Simultaneous phase-shifting ellipsometry based on grating beamsplitter

Simultaneous phase-shifting ellipsometry based on a grating beamsplitter is presented. In the corresponding setup, an orthogonal grating and analyzer array are used. The latter is composed of four separate analyzers arranged in a 2x2 grid, the polarization axes of which are set to 0, 45, 90, and 135 deg. A mask allows only four diffracted beams of the fist order, having the same optical intensities, to pass. Each beam is incident on one of the analyzers of the array. The intensities of the four beams are simultaneously detected by a quadrant detector. The ellipsometric parameters are obtained using the four intensity signals. The feasibility of simultaneous phase shifting ellipsometry is thus demonstrated. (C) 2008 Society of Photo-Optical Instrumentation Engineers.

Inverse symmetric Dammann gratings

Inverse symmetric Dammann grating is a special grating, whose transition points are reflection symmetric about the midpoint with inverse phase offset in one period. It can produce even-numbered or odd-numbered array illumination when the phase modulations are pi or a specific value. Numerical solutions optimized by the steepest-descent algorithm for binary phase and multilevel phases with splitting ratio from I x 4 to 1 x 14 are given. Fabrication of 1 x 6 array without the zero-order intensity and 1 x 7 array with the zero-order intensity are made from the same amplitude mask. A 6 x 6 output without the crossed zero-orders was achieved by crossing two one-dimensional 1 x 6 inverse symmetric Dammann gratings. This grating may have potential value for practical applications. (C) 2008 Elsevier B.V. All rights reserved.

Even aberration measurement of lithographic projection system based on optimized phase-shifting marks

In the present paper, we propose a novel method for measuring the even aberrations of lithographic projection optics by use of optimized phase-shifting marks on the test mask. The line/space ratio of the phase-shifting marks is optimized to obtain the maximum sensitivities of Zernike coefficients corresponding to even aberrations. Spherical aberration and astigmatism can be calculated from the focus shifts of phase-shifting gratings oriented at 0 degrees, 45 degrees, 90 degrees and 135 degrees at multiple illumination settings. The PROLITH simulation results show that, the measurement accuracy of spherical aberration and astigmatism obviously increase, after the optimization of the measurement mark. (C) 2008 Elsevier B.V. All rights reserved.

一种利用相位掩模版对光栅波长进行微调的光栅刻写方法

提出并实验证实了一种刻写光栅时既能保护相位版又能对光栅的反射波长进行微调的方法．通过调整光纤和相位版之间的距离，利用1550nm单模光纤和掺铒分别实现了0．48nm和2．2nm的光栅反射波长的调节．在相位版和光纤之间的距离保持在3mm的条件下，既可以保护相位版又可以获得高质量的光栅．

散射中心型超分辨近场结构的非线性光学特性研究进展

超分辨近场结构(Super-RENS)技术是近年来发展起来的一种新型近场光存储技术，是目前最有实用化前景的纳米尺度近场超分辨技术之一。初步研究表明，其近场超分辨特性与非线性响应密切相关，研究其非线性光学特性对阐明物理机制、发展新的掩模材料和非线性光学应用都具有重要意义。对散射中心型超分辨近场结构非线性光学特性的最新研究进展进行了介绍和分析。

Optical recording properties of metal-azo dye as recording medium with super-resolution near-field structure

A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure (Super-RENS) of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270 degrees C and the mass loss is about 48% in a narrow temperature region (15 degrees C). The complex refractive index N (N = n + ik) is measured. High refractive index (n = 2.45) and low extinction coefficient (k = 0.2) at the recording wavelength 650nm are attained. Static optical recording tests with and without Super-RENS are carried out using a 650nm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.

Numerical analysis and comparison of three metal-oxide-type super-resolution near field structures

Based on the Fresnel-Kirchkoff diffraction theory, we build up a Gaussian diffraction model of metal-oxide-type super-resolution near field structure (super-RENS), which can describe far field optical properties. The spectral contrast induced by refractive index and the structural changes in AgOx, PtOx and PdOx thin films, which are the key functional layers in super-RENS, are studied by using this model. Comparison results indicate that the spectral contrast intensively on laser-induced distribution and change of the refractive index in the metal-oxide films. The readout mechanism of the metal-oxide-type super-RENS optical disc is further clarified. This Gaussian diffraction model can be used as a simple and effective method for choosing proper active materials in super-RENS.

