Three different viruses observed from the tissues of diseased mandarin fish Siniperca chuatsi

Three different kinds of viruses, the spherical virus SCSV with a diameter of about 280 nm, the rhabdovirus SCRV with a size about 250 x 120 nm, and the baculovirus SCBV with a size about 200 x 100 nm, were observed from the tissues of diseased mandarin fish Siniperca chuatsi with outbreak of infection and acute lethality. This phenomenon implicated that the reason why the epizootic disease of mandarin fish could not be quenched by only one kind of virus vaccine can be explained by the fact that the fish may be infected by different kinds of viruses. Therefore, more attention should be paid to the complexity of virus pathogens in the prevention strategy for mandarin fish diseases.

Effect of burrowing activity of root vole (Microtus oeconomus Pallas) on plant diversity in alpine meadow

Herbivory and burrowing activity of mammals may influence the species composition and diversity of plant communities. The effect of corridors and holes systems constructed by root vole (Microtus oeconomus Pallas) on the plant species diversity was studied in the habitat of high - mountain meadow (3250 in a.s.l in Qinghai-Tibet Plateau, China). By using grid method, these disturbances were studied on 16 plots (100 cm x 100 cm) distributed in 4 transects in studied area, in August 2000 and 2001. The disturbance intensity index, D, was calculated as the percent of the ground surface disturbed by voles in the study area. Plant species were identified and counted on the same plots. In total 46 plant species were identified - 39% of this number was considered as sensitive to the vole disturbances as their occurrence and/or abundance decreased along the disturbance intensity. Generally, a significantly negative correlation (r = - 0.911 P < 0.01) between vole aboveground disturbances and plant species diversity (H') was found. The results suggest that root vole ground disturbances, especially in the form of actively utilized holes and corridors have significantly negative influence on plant species diversity in high-mountain grassland habitat.

Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction

Cubic GaN was grown on GaAs(100) by low pressure metal organic chemical vapor deposition (MOCVD). X-ray diffraction, scanning electron microscope (SEM) and photoluminescence (PL) spectra were performed to characterize the quality of the GaN film. The PL spectra of cubic GaN thin films being thicker than 1.5 mu m were reported. Triple-crystal diffraction to analyze orientation distributions and strain of the thin films was also demonstrated.

PASSIVATION OF THE INP(100) SURFACE USING (NH4)(2)S-X

InP(100) surface treated with (NH4)(2)S-x has been investigated by using photoluminescence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy. It is found that PL intensity increased by a factor of 3.3 after (NH4)(2)S-x passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.

立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长

利用MOCVD生长技术在GaAs(100)衬底上生长了高质量的立方相AlGaN薄膜。通过光致发光（PL）、扫描电镜（SEM）分析了不同NH_3流量、不同生长温度对AlGaN外延层的结晶质量和表面形貌的影响。发现相对高的NH_3流量和相对高的生长温度可以提高AlGaN外延层的结晶质量。

立方相Al_xGa_（1-x）N/GaAs（100）的光致发光研究

于2010-11-23批量导入

立方相GaN/GaAs（100）质量的X射线双晶衍射研究

于2010-11-23批量导入

GexSi（1-x）/Si（100）应变超晶格高分辨电镜研究

国家教委基金

Addition reactions of nitrones on the reconstructed C(100)-2 x 1 surfaces

In this paper, the reactions of nitrone, N-methyl nitrone, N-phenyl nitrone and their hydroxylamine tautomers (vinyl-hydroxylamine, N-methyl-vinyl-hydroxylamine and N-phenyl-vinyl-hydroxylamine) on the reconstructed C(100)-2 x 1 surface have been investigated using hybrid density functional theory (B3LYP), Moller-Plesset second-order perturbation (MP2) and multi-configuration complete-active-space self-consistent-field (CASSCF) methods. The calculations showed that all the nitrones can react with the surface "dimer" via facile 1.3-dipolar cycloaddition with small activation barriers (less than 12.0 kJ/mol at B3LYP/6-31g(d) level). The [2+2] cycloaddition of hydroxylamine tautomers on the C(100) surface follows a diradical mechanism. Hydroxylamine tautomers first form diradical intermediates with the reconstructed C(I 00)-2 x I surface by overcoming a large activation barrier of 50-60 kJ/mol (B3LYP), then generate [2+2] cycloaddition products via diradical transition states with negligible activation barriers. The surface reactions result in hydroxyl or amino-terminated diamond surfaces, which offers new opportunity for further modifications. (C) 2007 Elsevier B.V. All rights reserved.

Addition reaction of nitrones on the reconstructed Si(100)-2 x 1 surface

The reaction of nitrone, N-methyl nitrone, and their hydroxylamine tautomers (vinyl-hydroxylamine and N-methyl vinyl-hydroxylamine) on the reconstructed Si(100)-2 x 1 surface has been investigated by means of hybrid density functional theory (B3LYP) and Moller-Plesset second-order perturbation (MP2) methods. The calculations predicted that both of the nitrones should react with the surface dimer via facile concerted 1,3-dipolar cycloaddition leading to 5-member-ring compounds. The reaction of hydroxylamine tautomers on the Si(100) surface follows pi-complex (intermediate) mechanism. For the reaction of N-methyl vinyl-hydroxylamine, the pi-complex intermediate undergoes [2+2] cycloaddition leading to a 4-member-ring compound. But in the reaction of vinyl-hydroxylamine, the intermediate undergoes H-migration reaction ("ene" reaction) resulting in the oxime-terminated Si surface. All the surface reactions result in the hydroxyl-terminated silicon surfaces, which are very useful for the further modification of the semiconductor.

Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy

The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. The high-resolution x-ray diffraction results reveal that the single crystalline InAsxSb1-x films with a midrange composition are epitaxially grown on the GaSb substrates. Temperature dependence of the Hall mobility was theoretically modeled by considering several predominant scattering mechanisms. The results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (RT). Furthermore, the InAsxSb1-x films with the higher As composition exhibit the better crystalline quality and the higher mobility. The InAs0.35Sb0.65 film exhibits a Hall mobility of 4.62x10(4) cm(2) V-1 s(-1). The cutoff wavelength of photoresponse is extended to about 12 mu m with a maximum responsivity of 0.21 V/W at RT, showing great potential for RT long-wavelength infrared detection. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989116]

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

X射线荧光层析

X射线荧光层析技术是利用内壳层电子跃迁所发出荧光辐射，来测定样品中的元素含量，获取样品内部的结构信息。Wolter型掠入射镜装置的元素灵敏度可以达到100个原子／cm^3，空间分辨率达到微米量级。结合康普顿散射和吸收层析进行成像可使其图像质量得到进一步的提高。而当获得了物体的投影数据以后，可采用各种重建算法来使物体得以准确重现。介绍了几种常用的重建算法，并就其特点进行了比较。