Single dipole mode photonic crystal laser on InGaAsP/InP QW waveguide slab - art. no. 698436

Single point defect microcavity possesses only the degenerate dipole modes under certain photonic crystal structure parameters. By deforming lattice structure, the degeneracy of the dipole modes has been broken. Theoretical simulation shows the large splitting of 65nm between the splitted x-mode and y-mode, approximate to the luminescent gain spectrum, which benefits for the single mode lasing. Experimentally the single dipole mode lasing, y-mode, is achieved in the deformed microcavity.

Investigation of vertical radiation loss for whispering-gallery modes in 3-D microresonators by FDTD simulation

The vertical radiation loss of three-dimensional (3-D) microresonators is investigated by 3-D finite-difference time-domain (FDTD) simulation. The simulation shows that the vertical radiation causes an important loss in the microresonators with weak waveguiding, and result in decrease of the quality factors (Q-factors) of whispering-gallery (WG) modes. Through the simulation, we find that TM-like modes have much weaker vertical radiation loss than TE-like modes. High Q-factor TM-like modes are observed in the 3-D microresonators with weak vertical waveguiding, but the Q-factors of TE-like modes decrease greatly.

Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb

The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.

High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide

The 808nm laser diodes with a broad waveguide are designed and fabricated. The thickness of the Al_(0.35)-Ga_(0.65)As waveguide is increased to 0.9μm. In order to suppress the super modes, the thickness of the Al_(0.55)Ga_(0.45)As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm~(-1). The structures are grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

A semiconductor laser suitably fabricated by planar technology

The semiconductor microlasers with an equilateral triangle resonator which can be fabricated by dry etching technique from the laser wafer of the edge emitting laser, are analyzed by FDTD technique and rate equations. The results show that ETR microlaser is suitable to realize single mode operation. By connecting an output waveguide to one of the vertices of the ETR, we still can get the confined modes with high quality factors. The EM microlasers are potential light sources for photonic integrated circuits.

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

Polarization Self-Modulation Phenomenon in a Free Oscillated Nd: YAG Laser

Polarization self-modulation effect in a free oscillated Nd:YAG laser is investigated after a quarter wave plate is introduced independently in the two positions of the cavity. As described in the previous experiments, the intensity components in the orthogonal directions are modulated with a period of the round-trip time or twice. Different pulse shapes reveal that the seed field from the spontaneous emission is not uniform and seems to be stochastic for each pulse.

Surface amorphous and crystalline microstructure by alloying zirconium using Nd : YAG pulsed laser

A novel composite coating was synthesized by laser alloying of zirconium nanoparticles on an austenite stainless steel surface using a pulsed Nd:YAG laser. The coating contained duplex microstructures comprising an amorphous phase and an austenitic matrix. A discontinuous zirconium-containing region formed at a depth of 16 mum below the surface. The amorphous phase was present in the zirconium-rich region, with the composition of zirconium ranging from 7.8 to 14.5 at. pet. The formation of the amorphous phase was attributed to the zirconium addition. The hardness, corrosion, and wear-corrosion resistance of the irradiated coating were evidently enhanced compared to those of the stainless steel.

Application of enthalpy method for moving boundary problem in laser surface melting

A numerical analysis was carried out to study the moving boundary problem in the physical process of pulsed Nd-YAG laser surface melting prior to vaporization. The enthalpy method was applied to solve this two-phase axisymmetrical melting problem Computational results of temperature fields were obtained, which provide useful information to practical laser treatment processing. The validity of enthalpy method in solving such problems is presented.

Microstructure and wear resistance of in situ TiCp composite coating by laser cladding

A new in situ method was realized by one step laser cladding to produce Ni-base alloy composite coating reinforced by in situ reacted and gradiently distributed TiCp particles. The submicron TiCp particles were formed and uniformly distributed because of the in situ reaction and trapping effect under the rapid solidification condition. And, TiCp particles were of gradient distribution on a macro scale and their volume fraction increased from 1.86% at the layer/substrate interface to a maximum 38.4% at the surface of the layer. Furthermore, the in situ generated TiCp/gamma-Ni interfaces were free from deleterious surface reactions. Additionally, the clad coating also revealed a high microhardness of gradient variation with the layer depth and the superior abrasive wear resistance.

Intensity Distribution Design for Laser-Induced Thermal Loading Based on Numerical Simulation

To accomplish laser-induced thermal loading simulation tests for pistons,the Gaussian beam was modulated into multi-circular beam with specific intensity distribution.A reverse method was proposed to design the intensity distribution for the laser-induced thermal loading based on finite element(FE) analysis.Firstly,the FE model is improved by alternating parameters of boundary conditions and thermal-physical properties of piston material in a reasonable range,therefore it can simulate the experimental resul...

Effects of La2O3 on Microstructure and Wear Properties of Laser Clad gamma/Cr7C3/TiC Composite Coatings on TiAl Intermatallic Alloy

The effects of La2O3 addition on the microstructure and wear properties of laser clad gamma/C(r)7C(3)/TiC composite coatings on gamma-TiAl intermetallic alloy substrates with NiCr-Cr3C2 precursor mixed powders have been investigated by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy-dispersive spectrometer (EDS) and block-on-ring wear tests. The responding wear mechanisms are discussed in detail. The results are compared with that for composite coating without La2O3. The comparison indicates that no evident new crystallographic phases are formed except a rapidly solidified microstructure consisting of the primary hard Cr7C3 and TiC carbides and the gamma/Cr7C3 eutectics distributed in the tough gamma nickel solid solution matrix. Good finishing coatings can be achieved under a proper amount of La2O3-addition and a suitable laser processing parameters. The additions of rare-earth oxide La,03 can refine and purify the microstructure of coatings, relatively decrease the volume fraction of primary blocky Cr7C3 to Cr7C3/gamma eutectics, reduce the dilution of clad material from base alloy and increase the microhardness of the coatings. When the addition of La2O3 is approximately 4 wt.%, the laser clad composite coating possesses the highest hardness and toughness. The composite coating with 4 wt.%La2O3 addition can result the best enhancement of wear resistance of about 30%. However, too less or excessive addition amount of La2O3 have no better influence on wear resistance of the composite coating.