70 resultados para magnesium-based alloys
Resumo:
Zr48.5Cu46.5Al5 bulk metallic glass (BMG) composites with diameters of 3 and,4 mm were prepared through suction casting in an arc melting furnace by modulating the alloy composition around the monothetic BMG composition of the high glass forming ability. Microstructural characterization reveals that the composites contain micron-sized CuZr phase with martensite structure, as well as nano-sized Zr2Cu crystalline particles and Cu10Zr7 plate-like phase embedded in an amorphous matrix. Room temperature compression tests showed that the composites exhibited significant strain hardening and obvious plastic strain of 7.7% for 3 nun and 6.4% for 4 nun diameter samples, respectively.
Resumo:
Experimental trials of autogenous deep penetration welding between dissimilar cast Ni-based superalloy K418 and alloy steel 42CrMo flat plates with 5.0 mm thickness were conducted using a 3 kW continuous wave (CW) Nd:YAG laser. The influences of laser output power, welding velocity and defocusing distance on the morphology, welding depth and width as well as quality of the welded seam were investigated. Results show that full keyhole welding is not formed on both K4.18 and 42CrMo side, simultaneously, due to the relatively low output power. Partial fusion is observed on the welded seam near 42CrMo side because of the large disparity of thermal-physical and high-temperature mechanical properties of these two materials. Tile rnicrohardness of the laser-welded joint was also examined and analyzed. It is suggested that applying negative defocusing in the range of Raylei length can increase the welding depth and improve tile coupling efficiency of the laser materials interaction. (c) 2007 Elsevier Ltd. All rights reserved.
Resumo:
The microstructure of Nd_{60}Al_{10}Ni_{10}Cu_{20-x}Fex (x = 0, 5, 7, 10, 15, 20) alloys can change from homogeneous phase to a composite structure consisting of amorphous phase plus clusters or nanocrystals by adjusting the Fe content. The effect of microstructure on the plastic deformation behavior in this alloy system is studied by using nanoindentation. The alloys with homogeneous amorphous structure exhibit pronounced flow serrations during the loading process of nanoindentation. The addition of Fe changes the plastic deformation behavior remarkablely. No flow serration is observed in the alloys with high Fe content for the indentation depth of 500 nm. The mechanism for the change of plastic serrated flow behavior is discussed.
Resumo:
Zr-based bulk metallic glass matrix composites with the composition of Zr56.2Ti13.8Nb5.0Cu6.9Ni5.6Be12.(5) were synthesized by the copper-mould suction casting and the Bridgman solidification. The composite, containing a well-developed flowery beta-Zr dendritic phase, was obtained by the Bridgman solidification with the withdrawal velocity of 0.8 mm/s and the temperature gradient of 45 K/mm, and the ultimate strength of 2050 MPa and fracture plastic strain of 14.6% of the composite were achieved, which was mainly interpreted by the homogeneous dispersion of bcc beta-Zr phase in the glass matrix. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.
Resumo:
We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c Gamma 1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.
Resumo:
MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of MgO/AlN heterostructures. A value of Delta E-v=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.
Resumo:
Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) were investigated by numerical simulation based on a two-dimensional waveguide model. The simulation results indicate that an increased ridge height of the waveguide structure can enhance the lateral optical confinement and reduce the threshold current. For 405 nm violet LDs, the effects of p-AlGaN cladding layer composition and thickness on confinement factor and absorption loss were analyzed. The experimental results are in good agreement with the simulation analysis. Compared to violet LD, the confinement factors of 450 nm blue LD and 530 nm green LD were much lower. Using InGaN as waveguide layers that has higher refractive index than GaN will effectively enhance the optical confinement for blue and green LDs. The LDs based on nonpolar substrate allow for thick well layers and will increase the confinement factor several times. Furthermore, the confinement factor is less sensitive to alloys composition of waveguide and cladding layers, being an advantage especially important for ultraviolet and green LDs.
Resumo:
Based on the results of the temperature-dependent photoluminescence (PL) measurements, the broad PL emission in the phase-separated GaNP alloys with P compositions of 0.03, 0.07, and 0.15 has investigated. The broad PL peaks at 2.18, 2.12 and 1.83 eV are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. With the increasing P composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80-160meV) of the PL peak energy and the trend of the red shift is strengthened. No PL emission peak is observed from the GaN-rich GaNP region, suggesting that the photogenerated carriers in the GaN-rich GaNP region may recombine with each other via non-radiation transitions.
