Enhancement of GABAA Receptor-Mediated Inhibitory Postsynaptic Currents Induced by "Partial Oxygen-Glucose Deprivation

下载PDF阅读器"氧糖剥夺"模型作为研究脑缺血的离体模型被广泛使用,该模型模拟了局灶性脑缺血的主要病理变化.然而在缺血病灶核心区与正常脑组织之间称为缺血半暗带的区域,脑血流也有程度不一的降低.为了模拟这种病理变化,发展了一种"不完全氧糖剥夺"的离体脑片模型,该模型满足两个条件,灌流液里氧气部分剥夺而葡萄糖含量降低;"氧糖剥夺"可以导致谷氨酸介导的兴奋性毒性,从而引起神经细胞的坏死.而A型γ-氨基丁酸受体(GABAAR)介导的神经元抑制性活动可以对抗谷氨酸引起的兴奋性毒性,因此近年来引起广泛的研究兴趣.而谷氨酸受体和γ-氨基丁酸受体功能在缺血半暗带是否有改变尚不得而知.因此本文采用海马脑片全细胞膜片钳的记录方法,研究"不完全氧糖剥夺"对海马CA1区神经元的A型γ-氨基丁酸受体介导的抑制性突触后膜电流(IPSCs)的影响.研究发现"不完全氧糖剥夺"使GABAAR介导的IPSCs的峰值增加而衰减时程延长.进一步研究发现该电流的峰值增加是由于GABAAR-氯离子通道的电导增加所致,而与氯离子的反转电位变化无关.这些发现提示在脑缺血的缺血半暗带区域GABAAR介导的神经元抑制性活动可能是增强的,这可能是神经元面对缺血状态产生自我保护的一种内稳态机制.

Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation

InGaN/GAN multiple quantum wells grown by metal-organic chemical vapor deposition were irradiated with the electron beam from a low energy accelerator. The electron irradiation induced a redshift by 50 meV in the photoluminescence spectra of the electron-irradiated InGaN/GaN quantum wells, irrespective of the exposure time to the electron beam which ranges from 10 to 1000s. The localization parameter extracted from the temperature-dependent photoluminescence spectra was found to increase in the Irradiated samples. Analysis of the intensity of the longitudinal optical phonon sidebands showed the enhancement of the exciton-phonon coupling, indicating that the excitons are more strongly localized in the irradiated InGaN wells. The change in the pholotuminescence spectra. In the irradiated InGa/GAN quantum wells were explained in terms of the increase of indium concentration in indium rich clusters induced by the electron irradiation (C) 2009 The Japan Society of Applied Physics

Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors

The origin of ferromagnetism in d(0) semiconductors is studied using first-principles methods with ZnO as a prototype material. We show that the presence of spontaneous magnetization in nitrides and oxides with sufficient holes is an intrinsic property of these first-row d(0) semiconductors and can be attributed to the localized nature of the 2p states of O and N. We find that acceptor doping, especially doping at the anion site, can enhance the ferromagnetism with much smaller threshold hole concentrations. The quantum confinement effect also reduces the critical hole concentration to induce ferromagnetism in ZnO nanowires. The characteristic nonmonotonic spin couplings in these systems are explained in terms of the band coupling model.

Electromagnetic-field-induced cohesive force enhancement in a metallic nanowire

We theoretically study the conducting electronic contribution to the cohesive force in a metallic nanowire irradiated under a transversely polarized external electromagnetic field at low temperatures and in the ballistic regime. In the framework of the free-electron model, we have obtained a time-dependent two-level electronic wavefunction by means of a unitary transformation. Using a thermodynamic statistical approach with this wavefunction, we have calculated the cohesive force in the nanowire. We show that the cohesive force can be divided into two components, one of which is independent of the electromagnetic field (static component), which is consistent with the existing results in the literature. The magnitude of the other component is proportional to the electromagnetic field strength. This extra component of the cohesive force is originally from the coherent coupling between the two lateral energy levels of the wire and the electromagnetic field.

Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing

We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering process may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.

Phonon-induced Raman scattering in GaNAs

The Raman scattering spectra of MBE-grown GaNAs epilayers were investigated. The resonant enhancement of Raman scattering due to the E+ states in the conduction band was observed and the Raman peaks related to the phonons at non-Gamma points of the Brillouin Zone were detected. II was clearly seen that the local vibrational mode induced by nitrogen impurities evolves to the GaN-like lattice phonon mode when the nitrogen content increases. By comparing the Raman spectra measured before and after 850 degreesC rapid thermal annealing, it was tentatively suggested that two weak peaks were induced by the pairing or clustering effect of nitrogen.

RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface by rapid thermal annealing

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface followed by rapid thermal annealing (RTA) has been investigated by using photoluminescence (PL), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), An increase in PL intensity of up to 10 times was observed after sulfur passivation and RTA treatment compared to unpassivated InP surface. XPS measurement results show that introduction of RTA process can enhance the sulfur remaining on the passivated surface to bond to indium but no evidence of S-P bond is noticeable. Passivation enhancement mechanism is discussed.

Light induced rapid thermal diffusion of boron atom in silicon

国家自然科学基金

Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.

The enhancement of TiO2 photocatalytic activity by hydrogen thermal treatment

In this study, conventional TiO2 powder was heated in hydrogen (H-2) gas at a high temperature as pretreatment. The photoactivity of the treated TiO2 samples was evaluated in the photodegradation of sulfosalicylic acid (SSA) in aqueous suspension. The experimental results demonstrated that the photodegradation rates of SSA were significantly enhanced by using the H-2-treated TiO2 catalysts and an optimum temperature for the H-2 treatment was found to be of 500-600 degreesC. The in situ electron paramagnetic resonance (EPR) signal intensity of oxygen vacancies (OV) and trivalent titanium (Ti3+) associated with the photocatalytic activity was studied. The results proved the presence of OV and Ti3+ in the lattice of the H2-treated TiO2 and indicated that both were contributed to the enhancement of photocatalytic activity. Moreover, the experimental results presented that the EPR signal intensity of OV and Ti3+ in the H-2-treated TiO2 samples after 10 months storage was still significant higher than that in the untreated TiO2 catalyst. The experiment also demonstrated that the significant enhancement occurred in the photodegradation of phenol using the H-2-treated TiO2. (C) 2002 Elsevier Science Ltd. All rights reserved.