Zn~(2+)、Co~(2+)和Mn~(2+)对人工湿地基质生物膜的影响

研究了金属离子Zn2+,Co2+和Mn2+对复合垂直流人工湿地基质生物膜脱氢酶活性和多糖含量的影响.结果表明,在生物膜混合液中添加Zn2+能在短时间内(6h)迅速提高生物膜的酶活性,增加多糖含量,浓度为2mg/L的Zn2+可以在较长时间(72h)内保持生物膜的酶活性并且促进多糖的积累.Co2+和Mn2+对生物膜脱氢酶活性及多糖含量的影响较为相似.当Co2+浓度<1mg/L、Mn2+浓度<2mg/L条件下,6h时,对脱氢酶活性呈现了不同程度的促进作用,但随着Co2+和Mn2+离子浓度的增加,对脱氢酶活性的影

湖北江汉平原农田生态系统Mn的循环及平衡分析

欧共体科技合作项目 (STD TS3 CT92 0 0 65 )《中国亚热带人口密集区农业集约化对资源永续利用和食品安全性的影响及解决途径 研究》; 联合国粮农组织 (FAO)援华技术合和食品安全性的影响及解决途径研究》和联合国粮农组织 (FAO)援华技术合作项目 (TCP/CPR/6611)

(Ga,Mn)As 和闪锌矿结构CrSb 的分子束外延生长制备和磁性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

注Mn InAs/GaAs 量子点光电磁性质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体(Ga, Mn)As磁光性质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si 共掺杂和高温退火对(Ga,Mn)As 结构和磁性质的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体(Ga,Mn)As和铁磁金属-半导体异质结Fe/GaAs铁磁相变过程的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体（Ga,Mn)As 的超快磁光谱研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T02:59:47Z No. of bitstreams: 1 博士学位论文 － 朱永刚.pdf: 3575099 bytes, checksum: cb8ced7665a0624ff54bbfafa2be9c35 (MD5)

稀磁半导体(Ga,Mn)As 中自旋动力学的探索与研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-02T05:55:53Z No. of bitstreams: 1 罗晶：稀磁半导体 (Ga,Mn)As中自旋动力学的探索与研究.pdf: 2131823 bytes, checksum: 74e83e69fc6f6b1c7247db0e1c2a8e51 (MD5)

Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.

Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

Influence of Si doping on magnetic properties of (Ga,Mn)As

We have systematically investigated the magnetic properties of Si-doped (Ga,Mn)As films. When the Si content is low, both Curie temperature (T-C) and carrier density (p) decrease compared with undoped (Ga,Mn)As, whereas a monotonic increase of T-C and p is observed with further increase in the doping content of Si. We discuss the possible mechanism for the changes obtained by different Si doping contents and attribute the results to a competition between the existence of Si-Ga (Si substitutes for Ga site) that acts as a donor and Si-I (Si interstitials) which is in favor of the improvement of ferromagnetism. (C) 2008 Elsevier B.V. All rights reserved.

Electronic structure and optical properties of GaN with Mn-doping

Calculations of the electronic structure and the density of states of GaN with Mn are carried out by means of first-principles plane-wave pesudopotential method based on density functional theory. The results reveal a 100% spin polarized impurity band in band structure of Ga1-xMnxN due to hybridization of Mn 3d and N 2p orbitals. The material is half metallic and suited for spin injectors. In addition, a peak of refractive index can be observed near the energy gap. The absorption coefficient increases in the UV region with the increase of the Mn content.