Even aberration measurement of lithographic projection system based on optimized phase-shifting marks


Autoria(s): Yuan Qiongyan; 王向朝; Qiu Zicheng; Wang Fan; 马明英
Data(s)

2009

Resumo

In the present paper, we propose a novel method for measuring the even aberrations of lithographic projection optics by use of optimized phase-shifting marks on the test mask. The line/space ratio of the phase-shifting marks is optimized to obtain the maximum sensitivities of Zernike coefficients corresponding to even aberrations. Spherical aberration and astigmatism can be calculated from the focus shifts of phase-shifting gratings oriented at 0 degrees, 45 degrees, 90 degrees and 135 degrees at multiple illumination settings. The PROLITH simulation results show that, the measurement accuracy of spherical aberration and astigmatism obviously increase, after the optimization of the measurement mark. (C) 2008 Elsevier B.V. All rights reserved.

Key Basic Research Program of Science and Technology Commission of Shanghai Municipality [07JC14056]; National Natural Science Foundation of China [60578051]; NERCLE (National Engineering Research Center for Lithographic Equipment, China)

Identificador

http://ir.siom.ac.cn/handle/181231/2372

http://www.irgrid.ac.cn/handle/1471x/10711

Idioma(s)

英语

Fonte

Yuan Qiongyan;王向朝;Qiu Zicheng;Wang Fan;马明英.,Microelectron. Eng.,2009,86(1):78-82

Palavras-Chave #Lithography #Projection optics #Spherical aberration #Astigmatism #Zernike coefficients
Tipo

期刊论文