Resumo:
Radiant heat conversion performance dominated by the active layer of Ga0.84In0.16As0.14Sb0.86 diode has been systematically investigated based on an analytic absorption spectrum, which is suggested here by numerically fitting the limited experimental data. For the concerned diode configuration, our calculation demonstrates that the optimal base doping is 3-4 x 10(17) cm(-3), which is less sensitive to the variation of the external radiation spectrum. Given the scarcity of the alloy elements, an economical device configuration of the 0.2-0.6 mu m emitter and the 4-6 mu m base would be particularly acceptable because the corresponding conversion efficiency cannot exhibit discouraging degradation in comparison to the one for the optimal structure, the thickness of which may be up to 10 mu m. More importantly, the method we suggested here to calculate alloy absorption can be easily transferred to other composition, thus bringing great convenience for design or optimization of the optoelectronic device formed by these alloys.
Resumo:
The electronic properties of wide-energy gap zinc-blende structure GaN, A1N, and their alloys Ga(1-x)A1(x)N are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained for GaN and AIN, respectively. The energies of Gamma, X, L conduction valleys of Ga(1-x)A1(x)N alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (C) 1995 American Institute of Physics.
Resumo:
We describe a first-principles-based strategy to predict the macroscopic toughness of a gamma-Ni(Al)/alpha-Al2O3 interface. Density functional theory calculations are used to ascertain energy changes upon displacing the two materials adjacent to the interface, with relaxation conducted over all atoms located within adjoining rows. Traction/displacernent curves are obtained from derivatives of the energy. Calculations are performed in mode I (opening), mode II (shear) and at a phase angle of 45 degrees. The shear calculations are conducted for displacements along < 110 > and < 112 > of the Ni lattice. A generalized interface potential function is used to characterize the results. Initial fitting to both the shear and normal stress results is required to calibrate the unknowns. Thereafter, consistency is established by using the potential to predict other traction quantities. The potential is incorporated as a traction/displacement function within a cohesive zone model and used to predict the steady-state toughness of the interface. For this purpose, the plasticity of the Ni alloy must be known, including the plasticity length scale. Measurements obtained for a gamma-Ni superalloy are used and the toughness predicted over the full range of mode mixity. Additional results for a range of alloys are used to demonstrate the influences of yield strength and length scale.
Resumo:
We describe a first-principles-based strategy to predict the macroscopic toughness of a gamma-Ni(Al)/alpha-Al2O3 interface. Density functional theory calculations are used to ascertain energy changes upon displacing the two materials adjacent to the interface, with relaxation conducted over all atoms located within adjoining rows. Traction/displacernent curves are obtained from derivatives of the energy. Calculations are performed in mode I (opening), mode II (shear) and at a phase angle of 45 degrees. The shear calculations are conducted for displacements along < 110 > and < 112 > of the Ni lattice. A generalized interface potential function is used to characterize the results. Initial fitting to both the shear and normal stress results is required to calibrate the unknowns. Thereafter, consistency is established by using the potential to predict other traction quantities. The potential is incorporated as a traction/displacement function within a cohesive zone model and used to predict the steady-state toughness of the interface. For this purpose, the plasticity of the Ni alloy must be known, including the plasticity length scale. Measurements obtained for a gamma-Ni superalloy are used and the toughness predicted over the full range of mode mixity. Additional results for a range of alloys are used to demonstrate the influences of yield strength and length scale.
Resumo:
The Mg-3Al-3RE alloys (RE, the cerium-rich or the yttrium-rich misch metal) were smelted in a resistance furnace under the protective flux from the Mg-RE master alloys and pure magnesium ingots. The microstructure and mechanical properties of samples prepared by steel mould casting method were investigated.
Resumo:
Ti-based icosahedral quasicrystalline phase (I-phase) exhibited excellent hydrogen storage property for special structure. Unfortunately, the application as the negative electrode material of the nickel-metal hydride batteries was limited due to the poor electrochemical kinetics. Meanwhile, rare-earth element was beneficial to the electrochemical properties of Ti, Zr-based alloy.
Resumo:
The structure and electrochemical characteristics of melted composite Ti0.10Zr0.15V0.35Cr0.10Ni0.30+x% LaNi5 (x=0, 1, 5 and 10) hydrogen storage alloys have been investigated systematically. XRD shows that the matrix phase structure of V-based solid solution phase with a BCC structure and C14 Laves phase with hexagonal structure is not changed after adding LaNi5 alloy. However, the amount of the secondary phase increases with increasing LaNi5 content. Field emission scanning electron microscopy-energy dispersive spectroscopy (FESEM-EDS) shows that the C14 Laves phase contains more Zr and the white lard phase has a composition close to (Zr, Ti)(V, Cr, Ni, La)(2).