Medaka vasa is required for migration but not survival of primordial germ cells

Vasa is essential for germline development. However, the precise processes in which vasa involves vary considerably in diverse animal phyla. Here we show that vasa is required for primordial germ cell (PGC) migration in the medakafish. vasa knockdown by two morpholinos led to the PGC migration defect that was rescued by coinjection of Vasa RNA. Interestingly, Vasa knockdown did not alter the PGC number, identity, proliferation and motility even at ectopic locations. We established a cell culture system for tracing PGCs at the single cell level in vitro. In this culture system, control and morpholino-injected gastrulae produced the same PGC number and the same time course of PGC survival. importantly, vasa-depleted PGCs in culture had similar motility and locomotion to normal PGCs. Expression patterns of wt1a, sdf1b and cxcT4b in migratory tissues remained unchanged by Vasa knockdown. By chimera formation we show that PGCs from vasa-depleted blastulae failed to migrate properly in the normal environment, whereas control PGCs migrated normally in vasa-disrupted embryos. Furthermore, ectopic PGCs in vasa-depleted embryos also retained all the PGC properties examined. Taken together, medaka vasa is cell-autonomously required for PGC migration, but dispensable to PGC proliferation, motility, identity and survival. (C) 2009 Elsevier Ireland Ltd. All rights reserved.

Zebrafish eaf1 and eaf2/u19 Mediate Effective Convergence and Extension Movements through the Maintenance of wnt11 and wnt5 Expression

Studies have attributed several functions to the Eaf family, including tumor suppression and eye development. Given the potential association between cancer and development, we set forth to explore Eaf1 and Eaf2/U19 activity in vertebrate embryogenesis, using zebrafish. In situ hybridization revealed similar eaf1 and eaf2/u19 expression patterns. Morpholino-mediated knockdown of either eaf1 or eaf2/u19 expression produced similar morphological changes that could be reversed by ectopic expression of target or reciprocal-target mRNA. However, combination of Eaf1 and Eaf2/U19 (Eafs)-morpholinos increased the severity of defects, suggesting that Eaf1 and Eaf2/U19 only share some functional redundancy. The Eafs knockdown phenotype resembled that of embryos with defects in convergence and extension movements. Indeed, knockdown caused expression pattern changes for convergence and extension movement markers, whereas cell tracing experiments using kaeda mRNA showed a correlation between Eafs knockdown and cell migration defects. Cardiac and pancreatic differentiation markers revealed that Eafs knockdown also disrupted midline convergence of heart and pancreatic organ precursors. Noncanonical Wnt signaling plays a key role in both convergence and extension movements and midline convergence of organ precursors. We found that Eaf1 and Eaf2/U19 maintained expression levels of wnt11 and wnt5. Moreover, wnt11 or wnt5 mRNA partially rescued the convergence and extension movement defects occurring in eafs morphants. Wnt11 and Wnt5 converge on rhoA, so not surprisingly, rhoA mRNA more effectively rescued defects than either wnt11 or wnt5 mRNA alone. However, the ectopic expression of wnt11 and wnt5 did not affect eaf1 and eaf2/u19 expression. These data indicate that eaf1 and eaf2/u19 act upstream of noncanonical Wnt signaling to mediate convergence and extension movements.

First-principles study of UC2 and U2C3

The electronic structure and mechanical properties Of UC2 and U2C3 have been systematically investigated using first-principles calculations by the projector-augmented-wave (PAW) method. Furthermore, in order to describe precisely the strong on-site Coulomb repulsion among the localized U 5f electrons, we adopt the generalized gradient approximation +U formalisms for the exchange-correlation term. We show that our calculated structural parameters and electronic properties for UC2 and U2C3 are in good agreement with the experimental data by choosing an appropriate Hubbard U = 3 eV. As for the chemical bonding nature, the contour plot of charge density and total density of states suggest that UC2 and U2C3 are metallic mainly contributed by the 5f electrons, mixed with significant covalent component resulted from the strong C-C bonds. The present results also illustrate that the metal-carbon (U-C) bonding and the carbon-carbon covalent bonding in U2C3 are somewhat weaker than those in UC2, leading to the weaker thermodynamic stability at high temperature as observed by experiments.

Influence of fused interface on the optical and thermal characteristics of vertical cavity lasers

From the effective absorption coefficient of bonded interface and the relationship of interface to reflectivity at cavity mode for double bonded vertical cavity laser, it can be seen that bonded interfaces should be positioned at the null of standing wave distribution, and the thickness of interface should be less than 20 nm. Using the finite elements method, the temperature contour map of laser can be calculated. Results showed that the influence of thin interface to thermal characteristics of VCSELS is slight, while thick interface will lead to temperature increase of active region. SEM images demonstrate that hydrophobic bonding is suitable for the fabrication of the device, while hydrophilic bonding interface is unfavorable to optical and thermal properties of devices with interface thickness larger than 40 nm.