超分辨近场结构中二元共晶合金掩膜的工作机制

超分辨近场结构(super-RENS)技术通过在传统光盘结构中插入掩膜结构而实现近场超分辨,是目前最具实用化前景的超高密度光存储技术之一,其中掩膜层的近场光学特性是决定其光存储性能的关键。利用三维时域有限差分法(3D-FDTD)对合金掩膜的近场光强分布进行了数值仿真和分析,提出二元共晶合金薄膜在激光作用下形成的规则微结构可能是以其作为掩膜层的超分辨近场结构光盘产生较高信噪比(SNR)的原因。

超分辨近场结构中Bubble微结构的远场光学特性分析

以菲涅尔-基尔霍夫衍射理论为基础,建立了超分辨近场结构中Bubble微结构对高斯光束的衍射模型.分析了PtOx型超分辨近场结构（PtOx-Type-Super-RENS）中Bubble微结构的远场光学特性.结果表明,设计的Bubble微结构形成过程的简化模型可基本反映超分辨近场结构中掩膜结构在激光作用下的结构变化过程,说明了高斯衍射模型是研究薄膜微结构变化的一种有效方法.

Structure and properties of amorphous thin film for optical data storage

In this paper the magnetic and magneto-optical properties of amorphous rare earth-transition metal (RE-TM) alloys as well as the magnetic coupling in the multi-layer thin films for high density optical data storage are presented. Using magnetic effect in scanning tunneling microscopy the clusters structure of amorphous RE-TM thin films has been observed and the perpendicular magnetic anisotropy in amorphous RE-TM thin films has been interpreted. Experimental results of quick phase transformation under short pulse laser irradiation of amorphous semiconductor and metallic alloy thin films for phase change optical recording are reported. A step-by-step phase transformation process through metastable states has been observed. The waveform of crystallization propagation in micro-size spot during laser recording in amorphous semiconductor thin films is characterized and quick recording and erasing mechanism for optical data storage with high performance are discussed. The nonlinear optical effects in amorphous alloy thin films have been studied. By photo-thermal effect or third order optical nonlinearity, the optical self-focusing is observed in amorphous mask thin films. The application of amorphous thin films with super-resolution near field structure for high-density optical data storage is performed. (c) 2007 Elsevier B.V. All rights reserved.

Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass. The He+ ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar+ ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er3+/Yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.

Direct writing computer-generated holograms on metal film by an infrared femtosecond laser

Writing computer-generated holograms has been achieved by using near infrared femtosecond laser selective ablation of metal film deposited on glass substrate. The diffraction features with data reconstruction of fabricated computer-generated holograms were evaluated. Both transmission and reflection holograms can be fabricated in a single process. The process required no mask, no pre- or post-treatment of the substrate. (C) 2005 Optical Society of America.

平面行星夹具均匀性修正挡板设计方法研究

众多光学系统对其关键环节大尺寸多层光学薄膜提出了越来越复杂的光谱要求，相应地对各个单层膜的厚度容差要求越来越严格。在整个基底表面，每一层都需要沉积得相当均匀。因为，任何单层的非均匀性将增加最终的膜厚误差。随着平面行星夹具广泛地应用于大尺寸光学薄膜制备，必须实现对行星夹具的均匀性有效控制。本文建立了平面行星夹具薄膜沉积无量纲模型，通过对夹具上各点的运动轨迹分析，提出了停留概率修正法，获得的理论均匀性与实验结果吻合。用此法设计出单片修正挡板将夹具Ф560mm范围内的不均匀性从4％改进到6‰。

渐变反射率镜的设计与制备

按照高斯型渐变反射率镜(GRM)的参数要求,采用了中间层厚度渐变的方案对膜系和掩模板形状进行设计.根据薄膜的实际需求和具体的沉积设备,设计了掩模和掩模切换装置.在一次高真空环境下镀制了渐变反射率镜的所有膜系.采用直接测量的方法,测量了高斯型渐变反射率镜反射率的径向分布.测试结果表明,用这种技术制备的样品,与设计要求基本一致.分析得出,掩模板形状与精度对镀制结果有影响.随着设计尺寸减小,掩模板对膜料分子的散射作用增强,使样品中心反射率小于设计要求,边缘出现旁瓣.提出了减小基片与掩模板之间的距离和提高膜厚监控的精度的改善方案.

Techniques for fabrication of large-size graded reflectivity mirrors

According to the parameter requirements of a graded reflectivity mirror with a Gaussian profile, the layer structure and the mask pattern are designed using a graded-thickness middle layer. The mask and the automatic mask-switchover equipment are designed considering the actual requirement of the thin films and the specific deposit facility. The uniformity of the layer thickness is analyzed. The measurement results indicate that samples prepared with this technique are basically in accordance with the design parameter. The scattering effect between the material molecules and the mask, thickness errors, and the alignment error between the mask and the substrate are the main factors that influence the deposit result. (c) 2008 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3027595]