indicating enhanced chemical activity and good electronic transfer properties. All these make Au@Si-12 attractive for cluster-assembled materials.

Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts

Under identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. (c) 2006 American Institute of Physics.

Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts

The Schottky behaviour of Ni/Au contact on n-GaN was investigated under various annealing conditions by current-voltage (I-V) measurements. A non-linear fitting method was used to extract the contact parameters from the I-V characteristic curves. Experimental results indicate that high quality Schottky contact with a barrier height and ideality factor of 0.86 +/- 0.02 eV and 1.19 +/- 0.02 eV, respectively, can be obtained under 5 min annealing at 600degreesC in N-2 ambience.

Electroluminescence from Au/(SiO2/Si/SiO2) nanometer double barrier/p-Si structures and its mechanism

SiO2/Si/SiO2 nanometer double barriers (SSSNDB) with Si layers of twenty-seven different thicknesses in a range of 1-5 nm with an interval of 0.2 nm have been deposited on p-Si substrates using two-target alternative magnetron sputtering. Electroluminescence (EL) from the semitransparent Au film/SSSNDB/p-Si diodes and from a control diode without any Si layer have been observed under forward bias. Each EL spectrum of all these diodes can be fitted by two Gaussian bands with peak energies of 1.82 and 2.25 eV, and full widths at half maximum of 0.38 and 0.69 eV, respectively. It is found that the current, EL peak wavelength and intensities of the two Gaussian bands of the Au/SSSNDB/p-Si structure oscillate synchronously with increasing Si layer thickness with a period corresponding to half a de Broglie wavelength of the carriers. The experimental results strongly indicate that the EL originates mainly from two types of luminescence centres with energies of 1.82 and 2.25 eV in the SiO2 barriers, rather than from the nanometer Si well in the SSSNDB. The EL mechanism is discussed in detail.

Quantifying the effectiveness of SiO2/Au light trapping nanoshells for thin film poly-Si solar cells

In order to enhance light absorption of thin film poly-crystalline silicon (TF poly-Si) solar cells over a broad spectral range, and quantify the effectiveness of nanoshell light trapping structure over the full solar spectrum in theory, the effective photon trapping flux (EPTF) and effective photon trapping efficiency (EPTE) were firstly proposed by considering both the external quantum efficiency of TF poly-Si solar cell and scattering properties of light trapping structures. The EPTF, EPTE and scattering spectrum exhibit different behaviors depending on the geometric size and density of nanoshells that form the light trapping layer. With an optimum size and density of SiO2/Au nanoshell light trapping layer, the EPTE could reach up to 40% due to the enhancement of light trapping over a broad spectral range, especially from 500 to 800 nm.

Tunable optical properties of nano-Au on vanadium dioxide

The optical properties of Au nanoparticles deposited on thermochromic thin films of VO2 are investigated using spectroscopy. A localized modification on the transmittance spectrum of VO2 film is formed due to the presence of Au nanoparticles which exhibit localized surface plasmon resonance (LSPR) in the visible-near IR region. The position of the modification wavelength region shows a strong dependence on the Au mass thickness and shifts toward the red as it increases. On the other hand, it was found that the LSPR of Au nanoparticles can be thermally tunable because of the thermochromism of the supporting material of VO2. The LSPR wavelength, lambda(SPR), shifts to the blue with increasing temperature, and shifts back to the red as temperature decreases. A fine tuning is achieved when the temperature is increased in a stepwise manner.

Electron injection assisted phase transition in a nano-Au-VO2 junction

The semiconductor-metal transition of vanadium dioxide (VO2) thin films epitaxially grown on C-plane sapphire is studied by depositing Au nanoparticles onto the thermochromic films forming a metal-semiconductor contact, namely, a nano-Au-VO2 junction. It reveals that Au nanoparticles have a marked effect on the reduction in the phase transition temperature of VO2. A process of electron injection in which electrons flow from Au to VO2 due to the lower work function of the metal is believed to be the mechanism. The result may support the Mott-Hubbard phase transition model for VO2.