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108

The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was analyzed by the means of ray tracing. The results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-LEDs. Furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. The high-power flip-chip micro-LEDs were fabricated, which has higher quantum efficiency than conventional BALED's. When the number of microstructure in micro-LEDs was increased by 57%, the light output power was enhanced 24%. Light output power is 82.88mW at the current of 350mA and saturation current is up to 800mA, all of these are better than BALED which was fabricated in the same epitaxial wafer. The IN characteristics of micro-LEDs are almost identical to BALED.

The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M

We investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. But the output power increasing is inconspicuous when the thickness is more than 200um. The structure on bottom face of sapphire substrates can enhance the extraction efficiency of GaN-based LED, too. The difference of output power between the flip-chip LED with smooth bottom surface and the LED with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. But for those LEDs grown on patterned sapphire substrate the difference is only about 10%. Another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched LEDs is improved about 50% than a common. case.

Analysis of the lateral displacement and optical path difference in wide-field-of-view polarization interference imaging spectrometer

The mechanism of beam splitting and principle of wide-field-of-view compensation of modified Savart polariscope in the wide-field-of-view polarization interference imaging spectrometer (WPIIS) are analyzed and discussed. Formulas for the lateral displacement and optical path difference (OPD) produced by the modified Savart polariscope are derived by ray-tracing method. The theoretical and practical guidance is thereby provided for the study, design, modulation, experiment and engineering of the polarization interference imaging spectrometers and other birefringent Fourier-transform spectrometers based on Savart polariscopes. (c) 2006 Elsevier B.V. All rights reserved.

~7Be示踪坡耕地次降雨细沟与细沟间侵蚀

对于坡面细沟与细沟间侵蚀过程的了解是建立侵蚀预报模型的基础,但传统方法难以对其进行深入研究。利用7Be示踪技术并结合人工模拟降雨,考虑坡脚沉积作用,研究了25°坡耕地径流小区次降雨过程中细沟与细沟间侵蚀动态。结果表明:根据流出径流小区泥沙7Be含量变化计算坡面明显细沟出现时间,由于坡脚沉积作用使得A、B两试验小区这一时间比实际细沟出现分别延迟了45min和11min;根据坡面-侵蚀泥沙中7Be总量守恒和泥沙质量平衡原理,坡面细沟间侵蚀及细沟侵蚀在坡面总侵蚀、坡脚沉积区泥沙及流出径流小区泥沙中的比例被定量区分开;总体上,细沟间侵蚀量在径流泥沙中的比例逐渐减少,而细沟侵蚀量逐渐增加。两试验小区中7Be示踪计算坡面细沟侵蚀量和坡脚沉积量与实测值相比相对误差均较小,因此7Be示踪技术可以对土壤侵蚀进行较为准确地定量研究。

基于等高线的黄土高原小流域地形虚拟

黄土高原地形三维虚拟是"数字黄土高原"的基础,可为区域水土保持生态建设提供科技支撑。针对直接在地理信息系统软件中观察三维场景存在的控制交互能力不足问题,提出综合利用地理信息系统软件的地形插值算法,基于MFC框架下的OpenGL程序设计的思路,实现地形的真实感三维虚拟。以黄土丘陵沟壑区康家沟小流域为例,等高线数据在AutoCAD和ArcView软件中处理,生成ASCII格式的规则网格DEM数据,依据它们绘制三角形带,采用加权平均法求得各点的法向量,设置光照与材质模式,添加动态天空背景,实现了该流域地形的真实感三维虚拟,并增加交互能力,完成自由漫游与多角度观察。

Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques

In this work we investigate the lateral periodicity of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of X-ray scattering techniques. The multilayers were grown by metalorganic Vapour phase epitaxy on (001)GaAs substrates, which were intentionally off-oriented towards the [011]-direction. The substrate off-orientation and the strain distribution was found to affect the structural properties of the superlattices inducing the generation of laterally ordered macrosteps. Several high-resolution triple-crystal reciprocal space maps, which were recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction and contour maps of the specular reflected beam collected in the vicinity of the (000) reciprocal lattice point, are reported and discussed. The reciprocal space maps clearly show a two-dimensional periodicity of the X-ray peak intensity distribution which can be ascribed to the superlattice periodicity in the direction of the surface normal and to a lateral periodicity in a crystallographic direction coinciding with the miscut orientation. The distribution and correlation of the vertical as well as of the lateral interface roughness was investigated by specular reflectivity and diffuse scattering measurements. Our results show that the morphology of the roughness is influenced by the off-orientation angle and can be described by a 2-dimensional waviness.

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

Analysis of Si/GaAs Bonding Stresses with the Finite Element Method

In conjunction with ANSYS, we use the finite element method to analyze the bonding stresses of Si/GaAs. We also apply a numerical model to investigate a contour map and the distribution of normal stress,shearing stress,and peeling stress,taking into full consideration the thermal expansion coefficient as a function of temperature. Novel bonding structures are proposed for reducing the effect of thermal stress as compared with conventional structures. Calculations show the validity of this new structure.