Influence of laser-glazing on hot corrosion resistance of yttria-stabilized zirconia TBC in molten salt mixture of V2O5 and Na2SO4

Plasma-sprayed 8YSZ (zirconia stabilized with 8 wt% yttria)/NiCoCrAlYTa thermal barrier coatings (TBCs) were laser-glazed using a continuous-wave CO2 laser. Open pores within the coating surface were eliminated and an external densified layer was generated by laser-glazing. The hot corrosion resistances of the plasma-sprayed and laser-glazed coatings were investigated. The two specimens were exposed for the same period of 100 h at 900 degrees C to a salt mixture of vanadium pentoxide (V2O5) and sodium sulfate (Na2SO4). Serious crack and spallation occurred in the as-sprayed coating, while the as-glazed coating exhibited good hot corrosion behavior and consequently achieved a prolonged lifetime. The results showed that the as-sprayed 8YSZ coating achieved remarkably improved hot corrosion resistance by laser-glazing.

Efficient top-emitting organic light-emitting diodes with a V2O5 modified silver anode

We fabricated efficient top-emitting organic light-emitting diodes (OLEDs) with silver (Ag) as an anode and samarium (Sm) as a semi-transparent cathode. The hole-injection barrier at the Ag anode/hole transporter interface is reduced by inserting a buffer layer of vanadium oxide (V2O5) between them. The ultraviolet photoelectron spectroscopy analysis shows that the hole-injection barrier is reduced by 0.5 eV. Both the V2O5 thickness and the organic layer thickness are optimized. The optimized device achieves a maximum current efficiency of 5.46 cd A(-1) and a power efficiency of 3.90 lm W-1, respectively.

一种使用V2O5/炭基载体催化剂制备硫磺的方法

一种使用Ｖ↓［２］Ｏ↓［５］／炭基载体催化剂制备硫磺的方法是将ＳＯ↓［２］与含ＣＯ的气氛混合，使得气氛中ＣＯ与ＳＯ↓［２］的摩尔比为１－６∶１，在空速５００－２００００ｍｌ／ｇ·ｈ，温度为２２０－４５０℃的条件下通过Ｖ↓［２］Ｏ↓［５］担载量为０．１ｗｔ％－５ｗｔ％的Ｖ↓［２］Ｏ↓［５］／炭基载体的催化剂，ＳＯ↓［２］被还原为硫磺。本发明具有在较低的温度下制得硫磺，选择性和产率都较高。避免了二次污染，降低了脱硫的综合成本的优点。

一种吸硫V2O5/AC催化吸附剂的再生方法

一种吸硫Ｖ↓［２］Ｏ↓［５］／ＡＣ催化吸附剂的再生方法是担载量为０．１ｗｔ％－５ｗｔ％的Ｖ↓［２］Ｏ↓［５］／炭基载体的催化吸附剂在吸硫后装入再生反应器中，在ＣＯ含量为０．０５％－１．０％的气氛中，升温至２３０－４２０℃，再生１０－１２０分钟。。本发明具有使得催化吸附剂再生后的脱硫活性、稳定性都能得到良好的恢复，再生工艺简单，可操作性强的优点。

Fabrication and Infrared Optical Properties of Nano Vanadium Dioxide Thin Films

Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (FT-IR) spectroscopy. The results showed that the as-deposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal rutile VO2. After annealing at 400 degrees C for 2 h, the mixed phase vanadium oxide (VOx) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic rutile structure. When increasing the temperature to 450 degrees C, nano VO2 thin films with smaller grains were obtained. FT-IR results showed that the transmission contrast factor of the nano VO2 thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin film with smaller grains is an ideal material for application in optical switching devices.

Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing

VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400 degrees C for 2 hours. The film also shows a polycrystal structure with grain size from 50nm to 150nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition.